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This study presents the detailed characterization of a magnetron-based Ar–N2 plasma discharge used to sputter a liquid Ga target for the deposition of gallium nitride (GaN) thin films. By utilizing in situ diagnostic techniques including optical emission spectroscopy and microwave interferometry, we determine different temperatures (rotational and vibrational of N2 molecules, and electronic excitation of Ar atoms) and electron density, respectively. Beyond providing insights into fundamental plasma physics, our research establishes a significant correlation between gas-phase dynamics, particularly those of gallium atoms (flux and average energy at the substrate) and deposited GaN thin film properties (growth rate and crystalline fraction). These findings underscore the role of plasma conditions in enhancing thin film quality, highlighting the importance of plasma characterization in understanding and optimizing GaN thin film growth processes. [ABSTRACT FROM AUTHOR]

Hafnium diboride (HfB2) is a promising candidate as a seed layer for GaN growth on Si substrates due to its excellent lattice and thermal coefficients matching with both materials. This work investigates the epitaxial growth of AlB2-type non-stoichiometric HfB2 (HfB2+δ with −0.1 < δ < 0.6) thin films on Si(111) using magnetron co-sputtering. We demonstrated that the process temperature significantly affected the surface roughness (RRMS ∼ 0.5–4 nm), film composition, and the nucleation of secondary impurity phases. Films deposited between 700 and 900 °C exhibit epitaxial growth on the Si substrate with a well-defined relationship of (0001) HfB 2 ‖ (111) Si and [ 11 2 ¯ 0 ] HfB 2 ‖ [ 1 1 ¯ 0 ] Si . Detailed x-ray diffraction and scanning transmission electron microscopy analyses reveal that impurity phases detected at high temperatures are primarily carbon-rich phases, identified as HfCx or HfCxBy. Interestingly, this secondary phase's crystal orientation follows the orientation of its surroundings. The different findings in terms of contamination (C and O) and deposition temperature offer valuable insights for further growth optimizing of high-quality epitaxial HfB2 thin films on Si(111) for future GaN-on-Si integration. [ABSTRACT FROM AUTHOR]

Ge1−xSnx thin films with a Sn content of x ≥ 0.1 present a direct bandgap, which is very interesting for the fabrication of efficient photonic devices. The monostanogermanide phase, Ni(GeSn), is promising to form ohmic contact in GeSn-based Si photonic devices. However, the formation kinetics of Ni stanogermanides and the incorporation of Sn in Ni–GeSn phases are not fully understood. In this work, Ni thin films were deposited on Ge and Ge0.9Sn0.1 layers grown in epitaxy on an Si(100) substrate using magnetron sputtering technique. In situ x-ray diffraction measurements were performed during the solid-state reaction of Ni/Ge and Ni/Ge0.9Sn0.1. 1D finite difference simulations based on the linear parabolic model were performed to determine the kinetics parameters for phase growth. The nucleation and growth kinetics of Ni germanides are modified by the addition of Sn. A delay in the formation of Ni(GeSn) was observed and is probably due to the stress relaxation in the Ni-rich phase. In addition, the thermal stability of the Ni(GeSn) phase is highly affected by Sn segregation. A model was developed to determine the kinetic parameters of Sn segregation in Ni(GeSn). [ABSTRACT FROM AUTHOR]

Resistive Random Access Memory (RRAM) is considered one of the most promising candidates for big data storage. By using atomic layer deposition and magnetron sputtering, HfO2 thin films were prepared on ITO first, which exhibited good resistive switching (RS) characteristics in the structure of Ag/HfO2/ITO. By analyzing the RS mechanism, it is found that both metal conductive filaments and oxygen vacancy conductive filaments coexisted and Sn ion in ITO can influence the retention of RRAM. Furthermore, a device in the structure of Ag/HfO2/Pt was proposed and prepared, which exhibited excellent RS characteristics, including an ultrahigh switching ratio averaging up to 108 and low operating voltage. It is concluded that the difference in the work function between the top and bottom electrodes contributes to improving the switching ratio, reducing the operating voltage. In addition, the Ag/HfO2/Pt device is similar to the Ag/HfO2-based threshold switching selector in the structure and in characteristics of high switching ratio, besides non-volatile memory. Hence, the device is functionally equivalent to the combination of an RRAM and a threshold switching selector. It is the potential way to replace the conventional 1S1R structure memory. [ABSTRACT FROM AUTHOR]

Amorphous carbon nitride (a-CNx) films, prepared by reactive radio frequency magnetron sputtering, exhibit unique characteristics under visible light irradiation, referred to as photoinduced deformation. This phenomenon represents an energy conversion system wherein photon energy transforms into kinetic energy. The chemical bonding structure of a-CNx films was analyzed using near-edge x-ray absorption fine structure (NEXAFS) at the NewSUBARU synchrotron facility of the University of Hyogo, Japan. This analysis aimed to elucidate the mechanisms behind the photoinduced deformation observed in a-CNx films. Three variants of a-CNx films, displaying varying degrees of photoinduced deformation, were deposited using a graphite target and nitrogen gas under different deposition temperatures. The NEXAFS spectra of the a-CNx films with substantial photoinduced deformation showed changes under light irradiation from a Xe lamp (directed through an optical window within the NEXAFS chamber). Specifically, the peaks corresponding to the 1s to π* transition related to C—C and 1s to σ* transition related to C—N bonds exhibited high sensitivity to visible light irradiation. Simultaneously, the N K-edge spectra associated with the 1s to π* transition, attributed to the N—C bond, exhibited a slight intensity decrease. Conversely, the C K-edge spectrum in the a-CNx films displaying minimal photoinduced deformation remained unchanged under visible light irradiation. The N K-edge spectra maintained a consistent shape under both visible light and dark conditions. [ABSTRACT FROM AUTHOR]

Herein, we report epitaxial growth of p-type Ni doped gallium chromium oxide thin film on Al2O3 substrates and studied its band alignment properties with that of the substrate. Thin films are grown using the magnetron-sputtering technique. Synchrotron-based XRD measurements, performed in the coplanar and non-coplanar geometries, confirm high-quality single domain epitaxial growth of p-type α-GaCrO3:Ni. Pendellosung oscillations around the Bragg peak and transmission electron microscopy reveal the high interfacial quality of p-type α-GaCrO3:Ni films with the substrate. Thin film, thickness ∼200 nm, shows around 70% average transmission. The values of valence band and conduction band offsets are determined to be 2.79 ± 0.2 and 0.51 ± 0.2 eV, respectively, which confirm straddling gap band alignment at the heterojunction. This type of alignment creates a threshold barrier for the selective charge carriers and is useful in enhancing the performance of a wide range of devices, including UV photodetectors, metal oxide semiconductor high electron mobility transistors, and light emitters. [ABSTRACT FROM AUTHOR]

