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Thin film Cu(In,Ga)Se2 (CIGS) solar modules can be grown on flexible and lightweight substrates allowing their direct integration into building elements. Such multifunctional building elements would significantly reduce the installation cost of photovoltaic systems provided that CIGS solar cells with high conversion efficiency can be obtained. Also, there is a need for low cost substrate foil. Mild steel is a promising low cost substrate material due to its excellent mechanical stability and already wide acceptance as component in building envelopes and in numerous other applications. During the growth of the CIGS absorber layer certain elements, e.g. iron, can diffuse from the metallic substrate into the semiconductor deteriorating the device performance. Here we present an effective diffusion barrier and device architecture for processing of highly efficient CIGS solar cells on mild steel substrates. The CIGS absorber layers were grown on mild steel foils by a multistage co-evaporation process at different substrate temperatures. The mild steel substrates were plated with an industrially scalable electrodeposited Ni/Cr bi-layer. The diffusion barrier layer properties of this Ni/Cr coating were investigated directly by measuring the metallic impurities within the absorber by secondary ion mass spectrometry and indirectly by admittance spectroscopy. The Ni/Cr bi-layer was found to be effective up to a nominal CIGS growth temperature of 500 °C. A certified cell efficiency of 18.0% was achieved on a Ni/Cr coated mild steel substrate using a low temperature CIGS deposition process and a NaF and RbF post deposition treatment method.

Robust high-throughput laser scribing processes for monolithic interconnection of Cu(In, Ga)Se 2 absorber based thin-film solar cells were developed, validated and assessed for industrial roll-to-roll production of photovoltaic modules. Here we present results of the FP7-project APPOLO.

Improving the quantum coherence of solid-state systems that mimic two-level atoms, for instance spin qubits or single-photon emitters using semiconductor quantum dots, involves dealing with the noise inherent to the device. Charge noise results in a fluctuating electric field, spin noise in a fluctuating magnetic field at the location of the qubit, and both can lead to dephasing and decoherence of optical and spin states. We investigate noise in an ultrapure semiconductor device using a minimally invasive, ultrasensitive local probe: resonance fluorescence from a single quantum dot. We distinguish between charge noise and spin noise through a crucial difference in their optical signatures. Noise spectra for both electric and magnetic fields are derived from 0.1 Hz to 100 kHz. The charge noise dominates at low frequencies, spin noise at high frequencies. The noise falls rapidly with increasing frequency, allowing us to demonstrate transform-limited quantum-dot optical linewidths by operating the device above 50 kHz. Charge noise and spin noise lead to decoherence of the state of a quantum dot. A fast spectroscopic technique based on resonance fluorescence can distinguish between these two deleterious effects, enabling a better understanding of how to minimize their influence.

We study single InGaAs quantum-dots within a tunable microcavity and observe a large Rabi splitting and high cooperativity (5.5). The dynamics are limited by spectral wandering; we propose an improved design towards ultrahigh cooperativity.

We present a new approach to incorporate self-assembled quantum dots into a Fabry-P\'{e}rot-like microcavity. Thereby a 3$\lambda$/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor - mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggests that we are close to the strong coupling regime., Comment: 6 pages, 4 figures

We investigate the strong-coupling regime of a self-assembled quantum dot in a tunable microcavity with dark-field laser spectroscopy. The high quality of the spectra allows the line shapes to be analyzed revealing subtle quantum interferences. Agreement with a model calculation is achieved only by including exciton dephasing which reduces the cooperativity from a bare value of 9.0 to the time-averaged value 5.5. In the pursuit of high cooperativity, besides a high Q and low mode-volume cavity, we demonstrate that equal efforts need to be taken towards lifetime-limited emitter linewidths.

We report the realization of a spatial and spectrally tunable air-gap Fabry-Perot type microcavity of high finesse and cubic-wavelength-scale mode volume. These properties are attractive in the fields of opto-mechanics, quantum sensing and foremost cavity quantum electrodymanics. The major design feature is a miniaturized concave mirror with atomically smooth surface and radius of curvature as low as 10 micrometer produced by CO2 laser ablation of fused silica. We demonstrate excellent mode-matching of a focussed laser beam to the microcavity mode and confirm from the frequencies of the resonator modes that the effective optical radius matches the physical radius. With these small radii, we demonstrate sub-wavelength beam waists. We also show that the microcavity is sufficiently rigid for practical applications: in a cryostat at 4K, the root-mean-square microcavity length fluctuations are below 5 pm., Comment: The following article has been submitted to \emph{Applied Physics Letters}. After it is published, it will be found at http://scitation.aip.org/content/aip/journal/apl

Single quantum dots are solid-state emitters which mimic two-level atoms but with a highly enhanced spontaneous emission rate. A single quantum dot is the basis for a potentially excellent single photon source. One outstanding problem is that there is considerable noise in the emission frequency, making it very difficult to couple the quantum dot to another quantum system. We solve this problem here with a dynamic feedback technique that locks the quantum dot emission frequency to a reference. The incoherent scattering (resonance fluorescence) represents the single photon output whereas the coherent scattering (Rayleigh scattering) is used for the feedback control. The fluctuations in emission frequency are reduced to 20 MHz, just ~ 5% of the quantum dot optical linewidth, even over several hours. By eliminating the 1/f-like noise, the relative fluctuations in resonance fluorescence intensity are reduced to ~ 10E-5 at low frequency. Under these conditions, the antibunching dip in the resonance fluorescence is described extremely well by the two-level atom result. The technique represents a way of removing charge noise from a quantum device., Comment: 14 pages, 4 figures

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with $\ifmmode\pm\else\textpm\fi{}5\text{ }\text{ }\mathrm{nm}$ resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.