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1. Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

Author

Abdelhalim A. Saadi, Marc Margalef‐Rovira, Youcef Amara, Loïc Vincent, Sylvie Lepilliet, Christophe Gaquiere, and Philippe Ferrari

Subjects
Telecommunication, TK5101-6720, Electricity and magnetism, QC501-766
Abstract

Abstract In this paper, the slow‐wave coplanar stripline (S‐CPS) technology is utilised to design high performance and small footprint resonators operating within the millimetre‐wave band from 50 to 80 GHz. The proposed resonators are designed based on high quality factor quasi‐lumped capacitances and inductances offering a great flexibility in terms of design. The derivation of these components from the S‐CPS is explained theoretically and their behaviour is validated by EM simulation; an equivalent electrical model is also developed. The proposed concepts are demonstrated in the BiCMOS 55‐nm technology, and a good agreement between modelling, EM simulation and measurement results is achieved. The proposed devices could later be considered as interesting elementary blocks for the design of mm‐wave filters.

Published
2022
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2. SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

Author

Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquiere, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Disch, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, and Thomas Zwick

Subjects
Heterojunction bipolar transistors (HBTs), high-frequency measurements, millimeter wave, SiGe, technologies, terahertz, Telecommunication, TK5101-6720, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4
Abstract

This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented.

Published
2021
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4. Special Session on RF/5G Test.

Author

William R. Eisenstadt, Mark Roos, Devin Morris, José Luis González-Jiménez, Christopery Mounet, Manuel J. Barragán, Gildas Léger, Florent Cilici, Estelle Lauga-Larroze, Salvador Mir, Sylvain Bourdel, Marc Margalef-Rovira, Issa Alaji, Haitham Ghanem, Guillaume Ducournau, and Christophe Gaquière

Published
2022
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9. Low-Earth Orbit User Segment in the Ku and Ka-Band: An Overview of Antennas and RF Front-End Technologies

Author

Giandomenico Amendola, Daniele Cavallo, Tobias Chaloun, Nicolas Defrance, George Goussetis, Marc Margalef-Rovira, Enrica Martini, Oscar Quevedo-Teruel, Vaclav Valenta, Nelson J.G. Fonseca, Mauro Ettorre, Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica [Calabria] (DIMES), Università della Calabria [Arcavacata di Rende] (Unical), Delft University of Technology (TU Delft), Universität Ulm - Ulm University [Ulm, Allemagne], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Heriot-Watt University [Edinburgh] (HWU), Università degli Studi di Siena = University of Siena (UNISI), Royal Institute of Technology [Stockholm] (KTH ), Agence Spatiale Européenne = European Space Agency (ESA), Institut d'Électronique et des Technologies du numéRique (IETR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Nantes Université - pôle Sciences et technologie, and Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)

Subjects
Low earth orbit satellites, [PHYS]Physics [physics], Satellite antennas, [SPI]Engineering Sciences [physics], Radiation, Satellites, Radio frequency, Satellite antennas, Satellites, Array signal processing, Low earth orbit satellites, Microwave communication, Orbits, Radio frequency, Array signal processing, Orbits, Electrical and Electronic Engineering, Microwave communication, Condensed Matter Physics
Abstract

International audience; Low-Earth orbit (LEO) constellations are revolutionizing the world of satellite communication (Satcom), providing new opportunities to manufacturers and operators and enabling innovative and attractive services to users.

Published
2023

10. Compact Patch-like Bandpass Filter using grounded CSRR on BiCMOS 55nm technology

Author

Mohammed Wehbi, Marc Margalef-Rovira, Cedric Durand, Philippe Ferrari, Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), no information, and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
[SPI]Engineering Sciences [physics], patch filter, BiCMOS Technology, CSRR, mm-waves
Abstract

ORAL session EuMIC03 Advanced Microwave Components; International audience; This paper presents a design perspective of 2 nd order patch-like grounded Complementary-Split-Ring-Resonator (CSRR) filter on BiCMOS 55-nm technology at 50 GHz. The advantage of using CSRR topology combined with grounded via allows a great reduction of the overall size to \boldsymbol{\lambda/7\times\lambda/13}\ \mathbf{mm}^{2} . General coupling matrix representation along with extracted external quality factor and resonators' pair coupling is conducted. The measured results show an insertion loss of 5 dB with a return loss better than 11 dB in the passband. The achieved fractional bandwidth is 23%.

