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4. High-performance cavity-enhanced quantum memory with warm atomic cell

Author

Ma, Lixia, Lei, Xing, Yan, Jieli, Li, Ruiyang, Chai, Ting, Yan, Zhihui, Jia, Xiaojun, Xie, Changde, and Peng, Kunchi

Subjects
Quantum Physics
Abstract

High-performance quantum memory for quantized states of light is a prerequisite building block of quantum information technology. Despite great progresses of optical quantum memories based on interactions of light and atoms, physical features of these memories still cannot satisfy requirements for applications in practical quantum information systems, since all of them suffer from trade-off between memory efficiency and excess noise. Here, we report a high-performance cavity-enhanced electromagnetically-induced-transparency memory with warm atomic cell in which a scheme of optimizing the spatial and temporal modes based on the time-reversal approach is applied. The memory efficiency up to 67% is directly measured and a noise level close to quantum noise limit is simultaneously reached. It has been experimentally demonstrated that the average fidelities for a set of input coherent states with different phases and amplitudes within a Gaussian distribution have exceeded the classical benchmark fidelities. Thus the realized quantum memory platform has been capable of preserving quantized optical states, and is ready to be applied in quantum information systems, such as distributed quantum logic gates and quantum-enhanced atomic magnetometry., Comment: 15 pages,2 figures

Published
2022
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43. Strong Electronic Interaction in High-Entropy Oxide Enhances Oxygen Evolution Reaction

Author

Huang, Luo, Ma, Lixia, Xu, Jing, Wei, Baoqiang, Xue, Yanzhong, Zhang, Nan, Zhou, Xiaojie, Yang, Jie, Liu, Zong-Huai, and Jiang, Ruibin

Abstract

High-entropy oxides are a new type of material with significant application potential. However, the lack of a universal HEO preparation method severely limits the property study and application of HEOs. Herein, we report a universal approach of spray pyrolysis for the preparation of various HEOs and study the electrocatalytic performance of HEOs toward the oxygen evolution reaction. FeCoNiMoWOxHEO exhibits an overpotential of 281 mV at 10 mA cm–2and a Tafel slope of 34.5 mV dec–1, which are far superior to those of the corresponding medium-entropy oxide and low-entropy oxide. It is found that the high entropy of the HEO greatly strengthens the interaction between Fe and Mo/W and produces abundant oxygen vacancies (OVs) around Mo and W. This work not only provides a universal preparation method for HEOs but also deepens our understanding of OER catalytic activity of HEOs.

Published
2024
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49. Collinearity Analysis and High-Density Genetic Mapping of the Wheat Powdery Mildew Resistance Gene Pm40 in PI 672538

Author

Zhong, Shengfu, Ma, Lixia, Fatima, Syeda Akash, Yang, Jiezhi, Chen, Wanquan, Liu, Taiguo, Hu, Yuting, Li, Qing, Guo, Jingwei, Zhang, Min, Lei, Li, Li, Xin, Tang, Shengwen, and Luo, Peigao

Subjects
Agricultural, Veterinary and Food Sciences, Plant Biology, Biological Sciences, Genetics, Biotechnology, Human Genome, Brachypodium, Chromosome Mapping, Chromosomes, Plant, Comparative Genomic Hybridization, Disease Resistance, Expressed Sequence Tags, Genetic Linkage, Genotype, Microsatellite Repeats, Oryza, Plant Diseases, Plant Proteins, Sorghum, Triticum, General Science & Technology
Abstract

The wheat powdery mildew resistance gene Pm40, which is located on chromosomal arm 7BS, is effective against nearly all prevalent races of Blumeria graminis f. sp tritici (Bgt) in China and is carried by the common wheat germplasm PI 672538. A set of the F1, F2 and F2:3 populations from the cross of the resistant PI 672538 with the susceptible line L1034 were used to conduct genetic analysis of powdery mildew resistance and construct a high-density linkage map of the Pm40 gene. We constructed a high-density linkage genetic map with a total length of 6.18 cM and average spacing between markers of 0.48 cM.Pm40 is flanked by Xwmc335 and BF291338 at genetic distances of 0.58 cM and 0.26 cM, respectively, in deletion bin C-7BS-1-0.27. Comparative genomic analysis based on EST-STS markers established a high level of collinearity of the Pm40 genomic region with a 1.09-Mbp genomic region on Brachypodium chromosome 3, a 1.16-Mbp genomic region on rice chromosome 8, and a 1.62-Mbp genomic region on sorghum chromosome 7. We further anchored the Pm40 target intervals to the wheat genome sequence. A putative linear index of 85 wheat contigs containing 97 genes on 7BS was constructed. In total, 9 genes could be considered as candidates for the resistances to powdery mildew in the target genomic regions, which encoded proteins that were involved in the plant defense and response to pathogen attack. These results will facilitate the development of new markers for map-based cloning and marker-assisted selection of Pm40 in wheat breeding programs.

Published
2016

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