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Abstract Multilayers of so-called 2D van der Waals materials have gained considerable attention as active components of next-generation electronic and optoelectronic technologies, with semiconducting black phosphorus (BP) regarded as one of the most promising systems. The applicability and performance limits of BP in both stand-alone and heterostructure-based multilayer devices are determined by individual flake charge transport properties, which synergistically depend on the number of layers and the strength of interlayer coupling between those. In this work, we study the DC electrical transport characteristics of high-quality BP field-effect devices within a wide range of flake thicknesses at room temperature. The experimental data show a non-trivial increase in conductivity and hole density with a reduced number of layers while maintaining constant field-effect mobility due to the prevalence of electron–phonon scattering. Based on the solution of the 1D Schrödinger–Poisson equation, we find that the observed phenomena are a direct consequence of non-negligible interlayer coupling, which in turn causes a local redistribution of free charge carriers towards the central layers. Our data show that due to the electrostatic conditions at the flake surfaces, a naturally protected 2D hole gas can be encapsulated in flakes as high as 10 nm, which preserves the bulk-like bandgap and effective carrier masses due to the electrostatic environment.

We studied the electrical transport properties of Au-seeded germanium nanowires with radii ranging from 11 to 80 nm at ambient conditions. We found a non-trivial dependence of the electrical conductivity, mobility and carrier density on the radius size. In particular, two regimes were identified for large (lightly doped) and small (stronger doped) nanowires in which the charge-carrier drift is dominated by electron-phonon and ionized-impurity scattering, respectively. This goes in hand with the finding that the electrostatic properties for radii below ca. 37 nm have quasi one-dimensional character as reflected by the extracted screening lengths.

The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resistivity emerges with a peak feature around 14 nm. For diameters above 20 nm, nanowires were found to be describable by classical means. For smaller diameters a quantum-based approach was required where we employed the 1D Kubo–Greenwood framework and also revealed the dominant charge carriers to be heavy holes. For both regimes the theoretical results and experimental data agree qualitatively well assuming a spatial spreading of the free holes towards the nanowire centre upon diameter reduction.