Published
2022

11. mm-Wave Through-Load Element for On-Wafer Measurement Applications

Author

Sylvie Lepilliet, Philippe Ferrari, Loic Vincent, Christophe Gaquiere, Olivier Occello, Emmanuel Pistono, Abdelhalim A. Saadi, Marc Margalef-Rovira, Vanessa Avramovic, Manuel J. Barragan, Sylvain Bourdel, Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), NXP Semiconductors [France], Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
Through-load, transfer-switch millimeter-wave, attenuator, 02 engineering and technology, BiCMOS, law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, slow-wave, Electrical and Electronic Engineering, Physics, Attenuator (electronics), on-wafer, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), Transistor, Electrical engineering, Transfer switch, 3-dB coupler, [SPI.TRON]Engineering Sciences [physics]/Electronics, Return loss, business, Voltage
Abstract

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50- $\Omega $ load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50- $\Omega $ load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50- $\Omega $ load connection.

Published
2021

12. Nanowire-Based 3-D Transmission-Line Transformer for Millimeter-Wave Applications

Author

Tadeu M. Frutuoso, Joao Le, Yoann Berthoud, Julio M. Pinheiro, Marc Margalef-Rovira, Philippe Ferrari, Gustavo P. Rehder, Ariana L. C. Serrano, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Escola Politecnica da Universidade de Sao Paulo [Sao Paulo], Laboratoire de Génie Electrique de Grenoble (G2ELab ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), and Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )

Subjects
millimeter-wave circuit, PACS 8542, 3-D circuit, system integration, transformer, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Condensed Matter Physics
Abstract

International audience; In this letter, 3-D transformers based on transmission lines (TLs) working at mm-wave frequencies are presented. They were realized in a low-cost technology based on metallic-filled nanoporous membranes. Several transformers were designed and measured with different numbers of turns, from 1 to 6 turns. They exhibit working frequencies from 14.5 up to 110 GHz. The 1-dB bandwidth (BW) of the realized transformers is better than 12 GHz, and the insertion loss (IL) is between 1.1 and 1.6 dB, thus demonstrating a high efficiency at mm-waves. Transformers could be further improved by better optimizing the TLs and their return current path, which is a key parameter to be considered, given the distributed nature of the proposed transformers.

Published
2022

13. Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization

Author

Mattia Maggi, Syrine Hidri, Loic Marnat, Mauro Ettorre, Gerardo Orozco, Marc Margalef-Rovira, Christophe Gaquiere, Kamel Haddadi, Institut d'Électronique et des Technologies du numéRique (IETR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), MC2-Technologies, Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN ), and no information

Subjects
Scattering, [SPI]Engineering Sciences [physics], Radiation, Millimeter wave technology, 5G mobile communication, Radar antennas, Phased arrays, Wireless communication, Electrical and Electronic Engineering, Millimeter wave radar, Condensed Matter Physics
Abstract

International audience; Millimeter-wave (mm-wave) technology is a viable candidate to address the growing data traffic in 5G wireless communication and beyond. However, challenges related to free-space propagation loss, atmospheric absorption, scattering, and nonline-of-sight propagation must be addressed to benefit from the promised bandwidth available in the mm-wave regime. In this context, phased-array technology is considered vital to provide high-speed and seamless wireless solutions to the industry. A phased array can be defined as a multiple-antenna system that electronically controls the radiated electromagnetic (EM) beam. The official origin of the antenna array concept is attributed to Guglielmo Marconi. A repeated Morse code signal letter “S” from Poldhu, United Kingdom to St. John’s in Canada was successfully demonstrated in December 1901, using a two-element antenna array. In the early 1940s, Luis Walter Alvarez designed the first electronically scanning phased-array radar. Both scientists were awarded the Nobel Prize for their discovery.

