Search

Epitaxial semiconductor nanowires with charge carrier holes can exhibit an infinite mass of holes and spin-locking due to chiral spectrum linear in momentum and spin. The criterion for emergence of topological superconductivity and Majorana fermions in these wires coupled to an s-type superconductors is the same as in topological insulators, and opposite to the criterion of onset of Majorana modes in quantum wires with parabolic spectrum in the presence of spin-orbit interactions., Comment: 5 pages, 3 figures

Search for parafermions and Fibonacci anyons, which are excitations obeying non-Abelian statistics, is driven both by the quest for deeper understanding of nature and prospects for universal topological quantum computation. However, physical systems that can host these exotic excitations are rare and hard to realize in experiments. Here we study the domain walls and the edge states formed in spin transitions in the fractional quantum Hall effect. Effective theory approach and exact diagonalization in a disk and torus geometries proves the existence of the counter-propagating edge modes with opposite spin polarizations at the boundary between the two neighboring regions of the two-dimensional electron liquid in spin-polarized and spin-unpolarized phases. By analytical and numerical analysis, we argue that these systems can host parafermions when coupled to an s-wave superconductor and are experimentally feasible. We investigate settings based on $\nu=\frac{2}{3}$, $\nu=\frac{4}{3}$ and $\nu=\frac{5}{3}$ spin transitions and analyze spin-flipping interactions that hybridize counter-propagating modes. Finally, we discuss spin-orbit interactions of composite fermions., Comment: 17 pages, 12 figures

In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor $\nu=5/2$. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic. Here we show that the pressure induced paired-to-nematic transition also develops at $\nu=7/2$, demonstrating therefore this transition in both spin branches of the second orbital Landau level. However, we find that pressure is not the only parameter controlling this transition. Indeed, ground states consistent with those observed under pressure also develop in a sample measured at ambient pressure, but in which the electron-electron interaction was tuned close to its value at the quantum critical point. Our experiments suggest that electron-electron interactions play a critical role in driving the paired-to-nematic transition.

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one, in which impurity disorder strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and the other, where Majorana fermions are protected by disorder-robust superconductor gap. In this work we predict a third class of topological superconductivity and Majorana modes, in which they appear exclusively in the presence of impurity disorder. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry leading to a gap in a single-particle spectra. Disorder introduces states into the gap and enables conductance and proximity-induced superconductivity via the in-gap states. We show that disorder-enabled topological superconductivity can be realized in a quantum Hall ferromagnet, when helical domain walls are coupled to an s-wave superconductor. Solving a general quantum mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we show that disorder-induced Majorana modes emerge in a setting of the quantum Hall ferromagnetic transition in a CdMnTe quantum wells at a filling factor $\nu=2$. Recent experiments on transport through electrostatically controlled single domain wall in this system indicated the vital role of disorder in conductance, but left an unresolved question whether this could intrinsically preclude generation of Majorana fermions. The proposed resolution of the problem, demonstrating emergence of Majorana fermions exclusively due to impurity disorder, opens a path forward. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana modes. Similar physics can emerge for ferromagnetic transitions in the fractional quantum Hall regime leading to the formation and control of higher order non-Abelian excitations., Comment: Connection to existing experiment discussed in more detail. 27 preprint pages, 11 figures, Supplemental material: 7 pages, 1 figure. Submitted to Physical Review X

The reentrant integer quantum Hall effects (RIQHE) are due to formation of electronic crystals. We show analytically and numerically that topological textures in the charge density distribution in these crystals in the vicinity of charged defects strongly reduce energy required for current-carrying excitations. The theory quantitatively explains sharp insulator-metal transitions experimentally observed in RIQHE states. The insulator to metal transition in RIQHE emerges as a thermodynamic unbinding transition of topological charged defects., Comment: 13 pages + Supplemental materials

Monolayers of semiconducting van der Waals solids, such as transition metal dichalcogenides (TMDs), acquire significant electric polarization normal to the layers when placed on a substrate or in a heterogeneous stack. This causes linear coupling of electrons to electric fields normal to the layers. Irradiation at oblique incidence at frequencies above the gap causes interband transitions due to coupling to both normal and in-plane ac electric fields. The interference between the two processes leads to sizable in-plane photocurrents and valley currents. The direction and magnitude of currents is controlled by light polarization and is determined by its helical or non-helical components. The helicity-dependent ballistic current arises due to asymmetric photogeneration. The non-helical current has a ballistic contribution (dominant in sufficiently clean samples) caused by asymmetric scattering of photoexcited carriers, and a side-jump contribution. Magneto-induced photocurrent is due to the Lorentz force or due to intrinsic magnetic moment related to Berry curvature., Comment: 5 pages, 2 figures. Submitted to Physical Review Letters

