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365 results on '"Maiti, C. K."'

3. Toward Ultimate Scaling: From FinFETs to Nanosheet Transistors

Author

Dash, T. P., Mohapatra, E., Das, Sanghamitra, Choudhury, S., Maiti, C. K., Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Sharma, Renu, editor, Mishra, Manohar, editor, Nayak, Janmenjoy, editor, Naik, Bighnaraj, editor, and Pelusi, Danilo, editor

Published
2021
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4. Atomistic Level Process to Device Simulation of GaNFET Using TNL TCAD Tools

Author

Nanda, R. K., Mohapatra, E., Dash, T. P., Saxena, P., Srivastava, P., Trigutnayat, R., Maiti, C. K., Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Pradhan, Gayadhar, editor, Morris, Stella, editor, and Nayak, Niranjan, editor

Published
2020
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5. Modeling and Performance Analysis of n-FinFETs: A Comparative Study

Author

Jena, J., Dash, T. P., Mohapatra, E., Das, S., Nanda, J., Maiti, C. K., Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Pradhan, Gayadhar, editor, Morris, Stella, editor, and Nayak, Niranjan, editor

Published
2020
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6. Performance Analysis of Si-Channel Nanosheet FETs with Strained SiGe Source/Drain Stressors

Author

Mohapatra, E., Dash, T. P., Jena, J., Das, S., Nanda, J., Maiti, C. K., Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Pradhan, Gayadhar, editor, Morris, Stella, editor, and Nayak, Niranjan, editor

Published
2020
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7. Stress Profile Analysis in n-FinFET Devices

Author

Dash, T. P., Das, S., Dey, S., Jena, J., Maiti, C. K., Kacprzyk, Janusz, Series Editor, Pal, Nikhil R., Advisory Editor, Bello Perez, Rafael, Advisory Editor, Corchado, Emilio S., Advisory Editor, Hagras, Hani, Advisory Editor, Kóczy, László T., Advisory Editor, Kreinovich, Vladik, Advisory Editor, Lin, Chin-Teng, Advisory Editor, Lu, Jie, Advisory Editor, Melin, Patricia, Advisory Editor, Nedjah, Nadia, Advisory Editor, Nguyen, Ngoc Thanh, Advisory Editor, Wang, Jun, Advisory Editor, Mandal, Jyotsna Kumar, editor, and Bhattacharya, Debika, editor

Published
2020
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8. Reduction of Self-heating effect in LDMOS devices

Author

Maiti, T. K. and Maiti, C. K.

Subjects
Computer Science - Emerging Technologies
Abstract

Isotopic purification of group IV elements leads to substantial increase in thermal conductivity due to reduced scattering of the phonons. Based on this concept, a simulation study is used to demonstrate the reduction of at least 25 oC in LDMOS average temperature., Comment: 17 pages, 5 figures

Published
2016

10. Study of Strained-Si/SiGe Channel p-MOSFETs Using TCAD

Author

Das, Sanghamitra, Dash, Tara Prasanna, Nanda, Rajib Kumar, Maiti, C. K., Angrisani, Leopoldo, Series editor, Arteaga, Marco, Series editor, Chakraborty, Samarjit, Series editor, Chen, Jiming, Series editor, Chen, Tan Kay, Series editor, Dillmann, Ruediger, Series editor, Duan, Haibin, Series editor, Ferrari, Gianluigi, Series editor, Ferre, Manuel, Series editor, Hirche, Sandra, Series editor, Jabbari, Faryar, Series editor, Kacprzyk, Janusz, Series editor, Khamis, Alaa, Series editor, Kroeger, Torsten, Series editor, Ming, Tan Cher, Series editor, Minker, Wolfgang, Series editor, Misra, Pradeep, Series editor, Möller, Sebastian, Series editor, Mukhopadhyay, Subhas Chandra, Series editor, Ning, Cun-Zheng, Series editor, Nishida, Toyoaki, Series editor, Panigrahi, Bijaya Ketan, Series editor, Pascucci, Federica, Series editor, Samad, Tariq, Series editor, Seng, Gan Woon, Series editor, Veiga, Germano, Series editor, Wu, Haitao, Series editor, Zhang, Junjie James, Series editor, and Nath, Vijay, editor

Published
2018
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24. A Computationally Efficient Skull Scraping Approach for Brain MR Image

