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Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond.

The nitrogen-vacancy (NV) center in diamond is a heavily studied defect due to its potential applications to quantum metrology and computation, particularly in ambient conditions. The key mechanism to using the NV in any application lies in the ability to read out the spin state of the defect which is typically done optically. The optical contrast is then the key metric for electron spin readout fidelity and one of the key limiting factors in the NV's overall performance. We present a new mechanism for high contrast readout using the spin-to-charge conversion (SCC) mechanism in conjunction with an electrode to improve the spin contrast by altering the NV energy levels relative to the diamond conduction band. Theoretical modelling predicts an optical spin contrast at 42% which would be the highest optical contrast for the NV at room temperature and the technique opens up a range of alternative research pathways for the NV which are discussed., Comment: 6 pages, 5 figures + 4 pages and 3 figures in the appendix

Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a "source" NV undergoes optically-driven cycles of ionization and recombination to produce a stream of photo-generated carriers, one of which we subsequently capture via a "target" NV several micrometers away. We use a spin-to-charge conversion scheme to encode the spin state of the source color center into the charge state of the target, in the process allowing us to set an upper bound to carrier injection from other background defects. We attribute our observations to the action of unscreened Coulomb potentials producing giant carrier capture cross-sections, orders of magnitude greater than those typically attained in ensemble measurements. Besides their fundamental interest, these results open intriguing prospects in the use of free carriers as a quantum bus to mediate effective interactions between paramagnetic defects in a solid-state chip.

Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond. To do so we develop a model of nitrogen overgrowth using density functional theory. Nucleation of new layers occurs through C insertion into a C--C surface dimer. However, we find that C insertion into a C--N dimer has substantially reduced energy requirements. In particular, the rate of the key dimer ring-opening and closing mechanism is increased 400-fold in the presence of nitrogen. Full incorporation of the substitutional nitrogen defect is then facilitated through charge transfer of an electron from the nitrogen lone pair to charge acceptors on the surface. This work provides a compelling mechanism for the role of surface-embedded nitrogen in enhancing (100) diamond growth through the nucleation of new layers. Furthermore, it demonstrates a pathway for substitutional nitrogen formation during chemical vapour deposition which can be extended to study the creation of technologically relevant nitrogen-based defects., main text: 19 pages, 9 figures supplementary: 10 pages, 10 figures

The ability to perform nanoscale electric field imaging of elementary charges at ambient temperatures will have diverse interdisciplinary applications. While the nitrogen-vacancy (NV) center in diamond is capable of high-sensitivity electrometry, demonstrations have so far been limited to macroscopic field features or detection of single charges internal to diamond itself. In this work we greatly extend these capabilities by using a shallow NV center to image the electric field of a charged atomic force microscope tip with nanoscale resolution. This is achieved by measuring Stark shifts in the NV spin-resonance due to AC electric fields. To achieve this feat we employ for the first time, the integration of Qdyne with scanning quantum microscopy. We demonstrate near single charge sensitivity of $\eta_e = 5.3$ charges/$\sqrt{\text{Hz}}$, and sub-charge detection ($0.68e$). This proof-of-concept experiment provides the motivation for further sensing and imaging of electric fields using NV centers in diamond.

The nitrogen-vacancy (NV) center in diamond has a wide range of potential applications in quantum metrology, communications and computation. The key to its use lies in how large the optical spin contrast is and the associated fidelity of spin state readout. In this paper we propose a new mechanism for improving contrast with a spin-to-charge protocol that relies on the use of an external electrode and cryogenic temperatures to discretize the diamond conduction band for spin-selective resonant photoionization. We use effective mass theory to calculate the discrete eigenenergies in this new system and use them to formulate a new spin-to-charge protocol that involves resonant photoionization out the NV ground state into the diamond conduction band. The major sources of broadening are also addressed which guide the design of the experiment. With this mechanism we theorise an optical spin contrast that and an associated spin readout fidelity of 85%. This significant improvement can be applied to a number of cryogenic quantum technologies., Comment: 16 pages, 7 figures

