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Abstract We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As $$_x$$ x P $$_{1-x}$$ 1 - x ) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As $$_x$$ x P $$_{1-x}$$ 1 - x energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As $$_x$$ x P $$_{1-x}$$ 1 - x atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of $$10^3$$ 10 3 A/W. The speed of the GC-FET detector’s response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures.

We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers (MC) as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection.

We report on the design, optimization and fabrication of a plasmon-assisted terahertz (THz) photoconductive antenna (PCA) for THz pulse generation at low-power optical pumps. The PCA features a high aspect ratio dielectric-embedded plasmonic Au grating placed into the photoconductive gap. Additionally, Si3N4-passivation of the photoconductor and the Al2O3-antireflection coating are used to further enhance antenna performance. For comparative analysis of the THz photocurrents, THz waveforms and THz power spectra we introduced the THz photocurrent δi and the THz power enhancement δTHz factors, which are defined as ratios between the THz photocurrents and the THz power spectra for the plasmon-assisted and conventional PCAs. We demonstrated superior performance of the plasmon-assisted PCA δi=30 and δTHz=3 ⋅ 103 at the lowest optical pump power of P=0.1 mW. Nevertheless the increase to P=10 mW lead to monotonically decrease in the both values to δi=2 and δTHz=102 due to screening effects. These results demonstrate a strong potential of the plasmonic PCA for operation with low-power lasers, thus, opening opportunities for the development of portable and cost-effective THz spectrometers and imaging systems.

A self-consistent analytical model describing transport processes in quantum well infrared photodetectors (QWIPs) under dark conditions is presented. The electric field and charge distributions as well as the dark current-voltage characteristics are calculated.

We report on the design, evaluation and fabrication of the sub-terahertz (sub-THz) detector using a GaAs gated field-effect transistor with a buried quasi-two-dimensional electron gas created by the self-assembled Sn-nanothreads (Sn-NTs) embedded into the GaAs channel. This GaAs–Sn-NTs detector efficiently detects a sub-THz radiation at cryogenic and room temperatures (CT and RT, respectively). Two possible detection mechanisms are the bolometric mechanism due to electron heating by the sub-THz radiation and the mechanism related to the rectification of the decayed plasmonic oscillations. We developed a classical self-consistent device model of the bolometric detection involving the Poisson equation and the electron density of states and estimated responsivity and noise-equivalent power of the detector. The measured I–V characteristics and the photoresponse to the incident sub-THz radiation at CT and RT are in reasonable agreement with our model. The detector demonstrates a better performance than semiconductor-based hot-electron bolometers and quantum-well/dot IR and THz photodetectors. [ABSTRACT FROM AUTHOR]

We analyze the electrical modulation of the terahertz (THz) radiation associated with the carrier heating in the graphene-phosphorene (GP) heterostuctures. The heating of the carriers leads to the transfer of a significant fraction of the light carriers from the G-layer to the P-layer with a relatively large carrier effective mass. This might result in a dramatic decrease in the conductivity of the GP-channel that could be used to modulate the incident THz radiation. We demonstrate that the depth of the THz radiation modulation can be large in relatively wide range of the modulation frequencies. [ABSTRACT FROM AUTHOR]

We report on the proposal and the theoretical and experimental studies of the terahertz hot-electron bolometer (THz HEB) based on a gated GaAs structure like the field-effect transistor with the array of parallel Sn nanothreads (Sn-NTs). The operation of the HEB is associated with an increase in the density of the delocalized electrons due to their heating by the incoming THz radiation. The quantum and the classical device models were developed, the quantum one was based on the self-consistent solution of the Poisson and Schrödinger equations, the classical model involved the Poisson equation and density of states omitting quantization. We calculated the electron energy distributions in the channels formed around the Sn-NTs for different gate voltages and found the fraction of the delocalized electrons propagating across the energy barriers between the NTs. Since the fraction of the delocalized electrons strongly depends on the average electron energy (effective temperature), the proposed THz HEB can exhibit an elevated responsivity compared with the HEBs based on more standard heterostructures. Due to a substantial anisotropy of the device structure, the THz HEB may demonstrate a noticeable polarization selectivity of the response to the in-plane polarized THz radiation. The features of the THz HEB might be useful in their practical applications in biology, medicine and material science. [ABSTRACT FROM AUTHOR]

We evaluate the proposed resonant terahertz (THz) detectors on the basis of field-effect transistors (FETs) with split gates, electrically induced lateral p–n junctions, uniform graphene layer (GL) or perforated (in the p–n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET- and PGL-FET-detectors is associated with the rectification of the ac current across the lateral p–n junction enhanced by the excitation of bound plasmonic oscillations in the p- and n-sections of the channel. Using the developed device model, we find the GL-FET- and PGL-FET-detector characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in the PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p–n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity. [ABSTRACT FROM AUTHOR]

We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As[Formula: see text]P[Formula: see text]) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As[Formula: see text]P[Formula: see text] energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As[Formula: see text]P[Formula: see text] atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of [Formula: see text] A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures., (© 2023. The Author(s).)