Ferroelectric strontium barium niobate (SrxBa1−xNb2O6 or SBN) is a material with high electro-optic (EO) response. It is currently of interest in low voltage silicon-integrated photonics (SiPh). We have grown strongly textured SBN films with x = 0.65 by radio frequency sputtering on (100)-oriented SrTiO3 substrates where grains with mixed (310) and (001) out-of-plane orientation form. For these mixed orientation films, we observed a maximum effective EO coefficient of 230 pm/V using a transmission EO measurement geometry that is responsive only to the in-plane polarization component coming from the (310)-oriented grains. We also demonstrate that by growing SBN on TiO2-terminated SrTiO3 substrates, we can obtain predominantly (001)-oriented SBN films with out-of-plane polarization. Transmission EO measurements on such (001)-oriented films show a reduced effective Pockels coefficient of 88 pm/V, which is consistent with the overall ferroelectric polarization becoming out-of-plane. This work shows that controlling substrate termination is effective in controlling the grain orientation of SBN films grown on top and that one can readily integrate SBN films on SrTiO3-buffered Si for use in SiPh. [ABSTRACT FROM AUTHOR]

Among the numerous advantages of the high-power impulse magnetron sputtering (HiPIMS) technique, the most important is the enhanced ionization degree of sputtered species contributing to the film growth. Consequently, the quality of deposited thin films is highly improved. Still, the optimization process is challenging due to the complexity associated with the intricate transport of the sputtered species, ionized or neutrals. The scarce knowledge available on the spatial distribution of these species when operating a HiPIMS discharge makes the quantitative prediction of any deposition feature particularly difficult. In this paper, we discuss the influence of experimentally controllable quantities, such as gas pressure and target current density, on the transport of sputtered titanium in non-reactive (argon) HiPIMS, namely, on the behavior of metal atoms and metal ion fluxes intercepting the substrate. Systematic quantitative measurements were performed in a diameter normal plane on a circular planar target. Hence, the 2D spatial distribution of the ionized flux fraction (IFF) and the total flux of titanium sputtered particles (deposition rate) are evaluated by biasing a quartz crystal microbalance equipped with an electron magnetic filter. The wide range of parameters we examined allows us to predict and optimize the flux of sputtered species based on complete mapping of the IFF of sputtered particles. [ABSTRACT FROM AUTHOR]

Boron carbonitride (BCN) films containing hybridized bonds involving B, C, and N over wide compositional ranges enable an abundant variety of new materials, properties, and applications; however, their electronic performance is still limited by the presence of structural and electronic defects, yielding sluggish mobility and electrical conductivity. This work reports on mechanically stable BCN films and their corresponding optical and electronic properties. The ternary BCN films consisting of hybridized B–C–N bonds have been achieved by varying N2 flow by the radio frequency magnetron sputtering method. The BCN films show a bandgap value ranging from 3.32 to 3.82 eV. Hall effect measurements reveal an n-type conductivity with an improved hall mobility of 226 cm2/V s at room temperature for the optimal film. The n-BCN/p-Si heterojunctions exhibit a nonlinear rectifying characteristic, where the tunneling behavior dominates the injection regimes due to the density of defects, i.e., structural disorder and impurities. Our work demonstrates the tunable electrical properties of BCN/Si p–n diodes and, thus, is beneficial for the potential application in the fields of optics, optoelectronics, and electrics. [ABSTRACT FROM AUTHOR]

The giant spin–orbit torque (SOT) generated by topological surface states in topological insulators (TIs) provides an energy-efficient writing method for magnetic memory. In this study, we demonstrate a topological insulator/spin valve (TI/SV) device that operates at room temperature. An ultrathin, high-quality TI (Bi0.5Sb0.5)2Te3 (BST) thin film is epitaxially grown as a functional layer on a (0001)-Al2O3 substrate via molecular beam epitaxy in ultrahigh vacuum. Subsequently, Ta/CoFe/Cu/CoFe/IrMn layers are grown on BST/Al2O3 thin films using magnetron sputtering to form TI/SV devices via a subsequent standard lithography process. The resulting TI/SV devices exhibit a giant magnetoresistance of up to ∼1.1% at room temperature. Additionally, a low switching current density of approximately 1.25 × 105 A cm−2 is achieved, which implies high potential for further reducing the energy consumption of SOT-based devices. The SOT conversion efficiency and charge-spin conversion efficiency of the TI layer are approximately 4.74 × 10−6 Oe A−1 cm2 and 1.33, respectively, as extracted from the SOT-induced shift of the magnetic switching field. Moreover, the switching current density reduces steadily with the device size scaling down. This study can facilitate the realization of energy-efficient magnetic memory devices in the future. [ABSTRACT FROM AUTHOR]

PtS2, a member of the group 10 transition metal dichalcogenides (TMDs), has received extensive attention because of its excellent electrical properties and air stability. However, there are few reports on the preparation of single-crystal PtS2 in the literature, and the growth mechanism of single crystal PtS2 is not well elucidated. In this work, we proposed a method of preparation that combines magnetron sputtering and chemical vapor transport to obtain monocrystalline PtS2 on a SiO2/Si substrate. By controlling the growth temperature and time, we have synthesized a single crystalline PtS2 of hexagonal shape and size of 1–2 μm on a silicon substrate. Combining the molecular dynamics simulation, the growth mechanism of single crystal PtS2 was investigated both experimentally and theoretically. The synthesis method has a short production cycle and low cost, which opens the door for the fabrication of other TMDs single crystals. [ABSTRACT FROM AUTHOR]

Al0.85Sc0.15N thin films, about 920 nm thick, have been deposited on the Si (001) substrate by reactive magnetron sputtering at 600 °C. X-ray diffraction and pole-figure measurements revealed [0002]-oriented texture structures of the nitride films without any phase separations before and after cyclic annealing at 600–900 °C for up to 48 min. Cross-sectional studies by transmission electron microscopy and energy dispersive x-ray analysis revealed an intermediate Al0.85Sc0.15N layer of ∼24.6 nm thick with smaller grains and tilted [0002]-orientations compared to its overlayer, i.e., a nucleation layer (NL), on the Si substrate. After annealing, apparent morphological changes have been observed at the near-interface regions, including the NL, the NL/Si interface, and the Si substrate, rather than in the Al0.85Sc0.15N overlay. Undesired oxygen has been observed in the nitride film and its composition increased during post-growth thermal annealing without forming oxides. These observations shed new light on crystal growth and post-growth thermal annealing of AlScN toward their high-performance piezoelectric applications. [ABSTRACT FROM AUTHOR]

