146 results on '"Ma, Ziguang"'
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2. Relation of V/III ratio of AlN interlayer with the polarity of nitride.
3. The flexible LED fabrication by transferring epitaxial film onto PET
4. Characterization of edge dislocation density through X-ray diffraction rocking curves
5. Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes
6. Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate
7. Design of overload test system for electromagnetic rail gun
8. Anomalous enhancement of the absorption coefficient of GaAs in a p-n junction
9. Ni-pattern guided GaN nanowire-array humidity sensor with high sensitivity enhanced by UV photoexcitation
10. Alleviation of parasitic reactions for III-nitride epitaxy in MOCVD with a spatial separated source delivery method by controlling the main reaction type
11. Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells
12. Enhanced performance of flexible LED by low-temperature annealing
13. Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure
14. Enhanced performance of flexible LED by low-temperature annealing.
15. A novel method to reduce the period limitation in laser interference lithography
16. Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer
17. A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD
18. N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
19. Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization
20. Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure.
21. Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer
22. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
23. Improving the Performance of Solar Cells Under Non-Perpendicular Incidence by Photonic Crystal
24. Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization
25. The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films
26. The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD
27. Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction
28. Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation
29. Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes
30. Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals
31. Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
32. Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current
33. The influence of excessive H2 during barrier growth on InGaN light-emitting diodes
34. Fabrication, structural and optical properties of a virtual GeSi template by Ge filling the porous Si prepared by EC etching
35. Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography
36. Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction*
37. Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction
38. Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate
39. Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates
40. The influence of excessive H2 during barrier growth on InGaN light-emitting diodes.
41. Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate
42. Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p–n junction
43. Effect of SU-8 Passivation Layer Induced Stress on the Performance of GaSb Diode
44. Rectifying behavior in the GaN/graded-AlxGa1−xN/GaN double heterojunction structure
45. Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures
46. Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector
47. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
48. 1.0 eV GaAs based InAs quantum dot solar cells
49. The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
50. Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate.
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