Published
2022

14. Mm-wave Dual-Mode Patch Filters on 55-nm BiCMOS

Author

Philippe Ferrari, Hamza Issa, Abdelhalim A. Saadi, Loïc Vincent, Sylvie Lepilliet, Marc Margalef-Rovira, and Mohammed Wehbi

Abstract

In this paper, the patch concept is applied to the design of millimeter-wave band-pass filters in BiCMOS 55 nm technology. The operation frequencies are 120 GHz and 200 GHz, respectively. A via- and slot-based approach makes filters very compact, albeit patch-based, through a multi-mode approach. At 200 GHz, the side of the patch is only 194 μm long, or about a quarter wavelength, compared to half a wavelength for a conventional patch. The dependence of performance on the thickness of the Back-End-Of-Line is studied, and the design method is detailed. The performance is very good, with for example a filter operating at 200 GHz with a relative bandwidth of 23% and insertion loss of 3 dB. Finally, the prospect of using a thicker Back-End-Of-Line, offered as an option in 55-nm BiCMOS technology, makes it possible to show that even better performance can be achieved, with insertion loss below 3 dB.

Published
2022

15. Design of coupled slow-wave CPW millimeter-wave bandpass filter beyond 100 GHz in 55-nm BiCMOS technology

Author

Marc Margalef-Rovira, Olivier Occello, Christophe Gaquiere, Loic Vincent, Sylvie Lepilliet, Abdelhalim A. Saadi, Philippe Ferrari, NXP Semiconductors [France], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
010302 applied physics, Materials science, business.industry, Flatness (systems theory), Topology (electrical circuits), Stopband, Filter (signal processing), STRIPS, 01 natural sciences, Microstrip, Electronic, Optical and Magnetic Materials, law.invention, [SPI]Engineering Sciences [physics], Band-pass filter, law, 0103 physical sciences, Extremely high frequency, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

International audience; The design and experimental results of millimeter-wave bandpass filters (BPFs) implemented in 55-nm BiCMOS technology and operating around 120 GHz are presented in this article. Slightly modified coupled line filters' structures are used in the designs. It allows generating the transmission zero at the upper stopband, leading to the selectivity of enhanced filters. The coupled line structure is implemented in two technologies, microstrip coupled lines and coupled slow-wave (SW) coplanar waveguides (CS-CPWs). The latter shows more design flexibility, allowing to reach a better filtering performance than the microstrip filters, i.e., better in-band flatness and higher selectivity. Good agreement is achieved between simulation, modeling, and measurement results. Also, the overall length of the filter based on CS-CPWs is smaller as compared to the filters based on the microstrip lines, thanks to the SW propagation.

Published
2021

16. Slow-wave Microwave and Mm-wave Passive Circuits

Author

Philippe Ferrari, Anne-Laure Franc, Marc Margalef-Rovira, Gustavo P. Rehder, Ariana Lacorte Caniato Serrano, Philippe Ferrari, Anne-Laure Franc, Marc Margalef-Rovira, Gustavo P. Rehder, and Ariana Lacorte Caniato Serrano

Subjects
Electric circuits, Microwave circuits
Abstract

Comprehensive resource presenting the fundamentals and state of the art concepts, design examples, relevant components, and technology Slow-wave Microwave and mm-wave Passive Circuits presents the fundamentals and state of the art concepts, design examples, relevant components, and technology of the subject, plus examples of circuit layout optimization using slow-wave circuits. Recent advances in aspects of the slow-wave concept are covered, with potential applications including automotive radars, medical and security applications, and 5G and future 6G for very high-speed communications. The text considers a variety of slow-wave structures and associated concepts which are useful for circuit design, each structure electrically modeled with clear illustration. The highly qualified authors show that the use of the slow-wave concept can, in some cases, improve the performance of passive circuits. The techniques proposed make it possible to reduce the size and/or the performance of the circuits, with a beneficial cost-saving effect on semiconductor materials. Concepts are applied to several technologies, namely CMOS, PCB (Printed Circuit Board) and nanowires. Sample topics covered include: Concepts of energy storage with examples of slow-wave CPW (S-CPW), slow-wave SIW (SW-SIW), and slow-wave microstrip (S-MS),Transmission line topology and application in integrated technologies (CMOS), including possibilities offered by the BEOL (Back-End-Of-Line),Effect of the geometrical dimensions on the transmission line parameters (Zc, α, εreff, and Q) and comparisons between conventional CPW and CPS, and slow-wave CPW and CPS, Performance of slow-wave coupled lines and comparison with conventional microstrip coupled lines. Slow-wave Microwave and mm-wave Passive Circuits is a highly useful resource for graduate students (best complemented with a basic book on microwaves), engineers, and researchers. The text is also valuable for physicists wishing to implement comparable techniques in optics or mechanics.

