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Corona virus Disease-2019 (COVID-19) diketahui menyebabkan infeksi saluran nafas pada manusia mulai dari batuk pilek hingga yang lebih serius seperti Middle East Respiratory Syndrome (MERS) dan Severe Acute Respiratory Syndrome (SARS). Persebaran COVID-19 meningkat semakin cepat melalui tetesan air liur atau keluar dari hidung ketika orang yang terinfeksi batuk atau bersin. Virus tersebut sangatlah meluas dengan cepat yang berdampak pada seluruh dunia, bukan hanya dalam pandangan kesehatan saja tetapi dalam ekonomi juga terdampak baik ekonomi Negara maupun masyarakatnya. Dimana keuangan masyarakat Desa Cagak Agung Kecamatan Cerme Gresik mengalami guncangan dalam masalah perekonomiannya. Berdasakan permasalahan tersebut, penulis melakukan pengabdian pada masyarakat Desa Cagak Agung kusunya pada Rt 02 Rw 01 melalui kegiatan Kuliah Kerja Nyata (KKN) Mandiri Tahun 2020 Universitas Muhammadiyah Gresik Era Covid-19. Untuk memberikan edukasi bahwasanya masyarakat Desa Cagak Agung Rt 02 Rw 01 banyak sekali yang bekerja di perusahaan kemudian di rumahkan sementara karena dalam masa lockdown, sehingga pemasukan yang dialami oleh masyarakat mengalami penurunan bahkan ada juga yang tidak mencukupi kebutuhannya sehinga banyak masyarakat yang mengeluh akan keadaan dan kondisi seperti ini untuk mencari peluang kerja sangatlah susah dicari, sehingga penulis memberikan sebuah edukasi maupun saran dengan apa yang telah dikeluhkan oleh masyarakat. Pemberian edukasi kepada sasaran penulis ialah salah satu warga budidaya ternak ikan lele dan edukasi yang di salurkan dengan system daring atau via online untuk memberikan edukasi bagaimana pemanfaatan tong bekas untuk dijadikan alat pengiriman agar dapat meminimalisir biaya pengiriman.

We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm2 in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm2) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm2), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm2), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H (≈ 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.

The optical emission from plasma produced by excimer laser (ArF, λ = 193 nm) ablation of Si, SiO and Si3N4 targets was studied in the visible range. We present results of the time integrated optical spectroscopy measurements and time-of-flight analysis of the particle expansion dynamics. Both methods show the formation of diatomic molecules within the laser induced plasma plume. The velocities of the ejected species are strongly affected by a chemical reaction inside the plasma plume.

The time of flight measurements by optical and ion-probe methods have been performed during plasma expansion induced by picosecond laser pulse. The time and angle resolved measurements show two distinct ion and electron populations. Faster species show a broad angular distribution with shift of this distribution towards the laser beam. Slow species show a forward direction in space. The overall positive current was observed in the forward direction relatively to the target. At the higher angles, plasma expansion is characterized by time/space charge separation. The spatial edge and the time trailing edge of the plume exhibit overall neutrality.

The deposition parameters used for the preparatiion of thin YBaCuO films on MgO substrates by the pulsed laser ablation method are of the utmost importance in controlling the microstructure. The film quality is mainly controlled by the deposition rate, the laser fluence and the substrate temperature. The best quality films are produced for low enough values of the deposition parameters where well-oriented grain growth occurs with the c axis perpendicular to the substrate surface. Higher values of the deposition parameters result in higher nucleation rates leading to a continuous loss of epitaxy up to the formation of randomly oriented nanocrystalline films and hence to a strong current leakage at grain boundaries which lowers the critical temperature.

The laser-induced plasma plume dynamics for picosecond laser ablation of silicon and YBaCuO targets have been studied using optical time-of-flight spectra. The picosecond pulse ablation allows one to reduce the temperature and velocity dispersion of the ablated species. The expansion velocities of the ionized species show an inverse square root dependence vs. the atomic mass and are proportional to their charge. The velocities of the neutral atoms exhibit a much weaker dependence vs. atomic mass. The formation of a charge separation region was observed during plasma plume expansion. These experimental results support the Coulomb expansion mechanism of the laser-induced plasma.

Thin films of Y1Ba2Cu3O7-x were deposited via pulsed laser ablation onto MgO and YSZ (Yttria-Stabilized Zirconia) substrates. The use of an IR Nd:YAG laser leads to nonstoichiometric deposition. The best quality superconducting films were deposited by means of UV excimer laser ablation ((lambda) equals 308 nm). These films were strongly orientated with c-axis perpendicular to (100) substrate. The film quality was found to be strongly dependent on substrate temperature, oxygen pressure, sample cooling rate and laser fluence. The deposition process was characterized by the time-resolved spectroscopic measurements of the emission from YO molecules.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.