21 results on '"Lyu, Deyuan"'
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2. Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
3. Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers
4. Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling
5. Electrical control of the switching layer in perpendicular magnetic tunnel junctions with atomically thin Ir dusting
6. Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures
7. Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices
8. L10 FePd-based perpendicular magnetic tunnel junctions with 65% tunnel magnetoresistance and ultralow switching current density.
9. FePd Single Layer and Synthetic Antiferromagnet with Low Damping and Crystalline Perpendicular Magnetic Anisotropy on Amorphous Si/SiO2 Wafers
10. Sputtered L 1 0 ‐FePd and its Synthetic Antiferromagnet on Si/SiO 2 Wafers for Scalable Spintronics
11. Temperature-dependent perpendicular anisotropy and Gilbert damping of L10−FePd films: Role of noble-metal buffer layers
12. Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions
13. In-situ TEM and Spectroscopy Studies of Nanoscale Perpendicular Magnetic Tunnel Junction
14. Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor δ -TaN
15. Ultralow Current Switching of Synthetic‐Antiferromagnetic Magnetic Tunnel Junctions Via Electric‐Field Assisted by Spin–Orbit Torque
16. Sputtered L10‐FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics.
17. Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling
18. Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers
19. Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy
20. Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown
21. The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory
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