Published
2024

17. High-Performance Compact Reflection-Type Phase Shifter operating at 2 GHz Using a Transdirectional Coupler

Author

Philippe Ferrari, Marc Margalef-Rovira, Olivier Occello, Fabien Ndagijimana, Loic Vincent, and Leonel Tiague

Subjects
Materials science, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), 020206 networking & telecommunications, Topology (electrical circuits), 02 engineering and technology, Lambda, Reflection (mathematics), 0202 electrical engineering, electronic engineering, information engineering, Figure of merit, Optoelectronics, Insertion loss, business, Realization (systems), Phase shift module
Abstract

In this paper, a compact and high-performance Reflection-Type Phase Shifter operating around 2 GHz is proposed. It is realized in standard PCB technology by using a very compact transdirectional coupler and simple tunable reflection loads. The circuit size is equal to 0.29 • 0.1$\lambda _g^2$. This small size is achieved without sacrificing performance; the figure of merit, given by the ratio of the maximum phase shift divided by the maximum insertion loss reaches 169°/dB at 2.15 GHz, which is comparable to the average performance published in the literature. The demonstrated small size paves the way for the realization of very compact RF feeding networks for phased arrays.

Published
2021

18. SiGe HBTs and BiCMOS technology for present and future millimeter-wave system: [Invited]

Author

Marc Margalef-Rovira, Haitham Ghanem, Fred Buchali, Holger Rucker, Pascal Chevalier, Rolf Schmid, Marina Deng, Tim Maiwald, Christophe Gaquiere, A. Mukherjee, Horst Hettrich, Thomas Zimmer, Josef Bock, Paulius Sakalas, Karsten Schuh, Karina Schneider, Michael Moller, Sebastien Fregonese, Wolfgang Templ, Bjorn Debaillie, Michael Collisi, Philippe Ferrari, Alper Karakuzulu, Caroline Maye, Akshay Visweswaran, Thomas Zwick, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Infineon Technologies, Nokia Bell Labs [Stuttgart], STMicroelectronics [Crolles] (ST-CROLLES), Saarland University [Saarbrücken], IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Micram Microelectronic GmbH, IHP - Leibniz-Institut für innovative Mikroelektronik, Friedrich–Alexander University Erlangen–Nürnberg (FAU), Technical University of Dresden, MDPI Corporation, National Center of Fundamental Sciences and Technology [Lithuania], Baltic Institute of Advanced Technology, Karlsruher Institut für Technologie (KIT), The research leading to these results has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement no. 737454, project 'TARANTO', Laboratoire commun STMicroelectronics-IEMN T1, PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Computer science, SiGe, high-speed optical transmission system, 02 engineering and technology, TK5101-6720, BiCMOS, Electric apparatus and materials. Electric circuits. Electric networks, Noise figure, terahertz, 020210 optoelectronics & photonics, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, high-frequency measurements, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, TK452-454.4, technologies, Total harmonic distortion, Heterojunction bipolar transistors (HBTs), wireless communication systems, business.industry, Emphasis (telecommunications), 020206 networking & telecommunications, modeling, Transmission system, millimeter wave, visual_art, Electronic component, visual_art.visual_art_medium, Telecommunication, System integration, Terabit, business
Abstract

International audience; This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented.