Low-energy ion beam irradiation, combined with the introduction of impurities, presents a promising approach for nanopatterning silicon (Si) surfaces. In this research, we investigate the surface evolution of Si (100) surfaces irradiated by 75 eV helium (He) plasma, in the presence of tantalum (Ta), traditionally regarded as an impurity incapable of initiating pattern formation, as evidenced in prior studies. The Ta impurities are pre-deposited onto the Si surfaces using the magnetron sputtering method, which offers a more controlled and quantifiable approach compared with the conventional co-deposition route. After irradiation at 800 K, dense cone arrays are produced on the Si surface. The growth of the cones is explored for fluence spanning (1–10) × 1025 m−2. The cross-sectional scanning electron microscope images indicate that the cone lengths and base width are well characterized by t1/2 dependence. The kinetics of the cone growth follow Fick's law, characterized by an effective diffusive mechanism with the coefficients of diffusion: D = 6.49 ± 0.83 × 10−16 m−2 s−1. Transmission electron microscope observations reveal that the cone has distinct inner and outer parts with different microstructures and a clear interface. The growth mechanism of these cones is elucidated as a composite process involving preferential sputtering, the destabilizing influence of He bubbles, and the migration of adatoms. [ABSTRACT FROM AUTHOR]

Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. Here, we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress. [ABSTRACT FROM AUTHOR]

VO2-based thermochromic coatings have gained much attention in temperature-adaptive smart windows, and constructing multilayer film structures is the main way to obtain high thermochromic performances. Based on the self-developed objective-orientated automatic optimization code, the present research realized customized designs of thermochromic multilayer coatings composed of VO2, TiO2, and SiO2 from the objectives of visible luminance (Tlum) and solar light modulation (ΔTsol). The TiO2/VO2/s, VO2/TiO2/s, TiO2/VO2/TiO2/s, and SiO2/TiO2/VO2/TiO2/s (s denotes substrate) multilayer film systems were then prepared by magnetron sputtering and vacuum controllable heating, with their structures, insulator-metallic transition, and thermochromic properties being carefully studied. The result showed that the best trade-off between high Tlum and high ΔTsol was achieved for these film assemblies, and solar light modulation was mainly limited at the near-IR wavelength region of the solar spectrum, with the difference between cool- and hot-state Tlum being greatly reduced. In the case of the four-layer SiO2/TiO2/VO2/TiO2/s, very high average Tlum (60%) and high ΔTsol (14%) were obtained. A 100 × 100 mm2 of the SiO2/TiO2/VO2/TiO2/s was also prepared, and it showed an obvious temperature adjustment, and the service life can last for 14 years under normal weather conditions. Not limited to the prepared multilayer film systems, the methodology used here is also suitable for the fast development of other multilayer film systems. [ABSTRACT FROM AUTHOR]

A successful hexagonal Cu 2 S p-type semiconductor thin film using DC magnetron sputtering is reported. Films with thickness gradients were deposited by taking advantage of deposition geometry and target dimensions. X-ray diffraction (XRD) analysis confirmed the exclusive formation of the hexagonal Cu 2 S phase. Elemental composition and thickness dependence with the sample position were determined using energy-dispersive x-ray spectroscopy. Optical properties, including the optical bandgap, refractive index, and extinction coefficient, were assessed by modeling transmittance spectra. The Tauc–Lorentz oscillator and Drude models were employed for this purpose. XRD data analysis successfully determined the film thickness (t X R D ) as a function of the sample position, aligning well with thickness values (t T) derived from transmittance spectra analyses. These results were further supported by film thickness values (t S E M ) obtained from cross-sectional SEM images. Charge carrier density and mobility, extracted from the optical models, were found to be consistent with DC electrical measurements. AC impedance curves were effectively modeled with RL–RC parallel circuits. The results indicate that the inductance (L) and capacitance (C) components of the films increase with decreasing film thickness. [ABSTRACT FROM AUTHOR]

Epitaxial NiO and CrN thin films were deposited on a single-crystal A l 2 O 3 (1 1 ¯ 02) (r-plane sapphire) using magnetron sputtering. The two materials were intentionally deposited into two different deposition chamber designs and under different conditions (temperature, pressure, gases, and energy of sputtered particles). Despite the differences in the deposition condition and material system, both materials had the same feature with uncommon tilted epitaxial growth. Through an in-depth x-ray diffraction analysis of the NaCl (B1)-structured materials on r-plane sapphire, the full twin domain epitaxial relations were determined and can be described as (110) NaCl (B 1) ∥ (4 4 ¯ 03) A l 2 O 3 and [ 1 1 ¯ 2 ] NaCl (B 1) ∥ [ 1 ¯ 1 ¯ 20 ] A l 2 O 3 . This relationship differs from the previously observed orientation of (100) NaCl (B 1) ∥ (1 1 ¯ 02) A l 2 O 3 and [ 100 ] NaCl (B 1) ∥ [ 10 1 ¯ 0 ] A l 2 O 3 . These results are of general relevance for the growth of the extended NaCl (B1)-structured cubic material family onto a r-plane sapphire substrate where similar epitaxial growth can be expected. [ABSTRACT FROM AUTHOR]

Epitaxial NiO and CrN thin films were deposited on a single-crystal A l 2 O 3 (1 1 ¯ 02) (r-plane sapphire) using magnetron sputtering. The two materials were intentionally deposited into two different deposition chamber designs and under different conditions (temperature, pressure, gases, and energy of sputtered particles). Despite the differences in the deposition condition and material system, both materials had the same feature with uncommon tilted epitaxial growth. Through an in-depth x-ray diffraction analysis of the NaCl (B1)-structured materials on r-plane sapphire, the full twin domain epitaxial relations were determined and can be described as (110) NaCl (B 1) ∥ (4 4 ¯ 03) A l 2 O 3 and [ 1 1 ¯ 2 ] NaCl (B 1) ∥ [ 1 ¯ 1 ¯ 20 ] A l 2 O 3 . This relationship differs from the previously observed orientation of (100) NaCl (B 1) ∥ (1 1 ¯ 02) A l 2 O 3 and [ 100 ] NaCl (B 1) ∥ [ 10 1 ¯ 0 ] A l 2 O 3 . These results are of general relevance for the growth of the extended NaCl (B1)-structured cubic material family onto a r-plane sapphire substrate where similar epitaxial growth can be expected. [ABSTRACT FROM AUTHOR]

