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Funding: We gratefully acknowledge support from the Leverhulme Trust (Grant No. RL-2016-006 [P.D.C.K., B.E., T.A., A.R., C.B.]), the European Research Council (through the QUESTDO project, 714193 [P.D.C.K., G.R.S.]), the Engineering and Physical Sciences Research Council (Grant Nos. EP/T02108X/1 [P.D.C.K., P.A.E.M.] and EP/N032128/1 [D.A.M., G.B.]), and the Center for Computational Materials Science at the Institute for Materials Research for allocations on the MASAMUNE-IMR supercomputer system (Project No. 202112-SCKXX-0510 [R.B.V., M.S.B.]). S.B., E.A.M. and A.Z. gratefully acknowledge studentship support from the International Max-Planck Research School for Chemistry and Physics of Quantum Materials. Research conducted at MAX IV, a Swedish national user facility, is supported by the Swedish Research council under contract 2018-07152, the Swedish Governmental Agency for Innovation Systems under contract 2018-04969, and Formas under contract 2019-02496. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Spin–valley locking is ubiquitous among transition metal dichalcogenides with local or global inversion asymmetry, in turn stabilizing properties such as Ising superconductivity, and opening routes towards ‘valleytronics’. The underlying valley–spin splitting is set by spin–orbit coupling but can be tuned via the application of external magnetic fields or through proximity coupling. However, only modest changes have been realized to date. Here, we investigate the electronic structure of the V-intercalated transition metal dichalcogenide V1/3NbS2 using microscopic-area spatially resolved and angle-resolved photoemission spectroscopy. Our measurements and corresponding density functional theory calculations reveal that the bulk magnetic order induces a giant valley-selective Ising coupling exceeding 50 meV in the surface NbS2 layer, equivalent to application of a ~250 T magnetic field. This energy scale is of comparable magnitude to the intrinsic spin–orbit splittings, and indicates how coupling of local magnetic moments to itinerant states of a transition metal dichalcogenide monolayer provides a powerful route to controlling their valley–spin splittings. Postprint

The quest to govern the driving forces behind superconductivity and gain control over the superconducting transition temperature $T_{c}$ is as old as the phenomenon itself. Microscopically, this requires a proper understanding of the evolution of electron-lattice interactions in their parameter space. We report such a controlled study on $T_{c}$ in In$_{x}$Te via fine-tuning the In stoichiometry $x$. We find that increasing $x$ from 0.84 to 1 results in an enhancement of $T_{c}$ from 1.3 K to 3.5 K accompanied by an increase of the electron-phonon coupling constant from 0.45 to 0.63. Employing first-principles calculations, we show that this behavior is driven by two factors, each taking the dominant role depending on $x$. For $x\lesssim 0.92$, the major role is played by the density of electronic states at the Fermi level. Above $x\sim 0.92$, the change in the density of states flattens while the enhancement of $T_{c}$ continues. We attribute this to a systematic softening of lattice vibrations, amplifying the electron-phonon coupling, and hence, $T_{c}$., 7 pages, 5 Figures (main text) + 15 pages, 8 Figures (Supplement)

The band inversions that generate the topologically non-trivial band gaps of topological insulators and the isolated Dirac touching points of three-dimensional Dirac semimetals generally arise from the crossings of electronic states derived from different orbital manifolds. Recently, the concept of single orbital-manifold band inversions occurring along high-symmetry lines has been demonstrated, stabilising multiple bulk and surface Dirac fermions. Here, we discuss the underlying ingredients necessary to achieve such phases, and discuss their existence within the family of transition metal dichalcogenides. We show how their three-dimensional band structures naturally produce only small $k_z$ projected band gaps, and demonstrate how these play a significant role in shaping the surface electronic structure of these materials. We demonstrate, through spin- and angle-resolved photoemission and density functional theory calculations, how the surface electronic structures of the group-X TMDs PtSe$_2$ and PdTe$_2$ are host to up to five distinct surface states, each with complex band dispersions and spin textures. Finally, we discuss how the origin of several recently-realised instances of topological phenomena in systems outside of the TMDs, including the iron-based superconductors, can be understood as a consequence of the same underlying mechanism driving $k_z$-mediated band inversions in the TMDs., Comment: 14 pages, 8 figures

We explore the second order bilinear magnetoelectric resistance (BMER) effect in the $d$-electron-based two-dimensional electron gas $(2\mathrm{DEG})$ at the ${\mathrm{SrTiO}}_{3}(111)$ surface. We find evidence of a spin-split band structure with the archetypal spin-momentum locking of the Rashba effect for the in-plane component. Under an out-of-plane magnetic field, we find a BMER signal that breaks the sixfold symmetry of the electronic dispersion, which is a fingerprint for the presence of a momentum-dependent out-of-plane spin component. Relativistic electronic structure calculations reproduce this spin texture and indicate that the out-of-plane component is a ubiquitous property of oxide 2DEGs arising from strong crystal field effects. We further show that the BMER response of the ${\mathrm{SrTiO}}_{3}(111)$ 2DEG is tunable and unexpectedly large.