Published
2021
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19. ESD mm-wave-circuit protection: 3-dB couplers

Author

Géraldine Pelletier, Christophe Gaquiere, Johan Bourgeat, Jean-Marc Duchamp, Sylvie Lepilliet, Vanessa Avramovic, Philippe Ferrari, Marc Margalef-Rovira, Manuel J. Barragan, Sylvain Bourdel, Emmanuel Pistono, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire de Génie Electrique de Grenoble (G2ELab ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Puissance - IEMN (PUISSANCE - IEMN), European Union through Toward Advanced BiCMOS NanoTechnology Platforms for RF Applications TARANTO (Grant Number: ECSEL JU GA 737454), General Directorate for Enterprises DGA France, PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Reliable RF and Mixed-signal Systems (TIMA-RMS)

Subjects
ESD protection, BiCMOS, 01 natural sciences, 7. Clean energy, 0103 physical sciences, couplers, Insertion loss, slow-wave, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Physics, Electrostatic discharge, business.industry, Attenuation, CMOS, Electrical engineering, mmwave, Electronic, Optical and Magnetic Materials, Human-body model, PACS 8542, Return loss, Node (circuits), business
Abstract

International audience; This article presents an innovative architecture for the implementation of an electrostatic discharge (ESD) protection for millimeter-wave (mm-wave) devices. The proposed architecture is based on the use of 3-dB couplers, whose coupled outputs have been shorted to the ground node. In order to reduce the physical dimensions of the 3-dB coupler and to reach the high coupling required for this application, the Coupled Slow wave CoPlanar Waveguides (CS-CPWs) architecture was favored. The demonstrator of the proposed system was fabricated in the STMicroelectronics 55-nm bipolar-cmos (BiCMOS) technology, demonstrating a return loss greater than 10 dB across the 50-160-GHz frequency range, an attenuation greater than 18 dB below 5 GHz, and a minimum insertion loss at 90 GHz of 0.55 dB. To prove the performance of the proposed solution, human body model (HBM) and charge device model (CDM) events were simulated at the input of the 3-dB coupler, showing that the proposed architecture effectively protects against these events while minimally impacting the RF path.

Published
2021

20. A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications

Author

W. Aouimeur, Estelle Lauga-Larroze, Daniel Gloria, Jean-Daniel Arnould, Marc Margalef-Rovira, Issa Alaji, Christophe Gaquiere, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), This work is supported by the project ANR-14-CE260027-BISCIG of the French National Research Agency (ANR). The authors wish to acknowledge Jose Moron Guerra from Asygn Grenoble, Alexandre Silligaris from CEA-Leti Grenoble and Sylvie Lepilliet from IEMN for their help in design and characterization., PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, ANR-14-CE26-0027,BISCIG,Caractérisation totalement intégrée en bande G(2014), Reliable RF and Mixed-signal Systems (RMS ), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
business.industry, Computer science, 020208 electrical & electronic engineering, Overhead (engineering), Electrical engineering, 020206 networking & telecommunications, Topology (electrical circuits), 02 engineering and technology, Transfer switch, BiCMOS, CMOS, Built-in self-test, G band, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double-Shunt topology, respectively. In the 140 to 195 GHz frequency range, the Double-Shunt Transfer Switch shows an isolation between 27 and 46 dB, and an insertion loss between 5 and 7 dB. Compared to the Single-Shunt Transfer Switch, the double shunt switch presents a much better isolation while having a quite comparable insertion loss and area overhead. To the best of our knowledge, the proposed switches are the first fully integrated transfer switches in BiCMOS or CMOS technologies.