A time-dependent hybrid plasma model composed of a zero-dimensional global model and a two-dimensional fluid model is proposed for simulation of plasma chemistry and transportation of plasma during Cr thin film deposition by deep oscillation magnetron sputtering (DOMS). The global model deals with plasma reactions in the ionization region near the target with discharge voltage and current waveforms as inputs. The temporal plasma characteristics calculated by the global model are utilized as a boundary condition for the two-dimensional fluid model to simulate high-density plasma transportation in the diffusion region through the entire macropulse period. The full momentum equation taking inertia force into consideration is applied for ion momentum conservation in the fluid model instead of using the drift-diffusion approximation, which ensures validity of the simulation for low-pressure plasmas. The deposition flux as well as the kinetic and potential energy fluxes transferred to the growing films are calculated by the hybrid model. Microstructure evolution of the DOMS deposited Cr thin films from zone I to zone T is attributed to the growing kinetic and potential energies as the charging voltage increases according to the structure zone diagram. The deposition rate loss in DOMS is explained by the back attraction effect, sputtering yield effect, and densification of the films. [ABSTRACT FROM AUTHOR]

We have measured the absolute doubly differential angular sputtering yield for 20 keV Kr+ impacting a polycrystalline Cu slab at an incidence angle of θi = 45° relative to the surface normal. Sputtered Cu atoms were captured using collectors mounted on a half dome above the sample, and the sputtering distribution was measured as a function of the sputtering polar, θs, and azimuthal, ϕs, angles. Absolute results of the sputtering yield were determined from the mass gain of each collector, the ion dose, and the solid angle subtended, after irradiation to a total fluence of ∼1 × 1018 ions/cm2. Our approach overcomes shortcomings of commonly used methods that only provide relative yields as a function of θs in the incidence plane (defined by the ion velocity and the surface normal). Our experimental results display an azimuthal variation that increases with increasing θs and is clearly discrepant with simulations using binary collision theory. We attribute the observed azimuthal anisotropy to ion-induced formation of micro- and nano-scale surface features that suppress the sputtering yield through shadowing and redeposition effects, neither of which are accounted for in the simulations. Our experimental results demonstrate the importance of doubly differential angular sputtering studies to probe ion sputtering processes at a fundamental level and to explore the effect of ion-beam-generated surface roughness. [ABSTRACT FROM AUTHOR]

Sputter deposition of ultrathick (≈ 20 μ m) Au–Ta alloy coatings on sphero-cylindrical substrates is key for the fabrication of hohlraums for magnetically assisted inertial confinement fusion. Here, we study the deposition of AuTa 4 alloy coatings onto rotating substrates. We use high-power impulse magnetron sputtering (HiPIMS) in a constant peak target voltage mode. Results show that the target erosion state has a strong impact on the dominant crystallographic phase, microstructure, surface morphology, and electrical resistivity of AuTa 4 films. This is due to effects of changes in the confining magnetic field with target erosion on the HiPIMS discharge characteristics and the sputter source output. We quantify these effects via plasma diagnostics and discuss the optimization of HiPIMS deposition of ultrathick films for cases when target erosion effects dominate film properties. [ABSTRACT FROM AUTHOR]

High quality, uni-polar, epitaxial AlN with minimum oxygen content promises excellent surface acoustic wave and bulk acoustic wave resonator characteristics such as high electromechanical coupling coefficient and power handling capabilities, which is particularly useful for RF filter applications. By systematically varying the growth temperature, the study investigates its impact on the oxygen levels, defect states, and crystallographic texture of the AlN thin films using a combination of atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, spectroscopic ellipsometry, scanning transmission electron microscopy, as well as room temperature and temperature dependent I–V measurements. The research demonstrates that the films grown at a temperature of 700 ° C exhibit the most favorable results. These films exhibit the lowest oxygen levels, possess epitaxial growth, and display the highest crystalline quality (XRD AlN 0002 ω − FWHM = 1.3 °). Additionally, these films demonstrate a significant reduction in sub-bandgap absorption. By comparing the cathode current measured during deposition, we suggest that the presence of an impurity layer formed during idle time between depositions as a possible source of oxygen in the sputter chamber. In addition, the study presents a possible model to explain the mixed polarity observed in AlN and proposes various ways to achieve uni-polar AlN on silicon substrates. [ABSTRACT FROM AUTHOR]

The cobalt-based full Heusler alloy Co2MnGa (CMG) is well known for exhibiting an exotic phenomenon such as magnetic Weyl semimetallic nature with a high Curie temperature of ∼700 K and a giant anomalous Hall effect. Here, we report a detailed study of structural, electrical, and magnetic properties of Co2MnGa thin films (thickness in the 40–10 nm range) grown on Si(100) by the direct-current magnetron co-sputtering technique using Co and MnGa targets. Structural analysis of the samples revealed the polycrystalline nature of these films with B2 type structural ordering. The damping parameter decreases with the increase in film thickness and reaches the minimum value of 6.1 × 10−3 for a 40 nm thin CMG film. These CMG films are magnetically isotropic and soft ferromagnetic in nature. A remarkably high value of anomalous Hall conductivity (AHC) of 1920 S/cm (2 K) is found for the 40 nm thin film, which is comparable to earlier reported values on highly ordered CMG films. Nearly 73% of this AHC value originates from the intrinsic contribution. The AHC and longitudinal conductivity both increase with the film thickness. Different scaling mechanisms are used to compute the intrinsic and extrinsic contributions playing a role in AHC. The analysis of advanced scaling [by Tian et al., Phys. Rev. Lett. 103, 1–4 (2009)] performed on these CMG films suggests the consistency in the enhanced intrinsic AHC value irrespective of the thickness and a decrease in skew scattering contribution with thickness. These results will enhance the understanding about the magnetic and transport properties of Co2MnGa thin films of different thicknesses and suggest it to be a promising material for topospintronic applications. [ABSTRACT FROM AUTHOR]

PVD technologies, including vacuum arc evaporation and DC-magnetron sputtering, have been utilized in industrial settings since the early 1980s for depositing protective coatings. These coatings encompass a range of materials such as metal nitrides, carbonitrides, oxides, oxynitrides, and DLC, serving diverse applications such as cutting and forming tools, automotive components, and decoration. Vacuum arc evaporation generates a highly energized and ionized particle flux toward the substrate, while "classical" gas-ion-dominated direct current magnetron sputtering (DCMS) has limitations in generating ionized and energetic species of the sputtered target material. The development of High-Power Impulse Magnetron Sputtering (HiPIMS) has exhibited significant potential in addressing DCMS's limitations by enabling the production of highly energetic particles. This innovation, with its industrial applicability for protective coatings, was introduced around 2010. This paper aims to provide an industrial perspective on HiPIMS, serving as a guide for scientists and engineers in comprehending and implementing HiPIMS solutions. It covers historical context and fundamental characteristics. Basic features as well as state-of-the-art configurations of PVD systems are also described. Graphical representations of experimental results illustrate HiPIMS features, including operational modes, deposition rate effects, thickness uniformity, and sustainability, particularly in terms of energy efficiency. The discussion focuses on the application prospects, advantages, and constraints of industrially applied HiPIMS protective coatings, emphasizing cutting and forming tools, within the context of the findings presented. [ABSTRACT FROM AUTHOR]

