225 results on '"Lundin V"'
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2. A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology
3. Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
4. ACCELERATED RNA SPLICING DYNAMICS DURING ERYTHROID DIFFERENTIATION AMPLIFY MIS-SPLICING IN SF3B1-MUTANT MDS-RS
5. Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range.
6. Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System
7. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
8. O22 - ACCELERATED RNA SPLICING DYNAMICS DURING ERYTHROID DIFFERENTIATION AMPLIFY MIS-SPLICING IN SF3B1-MUTANT MDS-RS
9. Photonic-crystal waveguide for the second-harmonic generation
10. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
11. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
12. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
13. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
14. Metamaterial for efficient second harmonic generation
15. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
16. Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures
17. Optical lattices of excitons in InGaN/GaN quantum well systems
18. X-ray diffraction study of short-period AlN/GaN superlattices
19. Resonance Bragg structure with double InGaN quantum wells
20. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
21. Monolithic white LEDs: Approaches, technology, design
22. Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field
23. Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy
24. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
25. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
26. InGaN nanoinclusions in an AlGaN matrix
27. Energy characteristics of excitons in structures based on InGaN alloys
28. Photoluminescence of localized excitons in InGan quantum dots
29. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
30. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
31. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
32. The role of built-in electric fields in the InGaN/GaN quantum-well emission
33. Parameters of thulium-doped gallium nitride crystals with wurtzite structure
34. Vibrational spectra of AlN/GaN superlattices: Theory and experiment
35. A study of carrier statistics in InGaN/Gan LED structures
36. Kinetics and inhomogeneous carrier injection in InGaN nanolayers
37. Impurity centers of rare-earth ions (Eu, Sm, Er) in GaN wurtzite crystals
38. Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity
39. Edge photoluminescence spectra and the intensity of the intracenter f-f transitions in Er-and Sm-doped GaN crystals
40. Specifics of MOCVD formation of InxGa1−x N inclusions in a GaN matrix
41. On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
42. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
43. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
44. Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm
45. Study of the formation of InGaN quantum dots on GaN surface
46. Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers
47. MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
48. Investigation of MOVPE-grown GaN layers doped with As atoms
49. Effect of annealing on the optical and structural properties of GaN:Er
50. Photoinduced self-organization of gallium nanowires on a GaN surface
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