At each of the boundaries of the two-dimensional (2D) rectangular conductor parallel to the electric current there arises a stripe with an electric field transverse to the current and a 100% electron spin polarization. The two stripes have opposite spin orientations and opposite directions of electric fields. The magnitudes of the fields, directly related to the spin current if the spin relaxation is negligible, are the same. The periphery stripes are separated by a center-stripe, in which the magnitude and direction of the electric field depend on the ratio of the skew scattering and side jump spin currents. The spin polarization is zero on the center-line and reaches +1 or -1 at the boundaries between the central and periphery stripes. Weak relaxation of the z-component of spin normal to the 2D plane modifies the magnitudes of the spin polarization and fields, with +1 (-1) spin polarization persisting at the edges of the sample. Favorable experimental settings, in which the electron spin relaxation of the z-component of spin is suppressed but the spin current is not, are discussed.

Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then stored, most commonly, by encoding it in the orientation of magnetic domains of a computer hard disk. The key obstacle to a more intimate integration of magnetic materials into devices and circuit processing information is a lack of efficient means to control their magnetization. This is usually achieved with an external magnetic field or by the injection of spin-polarized currents. The latter can be significantly enhanced in materials whose ferromagnetic properties are mediated by charge carriers. Among these materials, conductors lacking spatial inversion symmetry couple charge currents to spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spin polarization tunable by local electric fields. Here we show that magnetization of a ferromagnet can be reversibly manipulated by the SO-induced polarization of carrier spins generated by unpolarized currents. Specifically, we demonstrate domain rotation and hysteretic switching of magnetization between two orthogonal easy axes in a model ferromagnetic semiconductor., Comment: 10 pages including supplemental material

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material., Comment: 5 pages, 4 figure

In a recent Letter, Bergsten and co-authors have studied the resistance oscillations with gate voltage and magnetic field in arrays of semiconductor rings and interpreted the oscillatory magnetic field dependence as Altshuler-Aronov-Spivak (AAS) oscillations and oscillatory dependence on gate voltage as the Aharonov-Casher (AC) effect. This Comment shows that Bergsten and co-authors incorrectly identified AAS effect as a source of resistance oscillations in magnetic field, that spin relaxation in their experimental setting is strong enough to destroy oscillatory effects of spin origin, and that the oscillations are caused by changes in carrier density and the Fermi energy by gate, and are unrelated to spin., Comment: Comment, submitted to Physical Review Letters

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion regime in a single-top-gate transistor configuration. We have observed large size quantization and Coulomb charging energies over 10meV. This quantum dot design can be especially important for scalable quantum computing., Comment: 5 figures

We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot, in contrast to depletion mode dots based on expelling of electrons from multi-electron dots by gates. The quantum computer architectures based on depletion dots are confronted by several challenges making scalability difficult. These challenges can be successfully met by the approach based on ehnancement mode, capable of producing square array of dots with versatile functionalities. These functionalities allow transportation of qubits, including teleportation, and error correction based on straightforward one- and two-qubit operations. We describe physical properties and demonstrate experimental characteristics of enhancement quantum dots and single-electron transistors based on InAs/GaSb composite quantum wells. We discuss the materials aspects of quantum dot quantum computing, including the materials with large spin splitting such as InAs, as well as perspectives of enhancement mode approach in materials such as Si., Comment: 38 pages, 7 figures

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wavefunctions through asymmetric e-e and e-h exchange interactions.

We obtain a microscopic description of the interaction between electron spins in bulk semiconductors and in pairs of semiconductor quantum dots. Treating the k.p band mixing and the Coulomb interaction on the same footing, we obtain in the third order an asymmetric contribution to the exchange interaction arising from the coupling between the spin of one electron and the relative orbital motion of the other. This contribution does not depend on the inversion asymmetry of the crystal. We find that it is ~0.001 of the isotropic exchange, which is of interest in quantum information. Detailed evaluations are given for several quantum dot systems., Comment: 4 pages

We investigate the applicability of spin polarization measurements using Andreev reflection in a point contact geometry in heavily doped dilute magnetic semiconductors, such as (Ga,Mn)As. While we observe conventional Andreev reflection in non-magnetic (Ga,Be)As epilayers, our measurements indicate that in ferromagnetic (Ga,Mn)As epilayers with comparable hole concentration the conductance spectra can only be adequately described by a broadened density of states and a reduced superconducting gap. We suggest that these pair-breaking effects stem from inelastic scattering in the metallic impurity band of (Ga,Mn)As and can be explained by introducing a finite quasiparticle lifetime or a higher effective temperature. For (Ga,Mn)As with 8% Mn concentration and 140 K Curie temperature we evaluate the spin polarization to be 83+/-17%. PACS numbers: 72.25.Dc,72.25.Mk,74.45.+c