The quest for lowering energy consumption during thin film growth by magnetron sputtering techniques becomes of particular importance in view of sustainable development goals. As large fraction of the process energy is consumed in substrate heating for the purpose of providing high adatom mobility necessary to grow dense films, the most straightforward strategy toward more environment-friendly processing is to find alternatives to thermally activated surface diffusion. One possibility is offered by high mass metal ion irradiation of the growing film surface, which has been recently shown to be very effective in densification of transition metal nitride layers grown with no external heating, such that Zone 2 microstructures of the structure-zone model are obtained in the substrate temperature Ts range otherwise typical for Zone 1 growth. The large mass difference between the incident ion and the atoms constituting the film results in effective creation of low energy recoils, which leads to film densification at low Ts. Due to their high mass, metal ions become incorporated at lattice sites beyond the near-surface region of intense recoil generation leading to further densification, while preventing the buildup of residual stress. The practical implementation of this technique discussed in this Perspective employs heavy metal targets operating in the high-power impulse magnetron sputtering (HiPIMS) mode to provide periodic metal-ion fluxes that are accelerated in the electric field of the substrate to irradiate layers deposited from direct current magnetron sputtering (DCMS) sources. A key feature of this hybrid HiPIMS/DCMS configuration is the substrate bias that is synchronized with heavy metal ion fluxes for selective control of their energy and momentum. As a consequence, the major fraction of process energy is used at sputtering sources and for film densification, rather than for heating of the entire vacuum vessel. Model material systems include TiN and metastable NaCl-structure Ti1−yAlyN films, which are well-known for challenges in stoichiometry and phase stability control, respectively, and are of high relevance for industrial applications. This Perspective provides a comprehensive overview of the novel film growth method. After presenting basic concepts, time-resolved measurements of ion fluxes at the substrate plane, essential for selective control of metal ion energy and momentum, are discussed. The role of metal ion mass, energy, momentum, and concentration is described in more detail. As some applications require substrate rotation for conformal coating, a section is devoted to the related complexity in the implementation of metal-ion-synchronized growth under industrial conditions. [ABSTRACT FROM AUTHOR]

Atomic layer plasma technologies require localizing ions' impact within nanometers up to an atomic layer. The possible way to achieve this is the decrease in the ion energy up to surface binding energy. At such low ion kinetic energies, the impact of different plasma effects, causing the surface modification, can be of the same order as kinetic ones. In this work, we studied the sputtering of amorphous silicon films by Ar+, Kr+, and Xe+ ions at energies of 20–200 eV under the low-pressure inductively coupled plasma discharge in pure argon, krypton, and xenon, respectively, at a plasma density of 1–1.5 × 1010 cm−3. Under the plasma conditions, a high asymmetry of discharge allowed to form ion flux energy distribution functions with narrow energy peak (5 ± 2 eV full width at half maximum). Real time in situ control over the ion composition and flux as well as the sputtering rate (the ratio of the film thickness change to the sputtering time) provided accurate determination of the sputtering yields Y (E i). It is shown that at ion energy above ∼70 eV, the "classical" kinetic sputtering mechanism prevails. In this case, Y (E i) grows rather rapidly with ion energy, increasing with the decrease in the ion mass: the closer the ion mass to the target atom mass, the higher the Y (E i). Below 70 eV, the growth of Y (E i) strongly slows down, with Y (20 eV) being still high (>10−3), indicating the impact of plasma. The obtained trends of Y (E i) are discussed in light of surface modification studied by atomic force microscopy and angular x-ray photoelectronic spectroscopy. [ABSTRACT FROM AUTHOR]

The unstable anode/electrolyte interphase induces severe lithium dendrite growth hindering the practical application of lithium metal batteries. The lithium alloy interphase presents a promising strategy for regulating Li+ plating/stripping behavior. However, binary or ternary alloys are insufficient to address various challenges in lithium metal batteries and the high temperature required for alloy preparation hampers their direct applications on lithium metal surfaces. In this study, a high‐entropy alloy (HEA) interphase is developed on lithium metal surfaces via room‐temperature magnetron sputtering, showcasing multifunctional advantages in regulating Li+ plating/stripping behavior. The cocktail effect of the (HEA) facilitated the formation of a homogeneous amorphous interphase with abundant lithiophilic sites and magnetic properties, promoting uniform Li+ nucleation and deposition. Furthermore, the high mechanical strength and corrosion resistance of HEA provided physicochemical stability for the lithium anode interphase, consistently suppressing dendrite growth. Consequently, lithium metal anodes with HEA interphases exhibited robust cycling performance lasting over 4000 h at 2 mA cm−2. The LFP full battery demonstrated high‐capacity retention of 90% with an average Coulombic efficiency of 99.7%. Thus, the HEA interphases on lithium metal surfaces offer controllable regulation of Li+ deposition behavior through high‐entropy manipulation, opening novel strategies for stable lithium metal batteries. [ABSTRACT FROM AUTHOR]

Novel multilayered films were engineered by integrating W 2 N and Ag-SiN x layers in a multilayer structure to obtain improved hardness and tribological properties. The films were fabricated by alternating magnetron sputtering, depositing 40 nm layers of W 2 N with varying thickness of Ag-SiN x layers varying in thickness from 4 to 20 nm. The effect of the increase thickness of the Ag-SiN x layers in the films microstructure and tribological properties were accessed. Tribological experiments were conducted at room temperature (RT), 500 °C, and RT-500 °C cycling conditions. The results revealed the production of a multilayered structure comprising single fcc-W 2 N layers interspersed with dual-phase layers consisting of fcc-Ag and amorphous SiN x phases. Tribological results indicated an improvement in the tribological performance with increase thickness of the Ag-SiN x layer up to 12 nm. The tribo-synergistic/combined action of both W 2 N and Ag-SiN x layers, along with the presence of layered lubricant tribo-phases of WO 3 and Ag 2 WO 4 , showcased the pivot role in reducing friction and enhancing wear resistance. The optimized multilayered film, featuring a 12 nm Ag-SiN x layer, demonstrated exceptional tribological properties under temperature-cycling from RT to 500 °C. [Display omitted] [ABSTRACT FROM AUTHOR]

