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This Perspective focuses on experimental and theoretical aspects of positron annihilation spectroscopy. This set of methods is highly suitable for identifying and quantifying vacancy-type defects in semiconductors and also allows for analyzing their physics characteristics. We present selected examples from the past decade, where the methods have been used for obtaining timely and useful insights into the defect-controlled phenomenon in narrow-gap (Ge, GaSb) and wide-gap (III-nitride, oxide) semiconductors. We also discuss possible future developments that may allow more detailed studies in novel semiconductor materials and devices with ever more complex lattice structures. [ABSTRACT FROM AUTHOR]

Owing to their excellent radiation tolerance, some of the high-entropy alloys (HEAs) are considered as potential candidates for structural materials in extreme conditions. In order to shed light on the early-stage irradiation damage in HEAs, we performed positron annihilation spectroscopy on hydrogen implanted equiatomic FeMnNiCoCr and interstitial carbon-containing FeMnNiCoCr HEAs. We reveal primary damage as monovacancies in low dose irradiated HEAs. The enhancement of Frenkel pair recombination by C addition is observed in C-containing HEAs. In addition, the C interstitials suppress the vacancy cluster formation in high dose irradiated HEAs. [ABSTRACT FROM AUTHOR]

We present a computational scheme for orbital-free density functional theory (OFDFT) that simultaneously provides access to all-electron values and preserves the OFDFT linear scaling as a function of the system size. Using the projector augmented-wave method (PAW) in combination with real-space methods, we overcome some obstacles faced by other available implementation schemes. Specifically, the advantages of using the PAW method are twofold. First, PAW reproduces all-electron values offering freedom in adjusting the convergence parameters and the atomic setups allow tuning the numerical accuracy per element. Second, PAW can provide a solution to some of the convergence problems exhibited in other OFDFT implementations based on Kohn-Sham (KS) codes. Using PAW and real-space methods, our orbital-free results agree with the reference all-electron values with a mean absolute error of 10 meV and the number of iterations required by the self-consistent cycle is comparable to the KS method. The comparison of all-electron and pseudopotential bulk modulus and lattice constant reveal an enormous difference, demonstrating that in order to assess the performance of OFDFT functionals it is necessary to use implementations that obtain all-electron values. The proposed combination of methods is the most promising route currently available. We finally show that a parametrized kinetic energy functional can give lattice constants and bulk moduli comparable in accuracy to those obtained by the KS PBE method, exemplified with the case of diamond. [ABSTRACT FROM AUTHOR]

We present a systematic study of the positron lifetime as a function of measurement temperature in strontium titanate ( SrTiO 3) single crystals grown in different conditions and by different synthesis methods. We combine our experimental results with state-of-the-art theoretical calculations of positron annihilation parameters. We find that the essentially omnipresent 180–190 ps lifetime component is most likely the Ti Sr antisite defect, possibly coupled with one or more oxygen vacancies, supporting the importance of the Ti Sr antisite related defects in SrTiO 3. [ABSTRACT FROM AUTHOR]

The correlated motion of a positron surrounded by electrons is a fundamental many-body problem. We approach this by modeling the momentum density of annihilating electron-positron pairs using the framework of reduced density matrices, natural orbitals, and natural geminals (electron-positron pair wave functions) of the quantum theory of many-particle systems. We find that an expression based on the natural geminals provides an exact, unique, and compact expression for the momentum density. The natural geminals can be used to define and to determine enhancement factors for enhancement models going beyond the independent-particle model for a better understanding of the results of positron annihilation experiments. [ABSTRACT FROM AUTHOR]

Results of first principles calculations for two types of vicinals of Pd(1 1 1) and Pd(1 1 0), with 3-atom wide terraces, are reported. We discuss the structure of the stepped surfaces, and the preferred adsorption sites and adsorption energies for S. We show that the adsorbate can have considerable effect on the relaxations and registry of substrate atoms and that the effect is most pronounced for Pd(3 2 0) which also displays the strongest adsorption energies for S. [Copyright &y& Elsevier]

A preface to the special topic "Defects in Semiconductors" is presented.

Our Compton profile measurements of Ti and TiH2 using readily available hard X-ray radiation at 27.5 keV, detected by both a Hitachi Vortex silicon-drift detector and a high-resolution superconducting transition-edge sensor array, are found to be in excellent accord with state-of-the-art density functional theory based calculations. The spherically averaged difference between the Compton profiles of TiH2 and Ti is well described by an inverted parabola, supporting an itinerant behavior of the electron gas screening the protons in the Ti matrix. Our experimental approach, validated by two different detectors, extends the applicability of Compton scattering technique to the readily accessible hard x-ray regime (below 30 keV). Our study suggests possibilities for experiments at low-flux bending magnet synchrotron beamlines and paves the way for the development of tabletop Compton experiments with x-ray tubes. [ABSTRACT FROM AUTHOR]

Positron annihilation spectroscopy in the Doppler and coincidence Doppler mode was applied on Ge 1 − x Sn x epitaxial layers, grown by chemical vapor deposition with different total As concentrations (∼ 10 19 – 10 21 cm − 3 ), high active As concentrations (∼ 10 19 cm − 3 ), and similar Sn concentrations (5.9%–6.4%). Positron traps are identified as mono-vacancy complexes. Vacancy-As complexes, V-As i , formed during the growth were studied to deepen the understanding of the electrical passivation of the Ge 1 − x Sn x :As epilayers. Larger mono-vacancy complexes, V-As i (i ≥ 2), are formed as the As doping increases. The total As concentration shows a significant impact on the saturation of the number of As atoms (i = 4) around the vacancies in the sample epilayers. The presence of V-As i complexes decreases the dopant activation in the Ge 1 − x Sn x :As epilayers. Furthermore, the presence of Sn failed to hinder the formation of larger V-As i complexes and thus failed to reduce the donor-deactivation. [ABSTRACT FROM AUTHOR]