We explore the second order bilinear magnetoelectric resistance (BMER) effect in the d-electron-based two-dimensional electron gas (2DEG) at the SrTiO_{3}(111) surface. We find evidence of a spin-split band structure with the archetypal spin-momentum locking of the Rashba effect for the in-plane component. Under an out-of-plane magnetic field, we find a BMER signal that breaks the sixfold symmetry of the electronic dispersion, which is a fingerprint for the presence of a momentum-dependent out-of-plane spin component. Relativistic electronic structure calculations reproduce this spin texture and indicate that the out-of-plane component is a ubiquitous property of oxide 2DEGs arising from strong crystal field effects. We further show that the BMER response of the SrTiO_{3}(111) 2DEG is tunable and unexpectedly large.

Ferroelectric polarization and metallic conduction are two seemingly irreconcilable properties that cannot normally coexist in a single system, as the latter tends to screen the former. Polar metals, however, defy this rule and have thus attracted considerable attention as a new class of ferroelectrics exhibiting novel properties. Here, we fabricate a new polar metal film based on the typical ferroelectric material BaTiO3by combining chemical doping and epitaxial strain induced by a substrate. The temperature dependences of the c-axis lattice constant and the second harmonic generation intensity of La-doped BaTiO3films indicate the existence of polar transitions. In addition, through La doping, films become metallic at the polar phase, and metallicity enhancement at the polar state occurs in low-La-doped films. This intriguing behaviour is effectively explained by our first-principles calculations. Our demonstration suggests that the carrier doping to ferroelectric material with epitaxial strain serves as a new way to explore polar metals.

We investigate the surface electronic structures of polar 1T'-MoTe2, the Weyl semimetal candidate realized through the nonpolar-polar structural phase transition, by utilizing the laser angle-resolved photoemission spectroscopy (ARPES) combined with first-principles calculations. Two kinds of domains with different surface band dispersions are observed from a single-crystalline sample. The spin-resolved measurements further reveal that the spin polarizations of the surface and the bulk-derived states show the different domain-dependences, indicating the opposite bulk polarity. For both domains, some segment-like band features resembling the Fermi arcs are clearly observed. The patterns of the arcs present the marked contrast between the two domains, respectively agreeing well with the slab calculation of (0 0 1) and (0 0 -1) surfaces. The present result strongly suggests that the Fermi arc connects the identical pair of Weyl nodes on one side of the polar crystal surface, whereas it connects between the different pairs of Weyl nodes on the other side., 13 pages, 4 figures

We reinvestigate the putative giant spin splitting at the surface of SrTiO3 reported by Santander-Syro et al. [Nature Mat. 13, 1085 (2014)]. Our spin- and angle-resolved photoemission experiments on fractured (001) oriented surfaces supporting a two-dimensional electron liquid with high carrier density show no detectable spin polarization in the photocurrent. We demonstrate that this result excludes a giant spin splitting while it is consistent with the unconventional Rashba-like splitting seen in band structure calculations that reproduce the experimentally observed ladder of quantum confined subbands. Postprint

We report on the formation of a two-dimensional electron gas (2DEG) at the bare surface of (111) oriented SrTiO3. Angle resolved photoemission experiments reveal highly itinerant carriers with a sixfold symmetric Fermi surface and strongly anisotropic effective masses. The electronic structure of the 2DEG is in good agreement with self-consistent tight-binding supercell calculations that incorporate a confinement potential due to surface band bending. We further demonstrate that alternate exposure of the surface to ultraviolet light and atomic oxygen allows tuning of the carrier density and the complete suppression of the 2DEG.

The origin of the 2D electron gas (2DEG)stabilized at the bare surface of SrTiO3 (001) is investigated. Using high-resolution angle-resolved photoemission and core-level spectroscopy, it is shown conclusively that this 2DEG arises from light-induced oxygen vacancies. The dominant mechanism driving vacancy formation is identified, allowing unprecedented control over the 2DEG carrier density.