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44 results on '"Luo, Xuyi"'

2. n-type charge transport in heavily p-doped polymers

Author

Liang, Zhiming, Choi, Hyun Ho, Luo, Xuyi, Liu, Tuo, Abtahi, Ashkan, Ramasamy, Uma Shantini, Hitron, J. Andrew, Baustert, Kyle N., Hempel, Jacob L., Boehm, Alex M., Ansary, Armin, Strachan, Douglas R., Mei, Jianguo, Risko, Chad, Podzorov, Vitaly, and Graham, Kenneth R.

Published
2021
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5. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Author

Jiang, Zhouhang, primary, Guo, Zixiang, primary, Luo, Xuyi, primary, sayed, munazza, primary, Faris, Zubair, primary, Mulaosmanovic, Halid, primary, duenkel, stefan, primary, soss, steven, primary, beyer, sven, primary, gong, xiao, primary, kurinec, santosh, primary, Narayanan, Vijaykrishnan, primary, Amrouch, Hussam, primary, zhang, enxia, primary, Fleetwood, Daniel M., primary, Schrimpf, Ronald D., primary, and Ni, Kai, primary

Published
2023
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6. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Author

Li, Kan, primary, Luo, Xuyi, additional, Rony, M. W., additional, Gorchichko, Mariia, additional, Hiblot, Gaspard, additional, Van Huylenbroeck, Stefaan, additional, Jourdain, Anne, additional, Alles, Michael L., additional, Reed, Robert A., additional, Zhang, En Xia, additional, Fleetwood, Daniel M., additional, and Schrimpf, Ronald D., additional

Published
2023
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7. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory

Author

Jiang, Zhouhang, Guo, Zixiang, Luo, Xuyi, Sayed, Munazza, Faris, Zubair, Mulaosmanovic, Halid, Duenkel, Stefan, Soss, Steven, Beyer, Sven, Gong, Xiao, Kurinec, Santosh, Narayanan, Vijaykrishnan, Amrouch, Hussam, Xia Zhang, En, Fleetwood, Daniel M., Schrimpf, Ronald D., and Ni, Kai

Abstract

In this work, a thorough assessment of the robustness of complementary channel HfO2 ferroelectric FET (FeFET) against total ionizing dose (TID) radiation is conducted, with the goal of determining its suitability for use as high-performance and energy-efficient embedded nonvolatile memory (eNVM) for space applications. We demonstrate that: i) ferroelectric HfO2 thin film is robust against X-ray and proton irradiation; ii) FeFET exhibits a polarization state dependent radiation sensitivity where the high- ${V} {_{\text {TH}}}$ (HVT) state sees noticeable negative ${V} {_{\text {TH}}}$ shift and low- ${V} {_{\text {TH}}}$ (LVT) is immune to irradiation, irrespective of the channel type; iii) the state dependence is ascribed to the depolarization field in the HVT, which points toward the channel and facilitates the transport and trapping of radiation-generated holes close to the channel. In the future, radiation hardening techniques need to be considered.

Published
2024
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8. Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated With Si Ions

Author

Luo, Xuyi, Montes, Jossue, Koukourinkova, Sabina D., Vaandrager, Bastiaan L., Bielejec, Edward S., Vizkelethy, Gyorgy, Schrimpf, Ronald D., Fleetwood, Daniel M., and Zhang, En Xia

Abstract

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17-MeV Si ions are investigated via current–voltage, low-frequency (LF) noise, and deep level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base–collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent LF 1/f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Our results show that DLTS and 1/f noise measurements can provide complementary information about defects in linear bipolar devices.

Published
2024
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11. Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors

Author

Guo, Zixiang, primary, Li, Kan, additional, Li, Xun, additional, Luo, Xuyi, additional, Zhang, En Xia, additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Fleetwood, Daniel M., additional, Chasin, A., additional, Mitard, J., additional, and Linten, D., additional

Published
2023
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12. Increasing the Strength, Hardness, and Survivability of Semiconducting Polymers by Crosslinking

Author

Chen, Alexander X., primary, Hilgar, Jeremy D., additional, Samoylov, Anton A., additional, Pazhankave, Silpa S., additional, Bunch, Jordan A., additional, Choudhary, Kartik, additional, Esparza, Guillermo L., additional, Lim, Allison, additional, Luo, Xuyi, additional, Chen, Hu, additional, Runser, Rory, additional, McCulloch, Iain, additional, Mei, Jianguo, additional, Hoover, Christian, additional, Printz, Adam D., additional, Romero, Nathan A., additional, and Lipomi, Darren J., additional

Published
2022
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15. Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs

