1. Interface effects of polycrystalline Fe2O3 thin films on Pt.
- Author
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Kostriukov, Vladimir, Geri, Lidor, and Sharoni, Amos
- Subjects
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THIN films , *MAGNETIC relaxation , *MAGNETORESISTANCE , *MAGNETIC fields , *SUBSTRATES (Materials science) - Abstract
The magnetic state of an antiferromagnetic (AFM) insulator can be read and manipulated in spintronics devices using bilayers of an AFM and a conducting layer, making it useful for spintronics devices. To date, research has focused on single crystals of AFMs, which enables the study of properties related to different crystallographic surfaces. However, combining single-crystal AFMs in spintronics devices may be problematic due to substrate selectivity and deposition conditions. In this work, we study the properties of polycrystalline Fe2O3 coupled with Pt as the conducting layer, asking how the magnetoresistive behavior differs in polycrystalline AFMs. We report on the angle dependent magnetoresistance and transverse magnetoresistance properties as a function of temperature and magnetic fields, comparing Fe2O3/Pt and Fe2O3/Cu/Pt thin films, in addition to magnetometry and structural characterization. The magnetoresistance signals do not depend on the thickness or volume behavior of the Fe2O3 layer, but rather the Fe2O3/Pt interface. Angle dependent magnetoresistance measurements show ferromagnetic-like behavior but with a non-standard effect of field, while transverse measurements show a sign change with temperature. This differs from effects reported for single-crystal Fe2O3 based bilayers. Interestingly, using transverse field measurements, we find that at low temperatures, the Fe2O3/Pt interface spins develop a glass-like relaxation of the magnetic signal, which undergoes freezing as the sample is further cooled. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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