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Distinguishing between different handedness of circularly polarized light can be a useful additional property in photodetector technology. The integration of this functionality can be obtained either using optical media with chiro‐optical response, or by the employment of chiral metamaterials. In this work, 3D chiral metasurfaces composed by a 3D helix array, are integrated onto a micrometer‐scale silicon‐based transistor and act as optical filter for circularly polarized light. The technological process involving focused electron beam induced deposition for helix manufacturing is carefully studied with respect to its effect on the phototransistor response. The integrated system exhibits a photoresponse which is dependent on the circular polarization, with a promising asymmetry factor in the visible spectral range. The proposed technology can pave the way for novel potential applications in diverse areas such as materials science, bioimaging, and quantum computing. [ABSTRACT FROM AUTHOR]

MoS2 is a two-dimensional layered transition metal dichalcogenide with unique electronic and optical properties. The fabrication of ultrathin MoS2 is vitally important, since interlayer interactions in its ultrathin varieties will become thickness-dependent, providing thickness-governed tunability and diverse applications of those properties. Unlike with a number of studies that have reported detailed information on direct bandgap emission from MoS2 monolayers, reliable experimental evidence for thickness-induced evolution or transformation of the indirect bandgap remains scarce. Here, the sulfurization of MoO3 thin films with nominal thicknesses of 30 nm, 5 nm and 3 nm was performed. All sulfurized samples were examined at room temperature with spectroscopic ellipsometry and photoluminescence spectroscopy to obtain information about their dielectric function and edge emission spectra. This investigation unveiled an indirect-to-indirect crossover between the transitions, associated with two different Λ and K valleys of the MoS2 conduction band, by thinning its thickness down to a few layers. [ABSTRACT FROM AUTHOR]

The aim is to examine the spin‐polarized electronic band structures, the density of states (DOS) as well as magnetism of CoxZn1−xSe and NixZn1−xSe diluted magnetic semiconductors (DMSs) in the ferromagnetic (FM) phase, and with 12.5% and 6.25% concentrations of impurity. The calculations are implemented by the recent ab initio norm‐conserving FHI pseudopotential method within the local spin density approximation and Hubbard U (LSDA + U) method. The analysis of the total DOS (TDOS) curves shows the half‐metallic FM character for Ni‐doped and (Co, Ni)‐co‐doped ZnSe with a half‐metallic bandgap of 1 ÷ 1.6 eV. The exchange splittings produced by dopant d states are determined: for the CoxZn1−xSe, it is obtained that the effective potential for the majority spin is more attractive than for the minority spin. The total magnetic moments of Co‐doped, Ni‐doped, and co‐doped ZnSe DMSs are found to be equal to 3, 4, and 5.0 μB, respectively. The Curie temperature of NixZn1−xSe is higher than room temperature and this is half‐metallic ferromagnetic (HMFM) material for spintronics application. Co‐doped ZnSe is an excellent choice for electronic devices owing to its below Curie temperature. [ABSTRACT FROM AUTHOR]

Submicron thin films of Bi2Te2,7Se0,3 solid solution is synthesized by thermal vacuum evaporation. The films are then subjected to after-growth vacuum annealing and characterized using X-ray diffraction and confocal laser microscopy techniques. Electron transport in the synthesized films is studied over the temperature range of 1.4-300 K at magnetic fields up to 8 T. Electron localization due to electron-electron interaction, along with weak anti-localization effect at weak magnetic fields and temperatures below 8 K is observed. The latter effect is commonly encountered in thin films of topological insulators grown by molecular beam epitaxy and has therefore been ascribed to the manifestation of the topological surface states. Finally, phase coherence length is estimated. [ABSTRACT FROM AUTHOR]

Highlights from the article: Synthesis, Powder X-Ray Diffraction, and Ab Initio Study of TlInSe2: Analysis of Its Thermoelectric Properties Seyidov, and co-workers report first-principles calculations of the Seebeck coefficient in TlInSe SB 2 sb . The hybridization of Se and Tl orbitals near the top of valence band as well as Se, Tl, and In orbitals in conduction band may lead to giant values of the Seebeck coefficient as it is reported in literature.

MoS 2 is a two-dimensional layered transition metal dichalcogenide with unique electronic and optical properties. The fabrication of ultrathin MoS 2 is vitally important, since interlayer interactions in its ultrathin varieties will become thickness-dependent, providing thickness-governed tunability and diverse applications of those properties. Unlike with a number of studies that have reported detailed information on direct bandgap emission from MoS 2 monolayers, reliable experimental evidence for thickness-induced evolution or transformation of the indirect bandgap remains scarce. Here, the sulfurization of MoO 3 thin films with nominal thicknesses of 30 nm, 5 nm and 3 nm was performed. All sulfurized samples were examined at room temperature with spectroscopic ellipsometry and photoluminescence spectroscopy to obtain information about their dielectric function and edge emission spectra. This investigation unveiled an indirect-to-indirect crossover between the transitions, associated with two different Λ and K valleys of the MoS 2 conduction band, by thinning its thickness down to a few layers.