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Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS2-based FETs targeting RF applications., Comment: 6 pages, 6 figures

We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier configuration. The phase of the RF signal is controlled by exploiting the quantum capacitance of graphene and its dependence on the terminal transistor biases. In particular, by independently tuning the applied gate-to-source and drain-to-source biases, we observe that the phase of the signal, in the super-high frequency band, can be varied nearly 200 degrees with a constant gain of 2.5 dB. Additionally, if only the gate bias is used as control signal, and the drain is biased linearly dependent on the former (i.e., in a completely analogue operation), a phase shift of 85 degrees can be achieved making use of just one transistor and keeping a gain of 0 dB with a maximum variation of 1.3 dB. The latter design can be improved by applying a balanced branch-line configuration showing to be competitive against other state-of-the-art phase shifters. This work paves the way towards the exploitation of graphene technology to become the core of active analogue phase shifters for high-frequency operation., Comment: 10 pages, 10 figures, 2 tables

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. \mbox{Here, we analyse} in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by~evaluating their cut-off frequency., Comment: 12 pages, 8 figures

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low power dissipation. Members of the 2D transition metal dichalcogenides (TMDCs) have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T'-phase embedded into the 2H-phase of thin semiconducting molybdenum-disulfide (MoS2) by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T' phases.

We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain., Comment: 9 pages, 8 figures

The emittance preservation in the Beam Delivery System (BDS) is one of the major challenges in CLIC. The fast detuning of the final focus optics requires an on-line tuning procedure in order to keep luminosity close to the maximum. Different tuning techniques have been applied to the CLIC BDS and in particular to the Final Focus System (FFS) in order to mitigate static and dynamic imperfections. Some of them require a fast luminosity measurement. Here we study the possibility to use beam-beam backgrounds processes at CLIC 3 TeV CM energy as fast luminosity signal. In particular the hadrons multiplicity in the detector region is investigated., Comment: Proceedings of LCWS11

We report observations of the eclipsing classical nova V368 Aql (Nova Aql 1936 No. 2). These data reveal that the orbital period previously published by Diaz & Bruch is an alias of the true orbital period. A total of 14 eclipses (12 complete and 2 partial) over 25 nights of observation have established that the orbital period of V368 Aql is 0.6905093(1) d (16.57 hr), which is roughly twice the previously published period. With its revised orbital period, V368 Aql now joins other nova systems with periods in excess of 0.5 day that dominate the long end of the orbital period distribution of cataclysmic variables., Comment: Accepted for publication in the PASP

Time-resolved CCD photometry is presented of the V~17 optical counterpart of the newly-discovered, hard-X-ray-emitting polar Swift J2619.4+2619. A total of ~20 hr of data obtained over five nights in various bandpasses (B, V, R, and I) reveals a strong quasi-sinusoidal modulation in the light curve at a best-fitting period of 0.1254 d (3.01 hr), which we associate with the orbital period of the system (one-day aliases of this period at 0.1114 d and 0.1435 d are considered, but appear to be ruled out by our analysis). The amplitude of the modulation increases with wavelength from ~0.8 mag in B to ~1.1 mag in R and I. The increase in amplitude with wavelength is typical of polar systems where the modulated radiation comes from cyclotron emission. The combination of the relatively long orbital period and the emission of hard X-rays suggest that Swift J2619.4+2619 may be a good candidate for an asynchronous polar system., Comment: 15 pages, 5 figures, Accepted for publication in the April 2008 PASP