In this study, a Titanium (Ti) doped α-Fe 2 O 3 (hematite) thin layer was synthesized onto a glass substrate, employing the simultaneous DC and RF magnetron sputtering method. The investigation focused on examining specific physical properties of the film. The optical, structural, morphological, and elemental features of the resulting Ti-doped α-Fe 2 O 3 thin film were characterized using different characterization techniques. The XRD studies indicated a rhombohedral crystal structure in the studied thin film. The calculation of the E g value for the thin film, based on absorption measurements, resulted in a value of 2.19 eV. Raman peaks were identified within the range of 218 cm−1 to 1300 cm−1. According to SEM images, the thin film exhibited a uniform surface morphology across the substrate. AFM images revealed a low root mean square (RMS) roughness value, indicating a smooth Ti:Fe 2 O 3 thin film surface. [ABSTRACT FROM AUTHOR]

The effect of Nb doping concentration (0, 1, 2, and 4 at. %) on donor defect‐induced ferromagnetism in ZnO thin films is investigated. The films are deposited on Si(111) substrates utilizing the radio frequency magnetron sputtering. X‐ray diffraction pattern unveils that the films show a pronounced orientation along the (002) direction. The relative intensities of defect‐related bands with that of the ultraviolet band from photoluminescence (PL) spectra show that 2 at. % Nb doping results in a greater number of donor defects (Zni+ and VO+) in the ZnO lattice. The parameters extracted from the electron paramagnetic resonance spectra follow a similar trend. The results from vibrating sample magnetometer measurement indicate that pure ZnO displays diamagnetic nature, whereas Nb‐doped ZnO exhibits a ferromagnetic nature. The saturation magnetization value is found highest for 2 at. % Nb doping, which correlates with the presence of a greater number of donor defects, as supported by the PL and electron paramagnetic resonance results. Images obtained from atomic force microscopy show that the surface roughness of the ZnO thin film reduces upon Nb doping. X‐ray photoelectron spectroscopy validates that Nb is doped in 2 at. % Nb‐doped ZnO thin film with Nb oxidation state of +5. [ABSTRACT FROM AUTHOR]

Magnetron‐sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their thermoelectric performance. In this work, nanocrystalline n‐type Bi2Te3 thin films with an average grain size of ≈110 nm are prepared using high‐temperature sputtering and post‐annealing. Herein, it is demonstrated that high‐temperature treatment exacerbates Te evaporation, creating Te vacancies and electron‐like effects. Annealing improves crystallinity, increases grain size, and reduces defects, which significantly increases carrier mobility. Furthermore, the pre‐deposited Ti additives are ionized at high temperatures and partially diffused into Bi2Te3, resulting in a Ti doping effect that increases the carrier concentration. Overall, the 1 µm thick n‐type Bi2Te3 thin film exhibits a room temperature resistivity as low as 3.56 × 10−6 Ω∙m. Notably, a 5 µm thick Bi2Te3 thin film achieves a record power factor of 6.66 mW mK−2 at room temperature, which is the highest value reported to date for n‐type Bi2Te3 thin films using magnetron sputtering. This work demonstrates the potential for large‐scale of high‐quality Bi2Te3‐based thin films and devices for room‐temperature TE applications. [ABSTRACT FROM AUTHOR]

In this study, magnetron sputtered carbothermic reduced iron boride (FeB) coatings were developed on grey cast iron (GCI) substrates at different substrate temperatures. The impact of substrate temperature on structural, mechanical, and corrosion behavior was examined for two FeB deposition scenarios: FeB coatings deposited at room temperature (RT) and at 500 °C substrate temperature. The evolution of phases and microstructure was studied using XRD and FESEM, respectively. The mechanical properties, creep, deformation behavior, and adhesion strength (scratch test) of the deposited coatings were investigated using nanoindentation at ambient temperature. The highest hardness and Young's modulus of 16 GPa and 231 GPa respectively, were achieved at 500 °C due to microstructural enhancement. Potentiodynamic polarization and electrochemical impedance spectroscopy were used to evaluate the corrosion behavior of the coatings. The results show that substrate temperature strongly influences the surface morphology of the coatings, which in turn governs the mechanical and corrosion behavior of the FeB coating. The FeB-coated GCI at 500 °C substrate temperature showed higher resistance to scratching, better mechanical properties, and improved corrosion resistance which is attributed to the enhanced adhesive strength, refined microstructure, and formation of protective oxide layers of FeB on the surface of the coatings. [Display omitted] • FeB coatings have a hardness of 11.8 GPa, an elastic modulus of 165 GPa at RT, and 15.6 GPa and 231 GPa at 500 °C. • The FeB coating showed conformal cracking at RT and tensile cracking at 500 °C, indicating better adherence at 500 °C. • At 500 °C, the FeB coating displayed improved corrosion resistance and reduced corrosion current density. • EIS data revealed higher charge transfer resistance and a larger semicircle arc for the FeB coating at 500 °C compared to RT. [ABSTRACT FROM AUTHOR]

In this study, TiO2 coatings are deposited on Si(100) wafers by direct current pulsed magnetron sputtering technology. The crystal structure of TiO2 coatings gradually transforms from the anatase phase to the amorphous phase when the sputtering power is decreased from 900W to 150W. Besides, the growth surface temperature of TiO2 coatings decreases from 630∘C to 241∘C. The relationship between the growth behavior and growth surface temperature of TiO2 coatings is investigated using the dynamic scaling theory. The results show that in the first stage, the growth behavior of TiO2 coatings gradually transforms from the Frank–van der Merwe mode to the Volmer–Weber mode with decreasing sputtering power from 900W to 150W. In the second stage, the growth behavior of TiO2 coatings gradually transforms from the Stranski–Krastanov mode to the Volmer–Weber mode. Transformation of the growth behavior of TiO2 coatings in the second stage transforms the crystal structure of TiO2 coatings from the anatase phase to the amorphous phase. [ABSTRACT FROM AUTHOR]

This work discusses label-free biosensing application of a double-layer optical fiber interferometer where the second layer tailors the reflection conditions at the external plain and supports changes in reflected optical spectrum when a bio-layer binds to it. The double-layer nanostructure consists of precisely tailored thin films, i.e., titanium (TiO2) and hafnium oxides (HfO2) deposited on single-mode fiber end-face by magnetron sputtering. It has been shown numerically and experimentally that the approach besides well spectrally defined interference pattern distinguishes refractive index (RI) changes taking place in a volume and on the sensor surface. These are of interest when label-free biosensing applications are considered. The case of myeloperoxidase (MPO) detection—a protein, which concentration rises during inflammation—is reported as an example of application. The response of the sensor to MPO in a concentration range of 1 × 10−11–5 × 10−6 g/mL was tested. An increase in the MPO concentration was followed by a redshift of the interference pattern and a decrease in reflected power. The negative control performed using ferritin proved specificity of the sensor. The results reported in this work indicate capability of the approach for diagnostic label-free biosensing, possibly also at in vivo conditions. [ABSTRACT FROM AUTHOR]