The ST1 center is a point defect in diamond with bright fluorescence and a mechanism for optical spin initialization and readout. The center has impressive potential for applications in diamond quantum computing as a quantum bus to a register of nuclear spins. This is because it has an exceptionally high readout contrast, and unlike the well-known nitrogen-vacancy center, it does not have a ground state electronic spin that decoheres the nuclear spins. However, its chemical structure is unknown, and there are large gaps in our understanding of its properties. We present the discovery of ST1 centers in natural diamond. Our experiments identify interesting power dependence of the center’s optical dynamics and reveal new electronic structure. We also present a theory of its electron-phonon interactions, which we combine with previous experiments, to shortlist likely candidates for its chemical structure.

The nitrogen-vacancy (NV) center in diamond is a widely utilized system due to its useful quantum properties. Almost all research focuses on the negative charge state (NV−) and comparatively little is understood about the neutral charge state (NV0). This is surprising as the charge state often fluctuates between NV0 and NV− during measurements. There are potentially under-utilized technical applications that could take advantage of NV0, either by improving the performance of NV0 or utilizing NV− directly. However, the fine structure of NV0 has not been observed. Here, we rectify this lack of knowledge by performing magnetic circular dichroism measurements that quantitatively determine the fine structure of NV0. The observed behavior is accurately described by spin-Hamiltonians in the ground and excited states with the ground state yielding a spin-orbit coupling of λ = 2.24 ± 0.05 GHz and a orbital g-factor of 0.0186 ± 0.0005. The reasons why this fine structure has not been previously measured are discussed and strain-broadening is concluded to be the likely reason.

The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial mapping of the full stress tensor, with a submicrometer spatial resolution and a sensitivity of the order of 1 MPa (10 MPa) for the shear (axial) stress components. To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including mapping the stress induced by localized implantation damage, nanoindents, and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy.

We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by constructing dynamical matrices of large supercells containing tens of thousands of atoms. The main goal of the paper is to calculate luminescence and absorption lineshapes due to coupling to vibrational degrees of freedom. The coupling to symmetric $a_1$ modes is computed via the Huang-Rhys theory. Importantly, to include a nontrivial contribution of $e$ modes we develop an effective methodology to solve the multi-mode $E \otimes e$ Jahn-Teller problem. Our results show that for NV centers in diamond a proper treatment of $e$ modes is particularly important for absorption. We obtain good agreement with experiment for both luminescence and absorption. Finally, the remaining shortcomings of the theoretical approach are critically reviewed. The presented theoretical approach will benefit identification and future studies of point defects in solids., Comment: 21 pages, 17 figures

We present ab-initio calculations of photoionization thresholds and cross sections of the negatively charged nitrogen-vacancy (NV) center in diamond from the ground $^{3}\!A_2$ and the excited $^{3}\!E$ states. We show that after the ionization from the $^{3}\!E$ level the NV center transitions into the metastable $^{4}\!A_2$ electronic state of the neutral defect. We reveal how spin polarization of $\mathrm{NV}^{-}$ gives rise to spin polarization of the $^{4}\!A_2$ state, providing an explanation of electron spin resonance experiments. We obtain smooth photoionization cross sections by employing dense $k$-point meshes for the Brillouin zone integration together with the band unfolding technique to rectify the distortions of the band structure induced by artificial periodicity of the supercell approach. Our calculations provide a comprehensive picture of photoionization mechanisms of $\mathrm{NV}^{-}$. They will be useful in interpreting and designing experiments on charge-state dynamics at NV centers. In particular, we offer a consistent explanation of recent results of spin-to-charge conversion of NV centers., Comment: 14 pages, 9 figures

