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In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations.

An improved compact model of high-voltage laterally diffused MOS (LDMOS) transistors valid over a wide temperature range including cryogenic is presented. The existing BSIM-BULK HV compact model is improved to include carrier freeze-out and field-assisted ionization models, which are key for the HV devices. In addition, temperature dependence of mobility, flat-band voltage, and saturation velocity models are also improved for application to cryogenic temperatures. The proposed model is implemented within the framework of the BSIM-BULK HV compact model and shows excellent capability in modeling experimental LDMOS transistor data for temperatures between 300 and 77 K.