Author

Sakhare Mahesh, K. Kavitha, Prasad Reddy P.V.G.D., Anshu Kumari, Mahapatra E., Das P S, Ma Jing, Wang Deya, Gaur Loveleen, Dash T.P., M. Hadi Enas, Srinivasa Rao T., Solanki Arun, Ambekar Wahid, Naga Srinivasu P., Batra Usha, Zhu Tianshun, B. Pathan Inayat, Tian Zhongjing, Jena J., Srinivas G., Maiti C K, Kang Meiling, Munir Ahamed Rabbani M., Atheeq C., L. Jasim Safa, Zhang Yingxia, Bi Haidan, Dey S., M. Setty Chitral, Saluja Shivani, M. R Rajeshwari, Wang Hongkai, and Ding Chengshi

Subjects
General Computer Science, Computer science, business.industry, 02 engineering and technology, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, Skull, 0302 clinical medicine, medicine.anatomical_structure, 0202 electrical engineering, electronic engineering, information engineering, medicine, 020201 artificial intelligence & image processing, Computer vision, Artificial intelligence, Mr images, business
Abstract

Background: In the process of volumetric evaluation of the damaged region in the human brain from a MR image it is very crucial to remove the non-brain tissue from the acquainted image. At times there is a chance during the process of assessing the damaged region through automated approaches might misinterpret the non-brain tissues like skull as damaged region due to their similar intensity features. So in order to address such issues all such artefacts. Objective: In order to mechanize an efficient approach that can effectively address the issue of removing the non-brain tissues with minimal computation effort and precise accuracy. It is very essential to keep the computational time to be as minimal as possible because the processes of skull removal is used in conjunction with segmentation algorithm, and if the skull scrapping approach has consumed a considerable amount of time, they it would impact the over segmentation and volume assessment time which is not advisable. Methods: In this paper a completely novel approach named Structural Augmentation has been proposed, that could efficiently remove the skull region from the MR image. The proposed approach has several phases that include applying of Hybridized Contra harmonic and Otsu AWBF filtering for noise removal and threshold approximation through Otsu based approach and constructing the bit map based on the approximated threshold. Morphological close operation followed by morphological open operation with reference to a structural element through the generated bitmap image. Results: The experiment are carry forwarded on a real time MR images of the patient at KGH hospital, Visakhapatnam and the images from open sources repositories like fmri. The experiment is conducted on the images of varied noise variance that are tabulated in the results and implementation section of the article. The accuracy of the proposed method has been evaluated through metrics like Accuracy, Sensitivity, Specificity through true positive, true negative, False Positive and False negative evaluations. And it is observed that the performance of the proposed algorithm seems to be reasonable good. Conclusion: The skull scrapping through structural Augmentation is computationally efficient when compared with other conventional approaches concerning both computational complexity and the accuracy that could be observed on experimentation. The Adaptive Weighted Bilateral Filter that acquire the weight value from the approximated contra harmonic mean will assist in efficient removal of poison noised by preserving the edge information and Otsu algorithm is used to determine the appropriate threshold value for constructing the bitmap image of the original MRI image which is efficient over the earlier mean based approach for estimating the threshold. Moreover, the efficiency of the proposed approach could be further improved by using customized structural elements and incorporating the fuzzy based assignments among the pixels that belong to brain tissue and skull effectively.

Published
2020
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27. Strain-Engineered MOSFETs

Author

Maiti, C. K. and Maiti, T. K.

Subjects
Technology & Engineering / Electronics / Microelectronics
Abstract

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.

Published
2012

48. Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers.

Author

Maiti, P P, Dash, Ajit, Guhathakurata, S, Das, S, BAG, Atanu, Dash, T P, Ahmad, G, MAITI, C K, and Mallik, S

Abstract

Thin HfTiOx high-k gate dielectric (Ti ~26.6%) has been sputter-deposited on strained Si0.81Ge0.19 heterolayers. The energy band discontinuities and interface properties were studied using X-ray photoelectron spectroscopy. The conduction band offset, and valance band offset between HfTiOx and Si0.81Ge0.19 were found to be 1.34 and 2.52 eV, respectively. Further, temperature-dependent (300–500 K) current density–voltage measurements (J–V) were utilized to explore the underlying leakage current conduction mechanism. The conductive dislocation and emission barrier heights at the hetero-interface have also been extracted from temperature-dependent J–V measurement. The barrier height of 1.22 to 2.02 eV for Schottky emission and 0.76 to 1.26 eV for Poole–Frenkel emission were estimated at the hetero-interface. To better understand the conduction mechanism between the hetero-interface and temperature-dependent J–V, a calibrated TCAD simulation was carried out. [ABSTRACT FROM AUTHOR]

Published
2022
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