Significance: Wide-field measurement of cellular membrane dynamics with high spatiotemporal resolution can facilitate analysis of the computing properties of neuronal circuits. Quantum microscopy using a nitrogen-vacancy (NV) center is a promising technique to achieve this goal. Aim: We propose a proof-of-principle approach to NV-based neuron functional imaging. Approach: This goal is achieved by engineering NV quantum sensors in diamond nanopillar arrays and switching their sensing mode to detect the changes in the electric fields instead of the magnetic fields, which has the potential to greatly improve signal detection. Apart from containing the NV quantum sensors, nanopillars also function as waveguides, delivering the excitation/emission light to improve sensitivity. The nanopillars also improve the amplitude of the neuron electric field sensed by the NV by removing screening charges. When the nanopillar array is used as a cell niche, it acts as a cell scaffolds which makes the pillars function as biomechanical cues that facilitate the growth and formation of neuronal circuits. Based on these growth patterns, numerical modeling of the nanoelectromagnetics between the nanopillar and the neuron was also performed. Results: The growth study showed that nanopillars with a 2-μm pitch and a 200-nm diameter show ideal growth patterns for nanopillar sensing. The modeling showed an electric field amplitude as high as ≈1.02×1010 mV/m at an NV 100 nm from the membrane, a value almost 10 times the minimum field that the NV can detect. Conclusion: This proof-of-concept study demonstrated unprecedented NV sensing potential for the functional imaging of mammalian neuron signals.

Diamond quantum processors consisting of a nitrogen-vacancy (NV) centre and surrounding nuclear spins have been the key to significant advancements in room-temperature quantum computing, quantum sensing and microscopy. The optimisation of these processors is crucial for the development of large-scale diamond quantum computers and the next generation of enhanced quantum sensors and microscopes. Here, we present a full model of multi-qubit diamond quantum processors and develop a semi-analytical method for designing gate pulses. This method optimises gate speed and fidelity in the presence of random control errors and is readily compatible with feedback optimisation routines. We theoretically demonstrate infidelities approaching $\sim 10^{-5}$ for single-qubit gates and established evidence that this can also be achieved for a two-qubit CZ gate. Consequently, our method reduces the effects of control errors below the errors introduced by hyperfine field misalignment and the unavoidable decoherence that is intrinsic to the processors. Having developed this optimal control, we simulated the performance of a diamond quantum processor by computing quantum Fourier transforms. We find that the simulated diamond quantum processor is able to achieve fast operations with low error probability., Comment: Published version. Updated references, additional analysis for the infidelities of CZ gate. Two new appendices on discussing the effects of time-ordering in the quantum evolution and examining the effects of the secular approximation and hyperfine field misalignments on gate fidelities. Adjusted the discussions and claims accordingly

Nuclear spin ensembles in diamond are promising candidates for quantum sensing applications, including rotation sensing. Here we perform a characterization of the optically detected nuclear-spin transitions associated with the 14N nuclear spin within diamond nitrogen vacancy (NV) centers. We observe nuclear-spin-dependent fluorescence with the contrast of optically detected 14N nuclear Rabi oscillations comparable to that of the NV electron spin. Using Ramsey spectroscopy, we investigate the temperature and magnetic-field dependence of the nuclear spin transitions in the 77.5-420 K and 350-675 G range, respectively. The nuclear quadrupole coupling constant Q was found to vary with temperature T yielding d|Q|/dT=-35.0(2) Hz/K at T=297 K. The temperature and magnetic field dependencies reported here are important for quantum sensing applications such as rotation sensing and potentially for applications in quantum information processing., Main text: 6 pages, 4 figures. Supplemental Information: 3 pages, 3 figures

We unravel the mystery of mechanically decoupled defect centers in hexagonal boron nitride., Quantum emitters in hexagonal boron nitride were recently reported to hold unusual narrow homogeneous linewidths of tens of megahertz within the Fourier transform limit at room temperature. This unique observation was traced back to decoupling from in-plane phonon modes. Here, we investigate the origins for the mechanical decoupling. New sample preparation improved spectral diffusion, which allowed us to reveal a gap in the electron-phonon spectral density for low phonon frequencies. This sign for mechanical decoupling persists up to room temperature and explains the observed narrow lines at 300 kelvin. We investigate the dipole emission directionality and reveal preferred photon emission through channels between the layers supporting the claim for out-of-plane distorted defect centers. Our work provides insights into the underlying physics for the persistence of Fourier transform limit lines up to room temperature and gives a guide to the community on how to identify the exotic emitters.

