325 results on '"MAKIHARA, Katsunori"'
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2. Alignment control of self-assembling Si quantum dots
3. Self-assembling mechanism of Si-QDs on thermally grown SiO2
4. Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties
5. Self-assembling formation of Si-QDs on SiO2 line patterns
6. Formation of β-FeSi2 NDs by SiH4-exposure to Fe-NDs
7. Self-assembling formation of Si-QDs on SiO2 line patterns.
8. (Invited) Formation and Characterization of Fe-Silicide Nanodots for Optoelectronic Application
9. Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis
10. Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy
11. Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots
12. Characterization of magnesium channeled implantation layers in GaN(0001)
13. Evaluation of chemical structure and Si segregation of Al/Si(111)
14. Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure
15. Formation of ultra-thin NiGe film with single crystalline phase and smooth surface
16. Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy
17. Effects of Cl passivation on Al2O3/GaN interface properties
18. (Digital Presentation) Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots
19. Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
20. Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots
21. Evaluation of charge trapping properties of microcrystalline germanium thin films by Kelvin force microscopy
22. Study on silicidation reaction of Fe nanodots with SiH4
23. Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique
24. Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure
25. High-density formation of Ge quantum dots on SiO 2
26. Segregation control for ultrathin Ge layer in Al/Ge(111) system
27. Effects of Cl passivation on Al2O3/GaN interface properties.
28. Formation and characterization of hybrid nanodot stack structure for floating gate application
29. (Invited) Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots
30. Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
31. Effect of substrate temperature on plasma-enhanced self-assembling formation of high density FePt nanodots
32. Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristics
33. Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH 4
34. Study of dot size effect on electron emission from Si-QDs multiple-stacked structures
35. Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal
36. Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core
37. Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe
38. Decay characteristics of electronic charged states of Si quantum dots as evaluated by an AFM/Kelvin probe technique
39. Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode
40. Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe
41. Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing
42. Characterization of photoluminescence from Si quantum dots with B δ-doped Ge core
43. Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy
44. Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure
45. Complex dielectric function of Si oxide as evaluated from photoemission measurements
46. Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface
47. High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2
48. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/ Kelvin Probe Technique
49. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots
50. Study of Charged States of Si Quantum Dots with Ge Core
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