Search

With the ever-reducing sizes of electronic devices, the problem of electromigration (EM) has become relevant and requires attention. However, only the EM behavior of Sn-Ag solders within the solder joint structure has been focused on thus far. Therefore, in this study, a thin metallic film composed of Sn-3.5Ag (wt.%) was subjected to a current density of 7.77 × 10 4 A/cm 2 at a temperature of 15 °C to test the ability of existing EM models to predict the nucleation and evolution of voids generated by the resulting atomic migration. A computer simulation was then used to compute the coupled current distribution, thermal distribution, and atomic migration problems. It relied on an original random walk (RW) method, not previously applied to this problem, that is particularly well suited for modelling domains that undergo changes owing to the formation of voids. A comparison of the experimental results and computer simulations proves that the RW method can be applied successfully to this class of problems, but it also shows that imperfections in the film can lead to deviations from predicted patterns.

Miniaturization of electronic devices has led to the development of 3D IC packages which require ultra-small-scale interconnections. Such small interconnects can be completely converted into Cu-Sn based intermetallic compounds (IMCs) after reflow. In an effort to improve IMC based interconnects, an attempt is made to add Ni to Cu-Sn-based IMCs. Multilayer interconnects consisting of stacks of Cu/Sn/Cu/Sn/Cu or Cu/Ni/Sn/Ni/Sn/Cu/Ni/Sn/Ni/Cu with Ni = 35 nm, 70 nm, and 150 nm were electrodeposited sequentially using copper pyrophosphate, tin methanesulfonic, and nickel Watts baths, respectively. These multilayer interconnects were investigated under room temperature aging conditions and for solid-liquid reactions, where the samples were subjected to 250 °C reflow for 60 s and also 300 °C for 3600 s. The progress of the reaction in the multilayers was monitored by using X-ray Diffraction, Scanning Electron Microscope, and Energy dispersive X-ray Spectroscopy. FIB-milled samples were also prepared for investigation under room temperature aging conditions. Results show that by inserting a 70 nanometres thick Ni layer between copper and tin, premature reaction between Cu and Sn at room temperature can be avoided. During short reflow, the addition of Ni suppresses formation of Cu₃Sn IMC. With increasing Ni thickness, Cu consumption is decreased and Ni starts acting as a barrier layer. On the other hand, during long reflow, two types of IMC were found in the Cu/Ni/Sn samples which are the (Cu,Ni)₆Sn₅ and (Cu,Ni)₃Sn, respectively. Details of the reaction sequence and mechanisms are discussed.

The interplay between porosity and electromigration can be used to manipulate atoms resulting in mass fabrication of nanoscale structures. Electromigration usually results in the accumulation of atoms accompanied by protrusions at the anode and atomic depletion causing voids at the cathode. Here we show that in porous media the pattern of atomic deposition and depletion is altered such that atomic accumulation occurs over the whole surface and not just at the anode. The effect is explained by the interaction between atomic drift due to electric current and local temperature gradients resulting from intense Joule heating at constrictions between grains. Utilizing this effect, a porous silver substrate is used to mass produce free-standing silver nanorods with very high aspect ratios of more than 200 using current densities of the order of 10(8) A/m(2). This simple method results in reproducible formation of shaped nanorods, with independent control over their density and length. Consequently, complex patterns of high quality single crystal nanorods can be formed in-situ with significant advantages over competing methods of nanorod formation for plasmonics, energy storage and sensing applications.

In order to produce electronic devices that can survive harsh environments it is essential that the solder joints are very reliable and this has led to the development of composite solders. One approach to the manufacture of such solders is to disperse silica nanoparticles into it to improve their mechanical and fatigue characteristics. However, this is difficult to achieve using bare silica particles because they are not "wettable" in the solder matrix and so cannot be dispersed efficiently. In an attempt to alleviate this issue it has been found that if the silica nanoparticles are first plated with gold then this problem of wetting can, to some extent, be overcome. However, the particles must be completely encapsulated with gold which, using the method previously described by workers at Kings College London, was found to be difficult to accomplish. In this short communication the effect of ultrasound on the gold coverage is described. Different frequencies of ultrasound were used (20, 850 and 1176 kHz) and it was found that higher frequencies of ultrasound improved the coverage and dispersion of the gold nanoparticles over silica during the seeding step compared to simple mechanical agitation. This subsequently led to a more complete encapsulation of gold in the plating stage., (Copyright © 2010 Elsevier B.V. All rights reserved.)