Hybrid quantum systems exhibiting coupled optical, spin, and mechanical degrees of freedom can serve as a platform for sensing, or as a bus to mediate interactions between qubits with disparate energy scales. These systems are also creating opportunities to test foundational ideas in quantum mechanics, including direct observations of the quantum regime in macroscopic objects. Here, we make use of angular momentum conservation to study the dynamics of a pair of paramagnetic centers featuring different spin numbers in the presence of a properly tuned external magnetic field. We examine the interplay between optical excitation, spin evolution, and mechanical motion, and theoretically show that in the presence of continuous optical illumination, interspin cross relaxation must induce rigid rotation of the host crystal. The system dynamics is robust to scattering of spin-polarized phonons, a result we build on to show this form of angular momentum transfer should be observable using state-of-the-art torsional oscillators or trapped nanoparticles. Fil: Zangara, Pablo René. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. City College of New York; Estados Unidos Fil: Wood, Alexander. University of Melbourne; Australia Fil: Doherty, Marcus W.. Australian National University; Australia Fil: Meriles, Carlos A.. City College of New York; Estados Unidos

The nitrogen-vacancy (NV) color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. Whereas individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires the development of an on-chip quantum bus for transporting information between distant qubits. Here, we propose a method for coherent quantum transport of an electron and its spin state between distant NV centers. Transport is achieved by the implementation of spatial stimulated adiabatic Raman passage through the optical control of the NV center charge states and the confined conduction states of a diamond nanostructure. Our models show that, for two NV centers in a diamond nanowire, high-fidelity transport can be achieved over distances of order hundreds of nanometers in timescales of order hundreds of nanoseconds. Spatial adiabatic passage is therefore a promising option for realizing an on-chip spin quantum bus.

Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical and microwave transitions. For such applications, the efficient initialization of the spin state is necessary. We develop a theoretical description of the spin-polarization process by using the intersystem crossing of the silicon vacancy defect, which is enabled by a combination of optical driving, spin-orbit coupling, and interaction with vibrational modes. By using distinct optical drives, we analyze two spin-polarization channels. Interestingly, we find that different spin projections of the ground state manifold can be polarized. This paper helps in understanding initialization and readout of the silicon vacancy and explains some existing experiments with the silicon vacancy center in SiC.

Solid state single photon sources with Fourier Transform (FT) limited lines are among the most crucial constituents of photonic quantum technologies and have been accordingly the focus of intensive research over the last several decades. However, so far, solid state systems have only exhibited FT limited lines at cryogenic temperatures due to strong interactions with the thermal bath of lattice phonons. In this work, we report a solid state source that exhibits FT limited lines measured in photo luminescence excitation (sub 100 MHz linewidths) from 3K-300K. The studied source is a color center in the two-dimensional hexagonal boron nitride and we propose that the center's decoupling from phonons is a fundamental consequence of material's low dimensionality. While the center's luminescence lines exhibit spectral diffusion, we identify the likely source of the dffusion and propose to mitigate it via dynamic spectral tuning. The discovery of FT-limited lines at room temperature, which once the spectral diffusion is controlled, will also yield FT-limited emission. Our work motivates a significant advance towards room temperature photonic quantum technologies and a new research direction in the remarkable fundamental properties of two-dimensional materials., 6 pages, 3 figures

Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, including photovoltaics, batteries, electronics, sensors and light sources for long-distance quantum communication. Here we present a comprehensive study on combined radiation effects in Earth’s atmosphere on various devices based on these nanomaterials. Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to γ-rays, protons and electrons. The devices show negligible change in performance after the irradiation, suggesting robust suitability for space use. Under excessive γ-radiation, however, monolayer WS2 shows decreased defect densities, identified by an increase in photoluminescence, carrier lifetime and a change in doping ratio proportional to the photon flux. The underlying mechanism is traced back to radiation-induced defect healing, wherein dissociated oxygen passivates sulfur vacancies., The potential of 2D materials for space applications has been surfaced recently, however a comprehensive assessment of their suitability is currently missing. Here, the authors investigate the radiation effects in Earth’s atmosphere on various devices based on 2D transition metal dichalcogenides and hexagonal boron nitride.