The combination of the phase transition in thermochromic vanadium dioxide (VO2) with plasmonic nanoparticles paves the way for applications in various fields, including optical sensing, advanced coatings, and dynamic optical devices. This study presents a simple fabrication method to control both the size and surface coverage of NPs combined with VO2. First, a thermochromic VO2 coating with a phase transition at 68 °C is synthesized using reactive magnetron sputtering. Then, monodisperse 30 nm diameter gold NPs are bonded to the VO2 surface using (3‐aminopropyl)trimethoxysilane (APTMS) linkers, examining the effect of immersion duration on surface coverage. Two platforms are developed: a VO2 thin film with a monolayer of NPs and a configuration with NPs between two VO2 films. The temperature‐dependent plasmonic response of these platforms is measured by extinction spectroscopy, showing a significant wavelength resonance shift of approximately 10 nm for the first platform and 20 nm for the second. Optical simulations analyze this shift over various geometries, from isolated NPs to fully covered NPs, achieving a 60 nm shift for NPs embedded in a thin VO2 film. This study demonstrates an effective approach to synthesizing thermochromic VO2 coatings with gold NPs, offering insights into the plasmonic properties of hybrid platforms. [ABSTRACT FROM AUTHOR]

Using the radio frequency magnetron sputtering process, NaNbO3-based antiferroelectric thin films were obtained on Pt(111)/Ti/SiO2/Si substrates. The effects of annealing temperature on the phase structure, dielectric properties, ferroelectric properties, and energy storage properties of the thin films were studied. As the annealing temperature increased, the crystallinity and film quality of the thin films improved. Moreover, oxygen vacancies were effectively suppressed, which is beneficial for the thin film to obtain a higher dielectric constant, a larger saturation polarization, and a smaller residual polarization intensity. The NaNbO3-based thin film has a higher energy storage density, power density and efficiency (Wrec = 3.6 J/cm3, Pd =200.8 kW/cm3, η = 68.31%) at an annealing temperature of 600 ℃. The observed phenomenon could be attributed to higher breakdown field strength and polarization difference resulting from the appropriate annealing temperature and the presence of lower oxygen vacancies under pure oxygen atmosphere. The wonderful property of the NaNbO3-based thin film indicates that it will have the potential to be applied in a wide range of contexts within the sphere of energy storage. [ABSTRACT FROM AUTHOR]

The study of exchange bias in various types of systems received great attention due to widespread applications in numerous magnetoelectronic devices and, in particular, understanding and controlling exchange bias in single layer films becomes crucial in advancing the spintronics field. With this connection, we here present a study on the origin of the exchange bias in the Fe3O4 (t nm) films with a polycrystalline structure fabricated via magnetron reactive sputtering directly onto a Si(100) substrate at ambient conditions and its correlation with thickness of the films and cooling fields. Structural and morphological studies reveal single phase polycrystalline Fe3O4 films and the average roughness increases with increasing thickness of the films. Magnetic properties show typical ferromagnetic behavior in Fe3O4 film, but interestingly, a considerable exchange bias (EB) of 550 Oe is noticed in 30 nm thick Fe3O4 film at 10 K when subjected to field cool. In addition, Fe3O4 (30 nm) film exhibits a spontaneous exchange bias without any external applied field. These observations can be understood from the magnetic exchange coupling at the interfaces between the ferromagnetic Fe3O4 and antiferromagnetic FeO, and the existence of a FeO can be validated from the magnetic anomalies in thermomagnetization data. Furthermore, the magnetic anomalies fade out at higher film thicknesses due to reduced (increased) volume of FeO (Fe3O4), causing suppression in the EB effect. The variation of EB with cooling field and film thickness demonstrates the tunability of EB in single layer Fe3O4 film and its suitability for possible applications in spintronics. [ABSTRACT FROM AUTHOR]

Recent theoretically predicted strong anisotropic spin Hall effect (SHE) or inverse SHE (ISHE) in chiral antiferromagnetic compounds Mn3X (X = Ge, Sn, Ga, Ir, Rh, and Pt) could potentially expand the horizons of the antiferromagnet spintronics; however, it has not been experimentally observed yet. For achieving this goal, we have first successfully fabricated high-quality Kagome phase Mn3Sn films with smooth surface by a combination of room-temperature magnetron sputtering and high-temperate annealing. These Mn3Sn films were proved to be epitaxially grown on MgO (110) single crystal substrate with a seldom reported ( 1 0 1 - 0 ) orientation that could serve as a good platform for the studies of the crystalline orientation-related anisotropic phenomenon. Then, by employing spin pumping-induced inverse spin Hall effect (SP-ISHE) voltage measurements, we have experimentally proved the existence of crystalline orientation-related anisotropic ISHE with an amplitude of more than 35% in our Mn3Sn films. [ABSTRACT FROM AUTHOR]

Polypropylene and ammonium phosphate (AP) composites were synthesized at a 25 wt% concentration. The changes in the morphological, thermal, and physical behavior of the composites were analyzed with the addition of lignosulfonate (LG) and zirconium phosphate (ZrP). Additionally, metallic zirconium was deposited onto lignosulfonate using the magnetron sputtering technique to develop polypropylene and zirconium-modified lignosulfonate (LGMod) composites. Thus, composites of PP/25AP, PP/25AP/8LG/5ZrP, and PP/25AP/8LGMod were synthesized. The synthesis involved mixing the materials in a Hake mixer, followed by compression molding. The composites were characterized by field emission scanning electron microscopy (SEM–EDS), a thermogravimetric analysis (TGA) with combustion parameters, a vertical burn test (UL-94), a thermal camera, and mechanical properties. All composites achieved a V2 rating according to UL-94 standards. The PP/25AP extinguishes flames more quickly compared to other materials, approximately 99.2% faster than PP and showed the lowest temperature variation and mass loss after burning. The PP/25AP/8LG/5ZrP composite exhibited a 7% higher rigidity and 84.5% better flame retardancy compared to pure PP. Additionally, substituting ZrP with LGMod led to a lower environmental impact and improved thermal properties, despite some mechanical disadvantages. [ABSTRACT FROM AUTHOR]