The optically induced indirect exchange interaction between spins in two quantum dots is investigated theoretically. We present a microscopic formulation of the interaction between the localized spin and the itinerant carriers including the effects of correlation, using a set of canonical transformations. Correlation effects are found to be of comparable magnitude as the direct exchange. We give quantitative results for realistic quantum dot geometries and find the largest couplings for one dimensional systems., Comment: 4 pages, 3 figures

We report experiments on gated Y-branch switches made from InAs ballistic electron wave guides. We demonstrate that gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Such previously unexpected phenomenon provides evidence of steering the electron wave function in a multi-channel transistor structure., Comment: 15 pages, including 3 figures

Charged carriers with different spin states are spatially separated in a two-dimensional hole gas. Due to strong spin-orbit interaction holes at the Fermi energy have different momenta for two possible spin states travelling in the same direction and, correspondingly, different cyclotron orbits in a weak magnetic field. Two point contacts, acting as a monochromatic source of ballistic holes and a narrow detector in the magnetic focusing geometry are demonstrated to work as a tunable spin filter., Comment: 4 pages, 2 figures

Using singly connected rings with a collimating contact to current leads, we have observed the spin quantum beating in the Aharonov-Bohm conductance oscillations. We demonstrate that the beating is a result of the superposition of two independent interference patterns associated with two orthogonal spin chiral states arising from intrinsic spin-orbit interactions. Our work provides the conclusive evidence of the spin Berry's phase in the conductance of quantum rings., Comment: pdf-file, 4 figures attached, submitted to Physical Review Letters

In situ control of spin-orbit coupling in coherent transport using a clean GaAs/AlGaAs 2DEG is realized, leading to a gate-tunable crossover from weak localization to antilocalization. The necessary theory of 2D magnetotransport in the presence of spin-orbit coupling beyond the diffusive approximation is developed and used to analyze experimental data. With this theory the Rashba contribution and linear and cubic Dresselhaus contributions to spin-orbit coupling are separately estimated, allowing the angular dependence of spin-orbit precession to be extracted at various gate voltages., Comment: related papers at http://marcuslab.harvard.edu

We study the mechanism of nuclear spin relaxation in quantum dots due to the electron exchange with 2D gas. We show that the nuclear spin relaxation rate is dramatically affected by the Coulomb blockade and can be controlled by gate voltage. In the case of strong spin-orbit coupling the relaxation rate is maximal in the Coulomb blockade valleys whereas for the weak spin-orbit coupling the maximum of the nuclear spin relaxation rate is near the Coulomb blockade peaks., Comment: 4 pages, 3 figures

The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the \rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holstein's model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport., Comment: 29 pages, 20 figures

We report here a detailed study of AC/DC magnetization and longitudinal/transverse transport properties of La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystals below $T_{c}$ = 121 K. We find that the resistivity upturn below 40 K is related to the reentrant spin glass phase at the same temperature, accompanied by additional anomalous Hall effects. The carrier concentration from the ordinary Hall effects remains constant during the transition and is close to the nominal doping level (0.4 holes/Mn). The spin glass behavior comes from the competition between ferromagnetic double exchange and antiferromagnetic superexchange interactions, which leads to phase separation, i.e. a mixture of ferromagnetic and antiferromagnetic clusters, representing the canted antiferromagnetic state., Comment: 5 pages, 5 figures, submitted to Phys. Rev. B

As in conventional ferromagnets, the Hall resistivity rho_xy of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal exhibits both ordinary and anomalous contributions at low temperature. However, these contributions, unexpectedly, have opposite signs. Near Tc, the ordinary contribution is no longer evident and rho_xy is solely determined by the sample magnetization, reaching an extremum at approximately 40% of the saturated magnetization. A new model for the anomalous Hall effect, incorporating the quantal phase accumulated by double-exchange, three-site hopping reproduces this result. Below Tc, rho_xy reflects the competition between normal and anomalous Hall effects., Comment: 4 pages, 4 figures, Companion Letter cond-mat/9904331

A microscopic picture of charge transport in manganites is developed, with particular attention being paid to the neighborhood of the ferromagnet-to- paramagnet phase transition. The basic transport mechanism invoked is inelastically-assisted carrier hopping between states localized by magnetic disorder. In the context of the anomalous Hall effect, central roles are played by the Pancharatnam and spin-orbit quantal phases., Comment: 4 pages, 1 figure; Companion Letter cond-mat/9904332