Author

Toguchi, Shintaro, primary, Zhang, En Xia, additional, Rony, Mohammed W., additional, Luo, Xuyi, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Moreau, Stephane, additional, Cheramy, Severine, additional, Batude, Perrine, additional, Brunet, Laurent, additional, Andrieu, Francois, additional, and Alles, Michael L., additional

Published
2022
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17. Acceptor Moieties With Extended Conjugation For Semiconducting Polymers

Author

Luo, Xuyi

Subjects
30306 Synthesis of Materials, FOS: Materials engineering, FOS: Chemical sciences, 30399 Macromolecular and Materials Chemistry not elsewhere classified, 91205 Functional Materials, equipment and supplies
Abstract

New acceptor moieties with extended conjugation have been developed for further understanding of structure-property relationships in donor-acceptor type semiconducting polymers. These diketopyrrolopyrrole or isoindigo based conjugated polymers have been demonstrated as functional materials in organic field effect transistors, photoacoustic imaging and organic electrochemical transistors. With demonstrations of semiconducting molecular design, we hope to spark new research directions especially on deeper investigation of charge transport dependence on chemical structures, and new design strategies of acceptor moieties with extended conjugation could be applied for targeted applications.

Published
2022
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19. Prediction of Early Treatment Response to Initial Conventional Transarterial Chemoembolization Therapy for Hepatocellular Carcinoma by Machine-Learning Model Based on Computed Tomography

Author

Dong, Zhi, primary, Lin, Yingyu, additional, Lin, Fangzeng, additional, Luo, Xuyi, additional, Lin, Zhi, additional, Zhang, Yinhong, additional, Li, Lujie, additional, Li, Zi-Ping, additional, Feng, Shi-Ting, additional, Cai, Huasong, additional, and Peng, Zhenpeng, additional

Published
2021
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21. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Author

Li, Kan, Luo, Xuyi, Rony, M. W., Gorchichko, Mariia, Hiblot, Gaspard, Van Huylenbroeck, Stefaan, Jourdain, Anne, Alles, Michael L., Reed, Robert A., Zhang, En Xia, Fleetwood, Daniel M., and Schrimpf, Ronald D.

Abstract

The temperature dependence of low-frequency noise is investigated from 80 to 320 K for nMOS and pMOS bulk Si FinFETs with SiO2/HfO2 gate dielectrics. Both types of devices show excellent stability during bias-temperature stress and high total-ionizing dose (TID) irradiation. nMOSFET 1/ $f$ noise generally decreases as measuring temperature increases, with three prominent individual defect-related peaks. These peaks in noise magnitude are most likely due to hydrogen shuttling near the interface and/or O vacancies in the HfO2. In contrast, the 1/ $f$ noise in pMOSFETs generally increases with increasing temperature without prominent peaks in noise magnitude. The gate-voltage dependence of low-frequency noise also is evaluated at different temperatures for both device types. Results confirm that the nMOS devices have effective border-trap energy distributions that are nonuniform and generally increase toward midgap, and the pMOS devices have more uniform defect-energy distributions that increase monotonically toward the valence band.

Published
2023
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22. Neural Stimulation In Vitro and In Vivo by Photoacoustic Nanotransducers

Author

Jiang, Ying, primary, Huang, Yimin, additional, Luo, Xuyi, additional, Wu, Jiayingzi, additional, Zong, Haonan, additional, Shi, Linli, additional, Cheng, Ran, additional, Zhu, Yifan, additional, Jiang, Shan, additional, Lan, Lu, additional, Jia, Xiaoting, additional, Mei, Jianguo, additional, Man, Heng-Ye, additional, Cheng, Ji-Xin, additional, and Yang, Chen, additional

Published
2021
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24. Neural Stimulation in vitro and in vivo by Photoacoustic Nanotransducers

Author

Huang, Yimin, primary, Jiang, Ying, additional, Luo, Xuyi, additional, Wu, Jiayingzi, additional, Zong, Haonan, additional, Shi, Linli, additional, Cheng, Ran, additional, Jiang, Shan, additional, Jia, Xiaoting, additional, Mei, Jianguo, additional, Man, Heng-Ye, additional, Cheng, Ji-Xin, additional, and Yang, Chen, additional

Published
2020
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28. Thienoisatin Oligomers as N-Type Molecular Semiconductors

Author

Kadlubowski, Natalie M, Luo, Xuyi, and Mei, Jianguo

Subjects
thienoisoindigo, Semiconductor and Optical Materials, Organic electronics, Organic Chemistry, Polymer and Organic Materials, semiconductor, Polymer Chemistry, bis-thienoisatin
Abstract

Organic field effect transistors (OFETs) offer many advantages compared to traditional inorganic transistors, such as flexibility and solution processability. In this study we design and synthesize two thienoisatin-based organic semiconducting small molecules, then investigate their electronic properties in n-type OFETs. To introduce n-type charge transport, electron-withdrawing dicarbonitrile moieties were installed on thienoisoindigo and bis-thienoisatin molecules, which led to a quinoidal conjugation on thienoisoindigo, while maintaining an aromatic conjugation on the bis-thienoisatin. Following the syntheses, the molecules were characterized to determine highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels via cyclic voltammetry, as well as any potential radical properties.

