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We present results on the direct monolithic integration of III–V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 × 5 um2 emitter) with ft and fmax ≫ 200GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.

We present results on the direct monolithic integration of III–V devices and Si CMOS on a silicon substrate. Through optimization of device fabrication and material growth processes III–V devices with electrical performance comparable to devices grown on native III–V substrates were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). While the results presented here are for InP HBTs, our direct heterogeneously integration approach is equally applicable to other III–V electronic (FETs, HEMTs) and opto-electronic (photodiodes, VSCLS) devices and opens the door to a new class of highly integrated, high performance, mixed signal circuits.

14515 Background: AVN944 is an inhibitor of inosine monophosphate dehydrogenase (IMPDH), an enzyme that catalyzes the rate- limiting step in guanine nucleotide synthesis. Guanosine triphosphate (GT...