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The combined effect of electrical stimulation and cisplatin administration on HeLa cells was investigated. The combination of electric potentials (-0.5 V to 0.5 V) with 10-Hz frequency and 1000 ng/mL cisplatin decreased cancer cell viability by 32% and was more effective than either treatment given alone. Combined treatment with cisplatin and electrical stimulation also increased the number of apoptotic cells. It is shown that the efficacy of cisplatin was enhanced in electrically stimulated HeLa cells, and the addition of electrical stimulation amplified the chemotherapeutic effect of cisplatin in cervical cancer cells.

29th European Photovoltaic Solar Energy Conference and Exhibition; 1084-1086, Laser doping process is able to fabricate high efficiency silicon solar cell structures without photolithography processes in atmosphere at room temperature. P-type Cz silicon solar cells lead to a reduction of conversion efficiency under illumination because boron and oxygen are -the major components of the underlying metastable Cz-specific defect. Therefore we fabricated solar call structures with n-type Fz silicon wafer in order to avoid the boron-oxygen related light-induced degradation. Also, in conventional doping precursor such as borosilicate glass (BSG) under the laser illumination, no absorption in the precursor layer and heat transfer via vague interfaces between silicon substrate and precursor layer causes unreliable results. On the other hand, direct absorption in precursor layer containing silicon nano ink bring direct mixing of dopant atoms and molten silicon substrate which realize high controllability of doping depth and concentration.

29th European Photovoltaic Solar Energy Conference and Exhibition; 1424-1426, Selective emitter structure leads to improve the solar cell efficiency by resolving the issue of trade-off between front doping and metallization. Laser doping is much attractive choice to fabricate selective emitter with simple additional step in low-cost at high through-put. The present work focuses on reduction of emitter leak current by laser doping using spin-on dopant source for textured n-type c-Si solar cells. Nd:YAG second harmonic wave laser (355 nm) was used for selective emitter formation. The surface dopant concentration measured by SIMS was increased by redistribution of boron atoms from boron rich layer (BRL) after additional laser doping. The surface texture formations after laser irradiation were almost completely preserved from smoothing, which was contributed by high adhesiveness and uniform coating of dopant source using poly-boron film (PBF®). The formation of selective emitter by laser doping contributed to reduction of reverse saturation current. The photovoltaic characteristics, Voc and F.F. were improved by formation of selective emitter. Consequently, these improvements of photovoltaic characteristics led to rising of solar cell efficiency about 3 %.

Electrical stimulation has various effects on cellular functions. We previously reported a combined effect of electrical stimulation and cisplatin treatment on HeLa cell death. The present study investigates the signaling pathway behind this phenomenon. Decreased viability of HeLa cells after electrical stimulation plus cisplatin treatment was suppressed by addition of the caspase inhibitor zVAD-FMK. This showed that HeLa cell death induced by combining electrical stimulation and cisplatin treatment was caused by increased caspase activity. Moreover, mitochondrial cytochrome c release and c-Jun N-terminal kinases (JNK) activities were enhanced by this combined treatment. These results indicated that combined treatment-induced apoptosis was caused by increasing caspase activity via the JNK signal pathway.