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37th European Photovoltaic Solar Energy Conference and Exhibition; 633-635, This paper deals with the behavior of Cu(In,Ga)Se2 based solar cells at low temperatures. Special at tent ion is given to the differences between samples from a standard process and with PDT, especially with respect to the back contact barrier. This barrier in form of a Schot tky junct ion is responsible for a t ransistor-like behavior at low temperatures. The height of this barrier can be calculated from IV(T) curves. With the use of dark annealing experiments it could be shown that metastable changes of the doping in the absorber play an important role for the low temperature behavior. Higher doping leads to a lower amplificat ion factor. Aging t reatments with a negat ive bias causes an increase of the barrier height and lower a decrease of the doping concent ration, leading to a higher amplificat ion factor with a blocking of the forward current even at high temperatures.

36th European Photovoltaic Solar Energy Conference and Exhibition; 667-669, In this work, the influence of a degradation through dark annealing on Cu(In,Ga)Se2 based solar cells was investigated. In particular, the focus was on the intermediate state with regard to the phototransistor behavior. In previous publications, a back contact barrier was postulated as origin of this effect. The height of this barrier can be estimated from IV curves as well as from admittance spectroscopy at low temperatures. It could be shown that a dark annealing lowers the doping density of the absorber, enlarging the space charge region. Is there a back contact barrier in form of a Schottky junction both space charge regions can touch and a so-called punch-through-effect occurs. Especially in view of the attempt to achieve lower absorber thicknesses, the observed effect will gain much more relevance in the case of non-ohmic back contacts.

Einleitung: Die Sternum-Osteomyelitis stellt eine schwerwiegende Komplikation mit hoher Mortalität nach kardiochirugischen Eingriffen dar. Bei multimodalen Therapieoptionen ist die richtige Indikationsstellung von großer Bedeutung. Methoden: In dieser retrospektiven Studie wurde eine Patientenkohorte[zum vollständigen Text gelangen Sie über die oben angegebene URL], 48. Jahrestagung der Deutschen Gesellschaft der Plastischen, Rekonstruktiven und Ästhetischen Chirurgen (DGPRÄC), 55. Jahrestagung der Österreichischen Gesellschaft für Plastische, Ästhetische und Rekonstruktive Chirurgie, 22. Jahrestagung der Vereinigung der Deutschen Ästhetisch-Plastischen Chirurgen (VDÄPC)

33rd European Photovoltaic Solar Energy Conference and Exhibition; 1013-1016, CIGS/CdS thin films and completed devices demonstrate pronounced metastable behavior. On device level, metastabilities can be detected by photoluminescence (PL) imaging. After hot light soaking (HLS) PL intensity of devices increases correlating to the improved Voc. To the contrary, dark annealing degrades PL intensity which corresponds to the reduced Voc values. A question which is still open and being addressed in this contribution is what determines PL intensity on CIGS/CdS thin films. In order to build an appropriate model, PL images are correlated to vibrating Kelvin probe measurements. It has been found that the presence of the CdS layer and induced band-bending at the absorber/buffer interface determine the PL signal from the discussed thin films. The origin of band-bending can be still debated. Furthermore, the impact of band-bending on P1 shunting and the lateral conductivity of the CIGS layer has been investigated. Dark current-voltage measurements on test thin films with a broad P1 scribe (300 μm) indicated that P1 shunting can be modified by the pn-junction formation and certain sample treatments. Moreover, the contribution of P1 shunting to the overall shunt conductance was estimated. It has been shown that shunt conductance of studied devices is not dominated by the P1 shunt and shows perfect stability during long term endurance test.

This paper presents articulatory data on the production of /l/ in various environments in Dutch, and shows that the direction of movement of the tongue dorsum varies across environments. This makes it impossible to measure tongue position at the peak of the dorsal gesture. We argue for an alternative method in such cases: measurement of position of one articulator at a time point defined by the gesture of another. We present new data measured this way which confirms a previous finding on the articulation of Dutch /l/.

Item does not contain fulltext Articulatory data are used to address the question of whether Dutch schwa insertion is a phonological or a phonetic process. By investigating tongue tip raising and dorsal lowering, we show that /l/ when it appears before inserted schwa is a light /l/, just as /l/ before an underlying schwa is, and unlike the dark /l/ before a consonant in non-insertion productions of the same words. The fact that inserted schwa can condition the light/dark /l/ alternation shows that schwa insertion involves the phonological insertion of a segment rather than phonetic adjustments to articulations.

In additional experiments on characterizing cytoplasmic proteins in Neurospora crassa (N. crassa) the enzyme and isoenzyme patterns of this fungus were analyzed. By agar gel electrophoresis the following isoenzymes were found in several N. crassa strains: 5 isoenzymes of Lactate dehydrogenase, 5 isoenzymes of Glycerolphosphate dehydrogenase, 5 isoenzymes of Glutamate dehydrogenase and 3 isoenzymes of Malate dehydrogenase. Carboxylesterase was separated into 4 fractions by means of agar gel electrophoresis. By immunoelectrophoresis some precipitation arcs proved to be carrying enzymatic activities. Depending on the tested N. crassa strain the activity of Carboxylesterase could be localized in 2–4 precipitation arcs. ρ-Diphenoloxidase was found as an elongated precipitation line by means of immunoelectrophoresis. Ribonuclease was seen in 2 precipitation arcs on the anodic and cathodic side of the starting point. 2 isoenzymes of Peroxidase were demonstrated in N. crassa 3a6A. One precipitation arc near the starting point indicated the activity of Catalase.

36th European Photovoltaic Solar Energy Conference and Exhibition; 645-648, The reliability of different CIGS devices (lab scale cells and mini-modules with P1/P2/P3 interconnects) has been investigated after accelerated aging treatments. These treatments consisted in maintaining the sample devices inside a climate chamber at high temperatures and in some cases applying on them a voltage bias reverse or forward. The degradation of the performance was studied with optical and electrical characterization techniques (I-V, C-V and Photoluminescence imaging), and the characteristics of both types of devices were compared before and after the accelerated ageing treatment was applied. Our findings suggest that the degradation of both device types is similar. In both cases the open circuit voltage, the fill factor and the efficiency were reduced, the only exception being the devices that were treated with a forward bias (both mini-modules and lab scale cells), in which these parameters were found to be stable during the treatment. Additionally, one difference was found during the treatment under a reverse voltage bias, namely that the saturation current was reduced in the case of mini-modules but not in the case of lab scale cells.