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This research explores refined boundary conditions for a traction-free surface in a non-local micropolar half-space, combining non-local and micropolar elasticity effects to study Rayleigh wave propagation in an isotropic, homogeneous medium. This study revisits the solution for Rayleigh waves obtained within the framework of Eringen's non-local differential model. It highlights that the equivalence between the non-local differential and integral formulations breaks down for a micropolar half-space and can only be restored under specific additional boundary conditions. For mathematical tractability, equivalence is assumed for a defined subset of stresses. Asymptotic analysis is further employed to capture the effects of the boundary layer within the non-local micropolar half-space. This technique finally derives the refined boundary conditions for micropolar media.

This article exploits group-IV germanium (Ge) quantum dots (QDs) on Silicon-on-Insulator (SOI) grown by molecular beam epitaxy (MBE) in order to explore its optical behaviour in the Terahertz (THz) regime. In this work, Ge QDs, pumped by an above bandgap near infrared wavelength, exhibit THz amplitude modulation in the frequency range of 0.1-1.0 THz. The epitaxial Ge QDs outperform reference SOI substrate in THz amplitude modulation owing to higher carrier generation in weakly confined dots compared to its bulk counterpart. This is further corroborated using theoretical model based on the non-equilibrium Green's function (NEGF) method. This model enables the calculation of photo carriers generated (PCG) and their confinement in the Ge QD region. Our model also reroutes the calculation from PCG to corresponding plasma frequency and hence to refractive index and THz photo-conductivity. Moreover, the photo-generated confined holes accumulation at the Ge QDs-Si interface is elevated after optical illumination, leading to a decreased THz photo-conductivity. This augmentation in THz photo-conductivity contributes to a significant enhancement of THz modulation depth ~77% at Ge QDs-Si interfaces compared to bare SOI at 0.1 THz., Comment: 15 pages, 5 figures

Quantum networks require quantum nodes with coherent optical interfaces and multiple stationary qubits. In terms of optical properties, semiconductor quantum dots are highly compelling, but their adoption as quantum nodes has been impaired by the lack of auxiliary qubits. Here, we demonstrate a functional quantum register in a semiconductor quantum dot leveraging the dense, always-present nuclear spin ensemble. We prepare 13,000 host nuclear spins into a single many-body dark state to operate as the register logic state $|0\rangle$. The logic state $|1\rangle$ is defined as a single nuclear magnon excitation, enabling controlled quantum-state transfer between the electron spin qubit and the nuclear magnonic register. Using 130-ns SWAP gates, we implement a full write-store-retrieve-readout protocol with 68.6(4)% raw overall fidelity and a storage time of 130(16) $\mu$s in the absence of dynamical decoupling. Our work establishes how many-body physics can add step-change functionality to quantum devices, in this case transforming quantum dots into multi-qubit quantum nodes with deterministic registers.

A central spin qubit interacting coherently with an ensemble of proximal spins can be used to engineer entangled collective states or a multi-qubit register. Making full use of this many-body platform requires tuning the interaction between the central spin and its spin register. GaAs quantum dots offer a model realization of the central spin system where an electron qubit interacts with multiple ensembles of $\sim 10^{4}$ nuclear spins. In this work, we demonstrate tuning of the interaction between the electron qubit and the nuclear many-body system in a GaAs quantum dot. The homogeneity of the GaAs system allows us to perform high-precision and isotopically selective nuclear sideband spectroscopy, which reveals the single-nucleus electronic Knight field. Together with time-resolved spectroscopy of the nuclear field, this fully characterizes the electron-nuclear interaction for a priori control. An algorithmic feedback sequence selects the nuclear polarization precisely, which adjusts the electron-nuclear exchange interaction in situ via the electronic g-factor anisotropy. This allows us to tune directly the activation rate of a collective nuclear excitation (magnon) and the coherence time of the electron qubit. Our method is applicable to similar central-spin systems and enables the programmable tuning of coherent interactions in the many-body regime., Comment: 9 pages, 5 figures, and Supplementary Materials

The measurement problem dates back to the dawn of quantum mechanics. Here, we measure a quantum dot electron spin qubit through off-resonant coupling with thousands of redundant nuclear spin ancillae. We show that the link from quantum to classical can be made without any "wavefunction collapse", in agreement with the Quantum Darwinism concept. Large ancilla redundancy allows for single-shot readout with high fidelity $\approx99.85\%$. Repeated measurements enable heralded initialization of the qubit and probing of the equilibrium electron spin dynamics. Quantum jumps are observed and attributed to burst-like fluctuations in a thermally populated phonon bath.

Magnetic noise of atomic nuclear spins is a major problem for solid state spin qubits. Highly-polarized nuclei would not only overcome this obstacle, but also make nuclear spins a useful quantum information resource. However, achieving sufficiently high nuclear polarizations has remained an evasive goal. Here we implement a nuclear spin polarization protocol which combines strong optical pumping and fast electron tunneling. Polarizations well above 95% are generated in GaAs semiconductor quantum dots on a timescale of 1 minute. The technique is compatible with standard quantum dot device designs, where highly-polarized nuclear spins can simplify implementations of quantum bits and memories, as well as offer a testbed for studies of many-body quantum dynamics and magnetism.

