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Negative and positive muon irradiation tests of static random access memories (SRAMs) were performed at Muon Science Innovation Channel (MuSIC) of Research Center for Nuclear Physics (RCNP), Osaka University. The muon-induced single event upset (SEU) cross sections for 65-nm bulk SRAMs were measured. The SRAM device was irradiated by the muon beams with average momenta ranging from 37.8 to 41.0 MeV/c at the beam exit. The incident muon fluence was measured using a one-by-one muon detection system with a plastic scintillator by taking advantage of the direct current (dc) muon beam and reliable absolute values of SEU cross sections were obtained. In addition to the measurement of the SEU cross sections, we measured muonic X-rays from the irradiated device to investigate the relation between the measured SEU cross section and the emission rate of muonic X-rays associated with the stopping position of the muons as a function of incident muon momentum. The result suggested that negative muons have a significant effect on SEUs by the emission of secondary light ions via negative muon capture reaction when negative muons stop near sensitive volumes (SVs) in SRAMs. [ABSTRACT FROM AUTHOR]