The atrioventricular node (AVN) is considered a "black box", and the functioning of its dual pathways remains controversial and not fully understood. In contrast to numerous clinical studies, there are only a few mathematical models of the node. In this paper, we present a compact, computationally lightweight multi-functional rabbit AVN model based on the Aliev-Panfilov two-variable cardiac cell model. The one-dimensional AVN model includes fast (FP) and slow (SP) pathways, primary pacemaking in the sinoatrial node, and subsidiary pacemaking in the SP. To obtain the direction-dependent conduction properties of the AVN, together with gradients of intercellular coupling and cell refractoriness, we implemented the asymmetry of coupling between model cells. We hypothesized that the asymmetry can reflect some effects related to the complexity of the real 3D structure of AVN. In addition, the model is accompanied by a visualization of electrical conduction in the AVN, revealing the interaction between SP and FP in the form of ladder diagrams. The AVN model demonstrates broad functionality, including normal sinus rhythm, AVN automaticity, filtering of high-rate atrial rhythms during atrial fibrillation and atrial flutter with Wenckebach periodicity, direction-dependent properties, and realistic anterograde and retrograde conduction curves in the control case and the cases of FP and SP ablation. To show the validity of the proposed model, we compare the simulation results with the available experimental data. Despite its simplicity, the proposed model can be used both as a stand-alone module and as a part of complex three-dimensional atrial or whole heart simulation systems, and can help to understand some puzzling functions of AVN., Competing Interests: The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest., (Copyright © 2023 Ryzhii and Ryzhii.)

Simplified nonlinear models of biological cells are widely used in computational electrophysiology. The models reproduce qualitatively many of the characteristics of various organs, such as the heart, brain, and intestine. In contrast to complex cellular ion-channel models, the simplified models usually contain a small number of variables and parameters, which facilitates nonlinear analysis and reduces computational load. In this paper, we consider pacemaking variants of the Aliev-Panfilov and Corrado two-variable excitable cell models. We conducted a numerical simulation study of these models and investigated the main nonlinear dynamic features of both isolated cells and 1D coupled pacemaker-excitable systems. Simulations of the 2D sinoatrial node and 3D intestine tissue as application examples of combined pacemaker-excitable systems demonstrated results similar to obtained previously. The uniform formulation for the conventional excitable cell models and proposed pacemaker models allows a convenient and easy implementation for the construction of personalized physiological models, inverse tissue modeling, and development of real-time simulation systems for various organs that contain both pacemaker and excitable cells., Competing Interests: The authors have declared that no competing interests exist.

This paper reviews recent advances in the research and development of graphene-based plasmonic metamaterials for terahertz (THz) laser transistors. The authors' theoretical discovery on THz laser transistors in 2007 was realized as a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) in 2018, demonstrating ∼0.1 µW single-mode emission at 5.2 THz and ∼80 µW amplified spontaneous 1-7.6 THz emission at 100 K. To realize room-temperature, dry-cell-battery operating intense THz lasing with fast direct modulation, various approaches based on graphene plasmonic metamaterials are investigated and introduced as real device implementations, including (i) replacement of the laser photonic cavity with plasmonic cavity enormously improving the THz photon field confinement with larger gain overlapping, (ii) introduction of THz amplification of stimulated emission via current-driven graphene Dirac plasmons (GDPs), and (iii) controlling the parity and time-reversal symmetry of GDPs enabling ultrafast direct gain-switch modulation. Possible real device structures and design constraints are discussed and addressed toward coherent light sources applicable to future 6G- and 7G-class THz wireless communication systems., (© 2022 Taiichi Otsuji et al., published by De Gruyter, Berlin/Boston.)

We propose the far-infrared and terahertz emitting diodes (FIR-EDs and THz-EDs) based on the graphene-layer/black phosphorus (GL/b-P) and graphene-layer/MoS 2 (GL/MoS 2 ) heterostructures with the lateral hole and vertical electron injection and develop their device models. In these EDs, the GL serves as an active region emitting the FIR and THz photons. Depending on the material of the electron injector, the carriers in the GL can be either cooled or heated dictated by the interplay of the vertical electron injection and optical phonon recombination. The proposed EDs based on GL/b-P heterostructures can be efficient sources of the FIP and THz radiation operating at room temperature.

We develop the device models for the far-infrared interband photodetectors (IPs) with the graphene-layer (GL) sensitive elements and the black Phosphorus (b-P) or black-Arsenic (b-As) barrier layers (BLs). These far-infrared GL/BL-based IPs (GBIPs) can operate at the photon energies ℏ Ω smaller than the energy gap, Δ G , of the b-P or b-As or their compounds, namely, at ℏ Ω ≲2 Δ m. The GBIP operation spectrum can be shifted to the terahertz range by increasing the bias voltage. The BLs made of the compounds b-As G /3 corresponding to the wavelength range λ ≳(6-12) μ m. The GBIP operation spectrum can be shifted to the terahertz range by increasing the bias voltage. The BLs made of the compounds b-As x B 1-x with different x, enable the GBIPs with desirable spectral characteristics. The GL doping level substantially affects the GBIP characteristics and is important for their optimization. A remarkable feature of the GBIPs under consideration is a substantial (over an order of magnitude) lowering of the dark current due to a partial suppression of the dark-current gain accompanied by a fairly high photoconductive gain. Due to a large absorption coefficient and photoconductive gain, the GBIPs can exhibit large values of the internal responsivity and dark-current-limited detectivity exceeding those of the quantum-well and quantum-dot IPs using the intersubband transitions. The GBIPs with the b-P and b-As BLs can operate at longer radiation wavelengths than the infrared GL-based IPs comprising the BLs made of other van der Waals materials and can also compete with all kinds of the far-infrared photodetectors.