Published
2018

39. Influence of dopant size and electron affinity on the electrical conductivity and thermoelectric properties of a series of conjugated polymers

Author

Liang, Zhiming, primary, Zhang, Yadong, additional, Souri, Maryam, additional, Luo, Xuyi, additional, Boehm, Alex M., additional, Li, Ruipeng, additional, Zhang, Yan, additional, Wang, Tairan, additional, Kim, Doo-Young, additional, Mei, Jianguo, additional, Marder, Seth R., additional, and Graham, Kenneth R., additional

Published
2018
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40. Neural Stimulation In Vitroand In Vivoby Photoacoustic Nanotransducers

Author

Jiang, Ying, Huang, Yimin, Luo, Xuyi, Wu, Jiayingzi, Zong, Haonan, Shi, Linli, Cheng, Ran, Zhu, Yifan, Jiang, Shan, Lan, Lu, Jia, Xiaoting, Mei, Jianguo, Man, Heng-Ye, Cheng, Ji-Xin, and Yang, Chen

Abstract

Neuromodulation is an invaluable approach for the study of neural circuits and clinical treatment of neurological diseases. Here, we report semiconducting polymer nanoparticles based photoacoustic nanotransducers (PANs) for neural stimulation in vitroand in vivo. Our PANs strongly absorb the nanosecond pulsed laser in the near-infrared second window (NIR-II) and generate localized acoustic waves. PANs are shown to be surface modified and selectively bind onto neurons. PAN-mediated activation of primary neurons in vitrois achieved with ten 3-ns laser pulses at 1,030 nm over a 3-ms duration. In vivoneural modulation of mouse brain activities and motor activities is demonstrated by PANs directly injected into brain cortex. With submillimeter spatial resolution and negligible heat deposition, PAN stimulation is a new non-genetic method for precise control of neuronal activities, opening up potentials in non-invasive brain modulation.

Published
2021
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43. Reversible photo-induced doping in WSe 2 field effect transistors.

Author

Luo X, Andrews K, Wang T, Bowman A, Zhou Z, and Xu YQ

Abstract

We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm-2). Our experimental results have shown that this reversible doping process is mainly attributed to two types of defects in h-BN substrates. Moreover, the photo-doped WSe2 transistors can be stable for more than one week in a dark environment and maintain the high on/off ratio (108) and carrier mobility, since there are no additional impurities involved during the photo-induced doping process to increase the columbic scattering in the conducting channel. These fundamental studies not only provide an accessible strategy to control the charge doping level and then to achieve a writing/erasing process in 2D transistors, but also shed light on the defect states and interfaces in 2D materials.

Published
2019
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44. Critical Role of Surface Energy in Guiding Crystallization of Solution-Coated Conjugated Polymer Thin Films.

Author

Zhang F, Mohammadi E, Luo X, Strzalka J, Mei J, and Diao Y

Abstract

It is well-known that substrate surface properties have a profound impact on the morphology of thin films solution coated atop and the resulting solid-state properties. However, design rules for guiding the substrate selection have not yet been established. Such design rules are particularly important for solution-coated semiconducting polymers, as the substrate-directed thin film morphology can impact charge transport properties by orders of magnitude. We hypothesize that substrate surface energies dictate the thin film morphology by modulating the free energy barrier to heterogeneous nucleation. To test this hypothesis, we systematically vary the substrate surface energy via surface functionalization techniques. We perform in-depth morphology and device characterizations to establish the relationship between substrate surface energy, thin film morphology and charge transport properties, employing donor-acceptor (D-A) conjugated polymers. We find that decreasing the substrate surface energy progressively increases thin film crystallinity, degree of molecular ordering, and extent of domain alignment. Notably, the enhanced morphology on the lowest surface energy substrate leads to a 10-fold increase in the charge carrier mobility. We further develop a free energy model relating the substrate surface energy to the penalty of heterogeneous nucleation from solution in the thin film geometry. The model correctly predicts the experimental trend, thereby validating our hypothesis. This work is a significant step toward establishing design rules and understanding the critical role of substrates in determining morphology of solution-coated thin films.

Published
2018
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