The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of the NV center with respect to changing temperature. Here, we probe the NV electronic spin density as the surrounding crystal temperature changes from 10 K to 700 K by examining the hyperfine interactions with a nearest-neighbor $^{13}\mathrm{C}$. These results are corroborated with ab initio calculations and demonstrate that the change in hyperfine interaction is small and dominated by a change in the hybridization of the orbitals constituting the spin density, thus indicating that the defect and local crystal geometry is returning towards an undistorted structure at higher temperature.

The nitrogen-vacancy (NV) centre in diamond is a unique optical defect that is used in many applications today and methods to enhance its fluorescence brightness are highly sought after. We observed experimentally an enhancement of the NV quantum yield by up to 7% in bulk diamond caused by an external magnetic field relative to the field-free case. This observation is rationalised phenomenologically in terms of a magnetic field dependence of the NV excited state triplet-to-singlet transition rate. The theoretical model is in good qualitative agreement with the experimental results at low excitation intensities. Our results significantly contribute to our fundamental understanding of the photophysical properties of the NV defect in diamond.

We report on the room-temperature single photon emission dynamics originating from defect states in hBN. Photo induced modification of the emission characteristics of thee defects under blue and green illumination is shown.

The recent discovery of single-photon emitting defects hosted by the two-dimensional wide band gap semiconductor hexagonal boron nitride (hBN) has inspired a great number of experiments. Key characteristics of these quantum emitters are their capability to operate at room temperature with a high luminosity. In spite of large theoretical and experimental research efforts, the exact nature of the emission remains unresolved. In this work we utilize layer-by-layer etching of multilayer hBN to localize the quantum emitters with atomic precision. Our results suggest the position of the emitters correlates with the fabrication method: emitters formed under plasma treatment are always in close proximity to the crystal surface, while emitters created under electron irradiation are distributed randomly throughout the entire crystal. This disparity could be traced back to the lower kinetic energy of the ions in the plasma compared to the kinetic energy of the electrons in the particle accelerator. The emitter distance to the surface also correlates with the excited state lifetime: near-surface emitters have a shorter one compared to emitters deep within the crystal. Finite-difference time-domain and density functional theory simulations show that optical and electronic effects are not responsible for this difference, indicating effects such as coupling to surface defects or phonons might cause the reduced lifetime. Our results pave a way toward identification of the defect, as well as engineering the emitter properties.

Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. Here, we report room-temperature observations of strongly anisotropic photoluminescence patterns as a function of applied magnetic field for select quantum emitters in h-BN. Field-dependent variations in the steady-state photoluminescence and photon emission statistics are consistent with an electronic model featuring a spin-dependent inter-system crossing between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN., The observation of magnetic field dependence of defects hosted in hBN has been elusive so far. Here, the authors perform an investigation of spin-related effects in the optical emission from hBN defects, and observe a magnetic field dependence in the intensity of the photoluminescence spectrum.

There are diverse interdisciplinary applications for nanoscale-resolution electrometry of elementary charges under ambient conditions. These include characterization of two-dimensional electronics, charge transfer in biological systems, and measurement of fundamental physical phenomena. The nitrogen-vacancy center in diamond is uniquely capable of such measurements, however electrometry thus far has been limited to charges within the same diamond lattice. It has been hypothesized that the failure to detect charges external to diamond is due to quenching and surface screening, but no proof, model, or design to overcome this has yet been proposed. In this work we affirm this hypothesis through a comprehensive theoretical model of screening and quenching within a diamond electrometer and propose a solution using controlled nitrogen doping and a fluorine-terminated surface. We conclude that successful implementation requires further work to engineer diamond surfaces with lower surface-defect concentrations.

Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, tensile strain is applied to quantum emitters embedded in few-layer hBN films and both red and blue spectral shifts are realized with tuning magnitudes up to 65 meV, a record for any 2D quantum source. Reversible tuning of the emission and related photophysical properties is demonstrated. Rotation of the optical dipole in response to strain is also observed, suggesting the presence of a second excited state. A theoretical model is derived to describe strain-based tuning in hBN, and the rotation of the optical dipole. The study demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.