A quantum-light source that delivers photons with a high brightness and a high degree of entanglement is fundamental for the development of efficient entanglement-based quantum-key distribution systems. Among all possible candidates, epitaxial quantum dots are currently emerging as one of the brightest sources of highly entangled photons. However, the optimization of both brightness and entanglement currently requires different technologies that are difficult to combine in a scalable manner. In this work, we overcome this challenge by developing a novel device consisting of a quantum dot embedded in a circular Bragg resonator, in turn, integrated onto a micromachined piezoelectric actuator. The resonator engineers the light-matter interaction to empower extraction efficiencies up to 0.69(4). Simultaneously, the actuator manipulates strain fields that tune the quantum dot for the generation of entangled photons with corrected fidelities to a maximally entangled state up to 0.96(1). This hybrid technology has the potential to overcome the limitations of the key rates that plague QD-based entangled sources for entanglement-based quantum key distribution and entanglement-based quantum networks.

Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton-exciton cascade in GaAs quantum dots at temperatures up to 65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures., Comment: 12 pages, 3 figures, supplemental material

The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution in inhomogeneously polarized many-body systems such as nuclear spin lattices. The central spin of a localized electron alters nuclear spin diffusion in a way that is still poorly understood. In contrast to previous predictions, we show experimentally that in GaAs/AlGaAs quantum dots the electron spin accelerates nuclear spin diffusion, without forming any Knight field gradient barrier. Such acceleration is present even at high magnetic fields, which we explain as a result of electron spin-flip fluctuations. Diffusion-limited nuclear spin lifetimes range between 1 and 10 s, providing plenty of room for recent proposals seeking to store and process quantum information using quantum dot nuclear spins.

Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matched GaAs-AlGaAs quantum dot devices prolongs the electron spin coherence by nearly two orders of magnitude, beyond 0.113(3) ms. To do this, we leverage the 99.30(5)% fidelity of our optical pi-pulse gates to implement dynamical decoupling. We vary the number of decoupling pulses up to N = 81 and find a coherence time scaling of N^{0.75(2)}. This scaling manifests an ideal refocusing of strong interactions between the electron and the nuclear-spin ensemble, holding the promise of lifetime-limited spin coherence. Our findings demonstrate that the most punishing material science challenge for such quantum-dot devices has a remedy, and constitute the basis for highly coherent spin-photon interfaces.

We report on a multi-photon source based on active demultiplexing of single photons emitted from a resonantly excited GaAs quantum dot. Active temporal-to-spatial mode demultipexing is implemented via resonantly enhanced free-space electro-optic modulators, making it possible to route individual photons at high switching rates of 38 MHz. We demonstrate routing into four spatial modes with a high end-to-end efficiency of 79% and measure a four-photon coincidence rate of 0.17 Hz mostly limited by the single-photon source brightness and not by the efficiency of the demultiplexer itself. We use the demultiplexer to characterize the pairwise indistinguishability of consecutively emitted photons from the quantum dot with variable delay time., Comment: The supplementary material is included as ancillary file

Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity., Comment: 24 pages, 8 figures

This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication, such as entanglement swapping and quantum key distribution.

Entanglement-based quantum key distribution promises enhanced robustness against eavesdropping and compatibility with future quantum networks. Among other sources, semiconductor quantum dots can generate polarization-entangled photon pairs with near-unity entanglement fidelity and a multi-photon emission probability close to zero even at maximum brightness. These properties have been demonstrated under resonant two-photon excitation (TPE) and at operation temperatures between 4 and 8 K. However, source blinking is often reported under TPE conditions, limiting the maximum achievable photon rate. In addition, operation temperatures reachable with compact cryo-coolers could facilitate the widespread deployment of quantum dots, e.g. in satellite-based quantum communication. Here we demonstrate blinking-free emission of highly entangled photon pairs from GaAs quantum dots embedded in a p-i-n diode. High fidelity entanglement persists at temperatures of at least 20 K, which we use to implement fiber-based quantum key distribution between two building with an average key rate of 55 bits/s and a qubit error rate of 8.4%. We are confident that by combining electrical control with already demonstrated photonic and strain engineering, quantum dots will keep approaching the ideal source of entangled photons for real world applications.

We conduct a combined experimental and theoretical study of the quantum-confined Stark effect in GaAs/AlGaAs quantum dots obtained with the local droplet etching method. In the experiment, we probe the permanent electric dipole and polarizability of neutral and positively charged excitons weakly confined in GaAs quantum dots by measuring their light emission under the influence of a variable electric field applied along the growth direction. Calculations based on the configuration-interaction method show excellent quantitative agreement with the experiment and allow us to elucidate the role of Coulomb interactions among the confined particles and -- even more importantly -- of electronic correlation effects on the Stark shifts. Moreover, we show how the electric field alters properties such as built-in dipole, binding energy, and heavy-light hole mixing of multiparticle complexes in weakly confining systems, underlining the deficiencies of commonly used models for the quantum-confined Stark effect.

State-of-the-art quantum key distribution systems are based on the BB84 protocol and single photons generated by lasers. These implementations suffer from range limitations and security loopholes, which require expensive adaptation. The use of polarization entangled photon pairs substantially alleviates the security threads while allowing for basically arbitrary transmission distances when embedded in quantum repeater schemes. Semiconductor quantum dots are capable of emitting highly entangled photon pairs with ultra-low multi-pair emission probability even at maximum brightness. Here we report on the first implementation of the BBM92 protocol using a quantum dot source with an entanglement fidelity as high as 0.97(1). For a proof of principle, the key generation is performed between two buildings, connected by 350 metre long fiber, resulting in an average key rate of 135 bits/s and a qubit error rate of 0.019 over a time span of 13 hours, without resorting to time- or frequency-filtering techniques. Our work demonstrates the viability of quantum dots as light sources for entanglement-based quantum key distribution and quantum networks. By embedding them in state-of-the-art photonic structures, key generation rates in the Gbit/s range are at reach., Comment: 7 pages, 2 figures