Mg metal vascular stents not only have good mechanical support properties but also can be entirely absorbed by the human body as a trace element beneficial to the human body, but because Mg metal is quickly dissolved and absorbed in the human body, magnesium metal alone cannot be ideally used as a vascular stent. Since the dense oxide Zn film formed by Zn contact with oxygen in the air has good anti-corrosion performance, the Zn nanolayer film deposited on the Mg matrix vascular scaffold by magnetron sputtering can effectively inhibit the rapid dissolution of Mg metal. However, there are few studies on the molecular dynamic structural defects of Mg-matrix Zn atomic magnetron sputtering, and the atomic level simulation of Mg-matrix Zn thin-film depositions can comprehensively understand the atomic level structural defects in the deposition process of Zn thin films from a theoretical perspective to further guide experimental research. Based on this, this research first studied and analyzed the atomic layer structure defects, surface morphology, surface roughness, atomic density of different deposited layers, radial distribution function, and residual stress of the thin-film deposition layer of 1500 deposited Zn atoms at the initial deposition stage, during and after deposition under Mg-matrix thermal layer 500K and a deposited velocity 5 Å/ps by molecular dynamics. At the same time, the effects of temperature and deposited velocity of the Mg-matrix thermal layer on the surface morphology, roughness, and biaxial stress of the deposited films were studied. [ABSTRACT FROM AUTHOR]

Glow discharges are known to be limited for running at high current densities (typically below 0.1 A ⋅ c m − 2 ). Magnetically enhanced plasmas overcome this limitation, reaching up to two orders of magnitude higher current densities. However, the highest reported discharge current density hardly reaches 10 A ⋅ c m − 2 even in high power impulse magnetron sputtering (HiPIMS). Here, we report on the long (∼1 ms) pulsed operation of the magnetron in helium with an over-dense current (∼30 A ⋅ c m − 2 , usual for arcs) while preserving the glow mode. This regime defying the arcs was called hyper power impulse magnetron (HyPIM) because the power injected per pulse is several times higher than in HiPIMS for the same average power and pulse duration. HyPIM operation mode is distinguished from HiPIMS by the limited pulse voltage and is unsuitable for thin film deposition but may interest plasma switches. These huge currents were obtained for two cathode materials, molybdenum (Mo) and tungsten (W). Different experimental diagnostics bring insights into the physical phenomena governing the HyPIM plasma. A discussion on the role played by the metal atoms on the current unveils the origin of such exceptional glow current all along the pulse and the key role of the helium metastable atoms. A schematic of the kinetic steps of the HyPIM discharge is proposed. [ABSTRACT FROM AUTHOR]

High‐temperature energy storage performance of dielectric capacitors is crucial for the next generation of power electronic devices. However, conduction losses rise sharply at elevated temperature, limiting the application of energy storage capacitors. Here, the mica films magnetron sputtered by different insulating layers are specifically investigated, which exhibit the excellent high‐temperature energy storage performance. The experimental results revealed that the PbZrO3/Al2O3/PbZrO3 (PZO/AO/PZO) interface insulating layers can effectively reduce the high‐temperature leakage current and conduction loss of the composite films. Consequently, the ultrahigh energy storage density (Wrec) and charge‒discharge efficiency (η) can be achieved simultaneously in the flexible mica‐based composite films. Especially, PZO/AO/PZO/mica/PZO/AO/PZO (PAPMPAP) films possess excellent Wrec of 27.5 J/cm3 and η of 87.8% at 200°C, which are significantly better than currently reported high‐temperature capacitive energy storage dielectric materials. Together with outstanding power density and electrical cycling stability, the flexible films in this work have great application potential in high‐temperature energy storage capacitors. Moreover, the magnetron sputtering technology can deposit large‐area nanoscale insulating layers on the surface of capacitor films, which can provide technical support for the industrial production of capacitors. [ABSTRACT FROM AUTHOR]

Copyright of Lubrication Engineering (0254-0150) is the property of Editorial Office of LUBRICATION ENGINEERING and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

In the present research study, the tribological characterization of cobalt (Co) and boron nitride (BN) coating was carried out at the nanoscale level. A single-layered nano-coating with a thickness of 500 nm was deposited on the Al-Si substrate by using solid targets of cobalt and boron nitride. The structural analysis and surface morphology of Co-BN coatings was characterized by using field emission scanning electron microscope (FESEM), energy-dispersive spectroscopy (EDS) and x-ray diffraction (XRD). Nano-hardness tests were carried out to study the effect of load on Hardness (H) and Young's modulus (E). The tribological properties of Co-BN coatings were carried out to investigate the deformation and failure behavior of the coating/substrate. It was observed that Co-BN particulates were uniform and compact without cracks and homogeneously distributed within the coating. The results showed that the hardness and Young's modulus of Co-BN coating decreased with an increase in load. It was also observed that Co-BN coating adheres well to the substrate and showed good lubricating characteristics with a coefficient of friction (COF) varying from 0.2 to 0.5. The wear resistance of Co-BN coating increased from 4.22 × 10-6 to 1.56 × 10−5 mm3/m as the load increased from 0.5 to 2 N. The results of this study indicate that Co-BN coatings developed by magnetron sputtering show better nanomechanical and tribological properties and can be used efficiently as a solid lubricating coating and in aerospace applications. [ABSTRACT FROM AUTHOR]

Copyright of Acta Materiae Compositae Sinica is the property of Acta Materiea Compositae Sinica Editorial Department and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

In this study, titanium metal (99.99%) was deposited on quartz glass substrate test specimens by DC magnetron sputtering. Thereafter, radio-frequency magnetron sputtering was used to create an oxide layer of ITO:Ga (97.3 at%) to form a final dual-layer transparent and conductive film on the glass substrate. The film was then annealed at different temperatures under vacuum. The thermal energy rearranged the internal crystalline structure, and this reduced the number of crystalline defects. The multilayer structure of the dual-layer film was explored after annealing: the film thickness, electrical properties, transmission properties, surface structure, grain size, and quality factors were all analyzed. The results showed that the electrical properties of ITO:Ga/Ti improved after annealing at 500 °C (100 W; 30 min) and that the resistivity was 6.51 × 10-4 O·cm. The average penetration of ITO:Ga/Ti after annealing at 400 °C was 87.52%, and after annealing at 500 °C, it was 89.70%. The figure of merit was the optimal value of 4.78 × 10-3 O-1 after annealing at 500 °C. [ABSTRACT FROM AUTHOR]

Aluminum thin films were deposited by unbalanced grid-assisted magnetron sputtering. Depositions were made with different net charges of the particles bombarding the substrate through modifications in the magnetic field with the aid of permanent and electro magnets. Film morphology was evaluated by atomic force microscopy and the results point out that the surface roughness of the film deposited with net positive ions bombardment is about five times higher than the surface roughness obtained with net electrons bombardment and ten times higher than that obtained with neutral net charge bombardment. [ABSTRACT FROM AUTHOR]