Tungsten is considered to be used in the future fusion reactors as plasma-facing material. In such extreme environments, defects are induced in materials that modify their macroscopic properties such as the mechanical ones. It is of paramount importance to be able to determine concentration and size of the vacancy defects, from the mono vacancy to the large cavities, to validate the models developed to predict the evolution of the microstructure of irradiated materials. Positrons are very useful non-destructive probes that can characterize vacancy-type defects in materials. We present a combined experimental and theoretical study on detecting and estimating the sizes of vacancy clusters that are invisible with electron microscopy in tungsten, using positron annihilation spectroscopy. We here model the positron annihilation in the tungsten lattice and in vacancy-type defects using state-of-the-art first principles methodology. The Doppler broadening spectra and positron lifetimes in tungsten are calculated with two-component density functional theory with local density approximation and weighted density approximation. Our calculations are in excellent agreement with our experimental results. We show that the sizes of vacancy clusters in tungsten can be well estimated by combining both positron lifetimes and Doppler broadening spectra. We also determine the limit of validity of the canonical calculation method, which here is shown to fail when the vacancy clusters grow beyond their nucleation stage. This work is a first step needed to better interpret the measured positron annihilation characteristics (Doppler and lifetime) in tungsten and then extract quantitative data on small vacancy defects required to improve the understanding of early-stage vacancy defect evolution in tungsten. The method used in this paper could be used to study other metallic materials. [ABSTRACT FROM AUTHOR]

We consider electronic exchange and correlation effects in density-functional calculations of two-dimensional systems. Starting from wave-function calculations of total energies and electron densities of inhomogeneous model systems, we derive corresponding exchange-correlation potentials and energies. We compare these with predictions of the local-spin-density approximation and discuss its accuracy. Our data will be useful as reference data in testing, comparing, and parametrizing exchange and correlation functionals for two-dimensional electronic systems. [ABSTRACT FROM AUTHOR]

We examined the vacancy trapping proficiency of Sn and P atoms in germanium using positron annihilation spectroscopy measurements, sensitive to the open-volume defects. Epitaxial Ge 1 − x Sn x films were grown by chemical vapor deposition with different P concentrations in the ∼ 3.0 × 10 19 – 1.5 × 10 20 cm − 3 range. We corroborate our findings with first principles simulations. Codoping of Ge with a Sn concentration of up to 9% is not an efficient method to suppress the free vacancy concentration and the formation of larger phosphorus–vacancy complexes. Experimental results confirm an increase in the number of P atoms around the monovacancy with P-doping, leading to dopant deactivation in epitaxial germanium–tin layers with similar Sn content. Vice versa, no impact on the improvement of maximum achieved P activation in Ge with increasing Sn-doping has been observed. Theoretical calculations also confirm that P n -V (vacancy) complexes are energetically more stable than the corresponding Sn m P n -V and Sn m -V defect structures with the same number of alien atoms (Sn or P) around the monovacancy. The strong attraction of vacancies to the phosphorus atoms remains the dominant dopant deactivation mechanism in Ge as well as in Ge 1 − x Sn x. [ABSTRACT FROM AUTHOR]

The E centers (dopant-vacancy pairs) play a significant role in dopant deactivation in semiconductors. In order to gain insight into dopant-defect interactions during epitaxial growth of in situ phosphorus doped Ge, positron annihilation spectroscopy, which is sensitive to open-volume defects, was performed on Ge layers grown by chemical vapor deposition with different concentrations of phosphorus (∼ 1 × 10 18 – 1 × 10 20 cm − 3 ). Experimental results supported by first-principles calculations based on the two component density-functional theory gave evidence for the existence of mono-vacancies decorated by several phosphorus atoms as the dominant defect type in the epitaxial Ge. The concentration of vacancies increases with the amount of P-doping. The number of P atoms around the vacancy also increases, depending on the P concentration. The evolution of P n –V clusters in Ge contributes significantly to the dopant deactivation. [ABSTRACT FROM AUTHOR]

We present evidence of homogenization of atomic diffusion properties caused by C and N interstitials in an equiatomic single-phase high entropy alloy (FeMnNiCoCr). This phenomenon is manifested by an unexpected interstitial-induced reduction and narrowing of the directly experimentally determined migration barrier distribution of mono-vacancy defects introduced by particle irradiation. Our observation by positron annihilation spectroscopy is explained by state-of-the-art theoretical calculations that predict preferential localization of C/N interstitials in regions rich in Mn and Cr, leading to a narrowing and reduction of the mono-vacancy size distribution in the random alloy. This phenomenon is likely to have a significant impact on the mechanical behavior under irradiation, as the local variations in elemental motion have a profound effect on the solute strengthening in high entropy alloys. [Display omitted] [ABSTRACT FROM AUTHOR]

We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors. [ABSTRACT FROM AUTHOR]

Topological insulators are attracting considerable interest due to their potential for technological applications and as platforms for exploring wide-ranging fundamental science questions. In order to exploit, fine-tune, control, and manipulate the topological surface states, spectroscopic tools which can effectively probe their properties are of key importance. Here, we demonstrate that positrons provide a sensitive probe for topological states and that the associated annihilation spectrum provides a technique for characterizing these states. Firm experimental evidence for the existence of a positron surface state near Bi2Te2Se with a binding energy of Eb=2.7±0.2eV is presented and is confirmed by first-principles calculations. Additionally, the simulations predict a significant signal originating from annihilation with the topological surface states and show the feasibility to detect their spin texture through the use of spin-polarized positron beams. [ABSTRACT FROM AUTHOR]