Published
2020

21. Miniaturization of Transmission Lines: Meandered Slow-wave CPWs

Author

Tadeu Mota-Frutuoso, Emmanuel Pistono, Manuel J. Barragan, Christophe Gaquiere, Marc Margalef-Rovira, Philippe Ferrari, Loic Vincent, Abdelhalim A. Saadi, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), This work has been funded by the European Union (ECSEL JU GA 737454: TowARds Advanced BiCMOS NanoTechnology platforms for RF applicatiOns -Taranto), and the General Directorate for Enterprises (DGE) in France., European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
010302 applied physics, Materials science, business.industry, CPW, 020206 networking & telecommunications, Ranging, transmission line, 02 engineering and technology, Dielectric, 01 natural sciences, Microstrip, Electric power transmission, CMOS, Transmission line, Q factor, PACS 85.42, 0103 physical sciences, mm-wave, 0202 electrical engineering, electronic engineering, information engineering, Miniaturization, Optoelectronics, slow-wave, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; This work presents novel transmission line structures based on Meandered Slow-wave CoPlanar Waveguides (MS-CPWs), aiming to achieve high miniaturization. As a proof-of-concept, these two kinds of transmission lines were designed and fabricated in the AMS 0.35 mu m CMOS technology together with classical straight and meandered microstrip lines. Measurement results from 70 kHz to 100 GHz of the fabricated transmission lines are presented. At 80 GHz, all the considered transmission lines present similar quality factors, ranging between 10 and 14. On the other hand, at this frequency, one of the developed MS-CPW presents an effective dielectric constant of 88, while the meandered microstrip exhibits an equivalent effective dielectric constant of 51, thus leading to higher compactness for the MS-CPW.

Published
2020

22. mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

Author

Christophe Gaquiere, Abdelhalim A. Saadi, Philippe Ferrari, Manuel J. Barragan, Sylvain Bourdel, Emmanuel Pistono, Marc Margalef-Rovira, Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Reliable RF and Mixed-signal Systems (TIMA-RMS), and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
Materials science, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 7. Clean energy, law.invention, law, 3-dB slow-wave coupler, in-situ reflectometer, mm-wave, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, NMOS logic, Load control switch, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), Transistor, 020206 networking & telecommunications, Biasing, switch, PACS 85.42, Power dividers and directional couplers, Optoelectronics, business, on-wafer calibration, Voltage
Abstract

International audience; In this paper, an innovative millimeter-wave (mm-wave) through-load switch for in-situ reflectometers and on-wafer calibration is proposed. This two-port device can switch between two states: (i) a through connection or (ii) a 50 Ω load for both of its ports. The through-load switch is composed of a 3-dB directional coupler and two nMOS transistors controlled through a biasing voltage applied to their gate. Measurement results of a 120-GHz 3-dB directional coupler are provided up to 145 GHz together with EM simulations and circuit-level simulations up to 220 GHz of the through-load switch. A wide bandwidth is obtained, from 73 GHz to 179 GHz, with limited insertion loss of 2 dB.

Published
2020

23. Highly tunable high-Q inversion-mode MOS varactor in the 1-325-GHz band

Author

Abdelhalim A. Saadi, Manuel J. Barragan, Sylvain Bourdel, Christophe Gaquiere, Emmanuel Pistono, Cedric Durand, Marc Margalef-Rovira, Philippe Ferrari, Daniel Gloria, Loic Vincent, Sylvie Lepilliet, Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), 0.13039/501100011688-European Union through Toward Advanced BiCMOS NanoTechnology Platforms for RF Applications, Taranto (Grant Number: ECSEL JU GA 737454), PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
010302 applied physics, Materials science, business.industry, Electrical model, Semiconductor device modeling, 01 natural sciences, Capacitance, Bicmos technology, Electronic, Optical and Magnetic Materials, PACS 8542, CMOS, Logic gate, Q factor, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Varicap
Abstract

This article presents the design, experimental results, and modeling of an inversion-mode CMOS varactor integrated in the STMicroelectronics 55-nm BiCMOS technology. The device was characterized from 1 to 325 GHz, demonstrating high-quality factor at millimeter-waves. For instance, a quality factor of 7 at around 190 GHz for a tuning ratio ( ${C}_{\text {max}}/{C}_{\text {min}}$ ) greater than 4 was measured. This performance overpasses that of accumulation-mode varactors usually provided in CMOS technologies design kits, for frequencies beyond about 100 GHz. In addition, a small-signal electrical model is provided from 100 to 250 GHz.