The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photoluminescence spectroscopy of SiV0 under uniaxial stress, we find the previous excited electronic structure of a single 3A1u state is incorrect, and identify instead a coupled 3Eu - 3A2u system, the lower state of which has forbidden optical emission at zero stress and so efficiently decreases the total emission of the defect: we propose a solution employing finite strain to form the basis of a spin-photon interface. Isotopic enrichment definitively assigns the 976 nm transition associated with the defect to a local mode of the silicon atom.

Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{��s}$ at low-temperature, and a spin relaxation limit of $T_1>25~\mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $\mathrm{SiV^{0}}$ and $\mathrm{NV^{-}}$ within the same optically-addressed volume, and $\mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $\mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology.

The negatively-charged nitrogen-vacancy (NV) center in diamond is at the frontier of quantum nano-metrology and bio-sensing. Recent attention has focused on the application of high-sensitivity thermometry using the spin resonances of NV centers in nano-diamond to sub-cellular biological and biomedical research. Here, we report a comprehensive investigation of the thermal properties of the center's spin resonances and demonstrate an alternate all-optical NV thermometry technique that exploits the temperature dependence of the center's optical Debye-Waller factor., 22 pages, 5 figures

In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its nuclear spins can yield exceedingly long spin coherence times. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 20. Surprisingly, the new charge state allows switching the optical response of single nodes facilitating full individual addressability., 8 pages, 4 figures, 1 table

We demonstrate deterministic formation of quantum emitter arrays in hexagonal Boron Nitride (hBN) at room temperature. The emitters are localized around the location of high strain provided by the nanopillar substrate.

The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here, we use two-colour optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen on localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories., Manipulating nitrogen vacancies in nitrogen-doped diamond is important for quantum information processing. Here the authors use a two-colour excitation to redistribute the localized trapping charges in type-1b diamonds.

Research on hybrid quantum systems for sensing and information processing often focuses on cantilevers containing single-photon emitters. Rather than a vibrating beam, here the authors design, fabricate, and characterize an architecture based on a sheet of high-quality diamond. Implanted $N\phantom{\rule{0}{0ex}}V$ centers are seen to be effective nanosensors of residual stress in the membrane, and its motion under static pressure and resonant vibration, in both dc and ac regimes. This platform is promising for piezometry, vibrometry, and optomechanical cavities.

Point defects in diamond known as nitrogen-vacancy centres have been shown to be sensitive to minute magnetic fields, even at room temperature. A demonstration that the spin associated with these defect centres is also sensitive to electric fields holds out the prospect of a sensor that can resolve, under ambient conditions, single spins and single elementary charges at the nanoscale.

The negatively charged nitrogen-vacancy center in diamond is highly suited to many quantum information processing applications. Although the center has been comprehensively observed experimentally, there still remains contention regarding some of the key aspects of the current theoretical model of the center. In this article, the explicit development of the defect-molecule model of the center and the implications of the accumulated ab initio results are discussed. The aspects of the model that require further ab initio investigation are clearly identified and a possible Hartree-Fock extension is motivated.

Applications of negatively charged nitrogen-vacancy center in diamond exploit the center's unique optical and spin properties, which at ambient temperature, are predominately governed by electron-phonon interactions. Here, we investigate these interactions at ambient and elevated temperatures by observing the motional narrowing of the center's excited state spin resonances. We determine that the center's Jahn-Teller dynamics are much slower than currently believed and identify the vital role of symmetric phonon modes. Our results have pronounced implications for center's diverse applications (including quantum technology) and for understanding its fundamental properties., Comment: 5 pages, 4 figures

We demonstrate a simple technique to fabricate cantilevers from bulk CVD sinle crystal diamond as well as from single crystal diamond membrane windows fabricated in a novel technique. Mechanical quality factors of cantilevers were measured. A mechanical Q-factor of as high as 500 was achieved.

We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ($\mathrm{SiV}^-$) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the $\mathrm{SiV}^-$ centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubit states in the ground states and propose methods to extend coherence times of $\mathrm{SiV}^-$ qubits., 19 pages, 6 figures