1. Effect of Etching Methods on Dielectric Losses in Transmons
- Author
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Chudakova, T. A., Mazhorin, G. S., Trofimov, I. V., Rudenko, N. Yu., Mumlyakov, A. M., Kazmina, A. S., Egorova, E. Yu., Gladilovich, P. A., Chichkov, M. V., Maleeva, N. A., Tarkhov, M. A., and Chichkov, V. I.
- Subjects
Quantum Physics ,Condensed Matter - Superconductivity - Abstract
Superconducting qubits are considered as a promising platform for implementing a fault tolerant quantum computing. However, surface defects of superconductors and the substrate leading to qubit state decoherence and fluctuations in qubit parameters constitute a significant problem. The amount and type of defects depend both on the chip materials and fabrication procedure. In this work, transmons produced by two different methods of aluminum etching: wet etching in a solution of weak acids and dry etching using a chlorine-based plasma are experimentally studied. The relaxation and coherence times for dry-etched qubits are more than twice as long as those for wet-etched ones. Additionally, the analysis of time fluctuations of qubit frequencies and relaxation times, which is an effective method to identify the dominant dielectric loss mechanisms, indicates a significantly lower impact of two-level systems in the dry-etched qubits compared to the wet-etched ones., Comment: 7 pages, 6 figures
- Published
- 2024
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