Published
2020

24. Design of mm-wave slow-wave coupled coplanar waveguides

Author

Manuel J. Barragan, Sylvain Bourdel, Sylvie Lepilliet, Marc Margalef-Rovira, Jose Lugo-Alvarez, Florence Podevin, Emmanuel Pistono, Loic Vincent, Christophe Gaquiere, Alfredo Bautista, Abdelhalim A. Saadi, Philippe Ferrari, Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Advanced Silicon S.A. (AS), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Reliable RF and Mixed-signal Systems (TIMA-RMS), and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
coupling coefficient, Semiconductor device modeling, CMOS/BiCMOS technology, 02 engineering and technology, STRIPS, BiCMOS, Microstrip, law.invention, Optics, slow-wave concept, law, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Physics, Radiation, business.industry, Coplanar waveguide, 020206 networking & telecommunications, Condensed Matter Physics, PACS 8542, CMOS, Power dividers and directional couplers, business, Coupling coefficient of resonators, directional couplers
Abstract

International audience; This paper focuses on the design of high-performance Coupled Slow-wave CoPlanar Waveguide (CS-CPW) in CMOS technologies for the mm-wave frequency bands. First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two millimeter-wave backward directional 3-dB couplers are designed in a Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) 55-nm technology for 120 and 185-GHz operation, respectively. Simulation and experimental results demonstrate that the use of the CS-CPW concept leads to state-of-the-art performance, with a good agreement between the analytical model, electromagnetic simulations and measurement results.

Published
2020

25. Low‐loss broadband (DC to 220 GHz) S‐CPW to S‐CPS transition for S‐CPS coplanar probing

Author

Abdelhalim A. Saadi, Philippe Ferrari, Christophe Gaquiere, Marc Margalef-Rovira, Sylvie Lepilliet, Loic Vincent, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, business.industry, Coplanar waveguide, 020208 electrical & electronic engineering, 02 engineering and technology, STRIPS, Signal, law.invention, [SPI]Engineering Sciences [physics], Electric power transmission, law, Broadband, 0202 electrical engineering, electronic engineering, information engineering, Return loss, Optoelectronics, Insertion loss, Electrical and Electronic Engineering, business, Stripline
Abstract

International audience; The practical issue of probing coplanar stripline (CPS) structures is addressed in this Letter. A compact slow-wave coplanar waveguide (S-CPW) to slow-wave CPS (S-CPS) transition was designed and fabricated in a 55 nm BiCMOS process of STMicroelectronics. The signal strips of the slow-wave CPW and slow-wave CPS have been directly connected while the ground strips have been tied together through combination of transmission lines laid out on the top metal layer of the back-end-of-line of the technology. Thanks to its flexibility, the proposed transition can be resized to match with a wide range of slow-wave CPS slot. Tested from DC to 220 GHz, the back-to-back transition structure showed insertion loss lower than 1.4 dB and return loss better than 15 dB, respectively. To the best of author's knowledge, it is the first integrated slow-wave CPW/CPS transition introduced within the mentioned mm-wave band.

Published
2019

26. Millimeter-wave Resonator Based on High Quality Factor Inductor and Capacitor based on Slow-Wave CPS

Author

Youcef Amara, Abdelhalim A. Saadi, Marc Margalef-Rovira, and Philippe Ferrari

Subjects
010302 applied physics, Materials science, business.industry, 020206 networking & telecommunications, 02 engineering and technology, Inductor, 01 natural sciences, law.invention, Resonator, Capacitor, Electric power transmission, CMOS, law, 0103 physical sciences, Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Stripline, Shunt (electrical)
Abstract

This work introduces the concept of a quasi-lumped LC resonator integrated in CMOS technology and based on slow-wave transmission lines. The quasi-lumped inductor and capacitor constituting the resonator are synthesized using slow-wave coplanar stripline exhibiting high quality factor and small footprint. The proposed concept is demonstrated at mm-wave frequencies around 40 GHz through the design of a shunt resonator. Good agreement between simulation and measurement is observed.

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