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We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrahigh quality of the single crystal studied. The resistivity measurements under high pressure reveal that the Tsc is suppressed linearly with pressure and reaches absolute zero around 20 GPa. Specific heat and muon spin relaxation measurements both indicate that the two-gap s-wave model best describes the superconductivity of V2Ga5. The spectra obtained from angle-resolved photoemission spectroscopy measurements suggest that two superconducting gaps open at the Fermi surface around the Z and {\Gamma} points. These results are verified by first-principles band structure calculations. We therefore conclude that V2Ga5 is a phonon-mediated two-gap s-wave superconductor, Comment: Some images experience distortion during the conversion process to EPS format

The Lifshitz-Kosevich (LK) theory is the pillar of magnetic quantum oscillations, which have been extensively applied to characterize a wide range of metallic states. In this study, we focus on the Shubnikov-de Haas (SdH) effect observed in SmSb, a rare-earth monopnictide. We observed a significant departure from the expected LK theory near $T_N=2.4$~K: both a peak-like anomaly and an enhancement in the temperature dependence of quantum oscillation amplitude are seen in SmSb. Moreover, we discovered a remarkable sensitivity of the SdH amplitudes to sample purity. By adjusting the sample purity, we were able to tune the temperature dependence of the $\alpha$ band's SdH amplitudes from a peak-like anomalous behavior to an enhancement. Therefore, SdH oscillations from the $\alpha$ band connect the two well-known non-LK behaviours, controllable through varying the sample purity, paving the way for developing further understanding of the mechanism leading to the anomalous quantum oscillations., Comment: 4 figures

Despite being a layered, easily-exfoliated compound, copper monotelluride (CuTe) features an unusual quasi-one-dimensional charge density wave below $T_{\rm CDW}\approx335$ K. Within a CuTe layer, the electrical resistivity depends sensitively on the direction of the electrical current. Here, we use magnetotransport to probe the metallic state of CuTe with two distinct in-plane current directions. When the current flows along the $a$-axis ($I//a$), the magnetoresistance exhibits a downward curvature as the magnetic field increases. On the other hand, when the current is along the $b$-axis ($I//b$), the magnetoresistance shows the opposite curvature. Our analysis uncovers a violation of Kohler scaling, but only for $I//a$. Shubnikov-de Haas oscillations are detected at low temperatures. Our results shed light on the nature of the metallic state in CuTe with the development of the charge density wave., Comment: 6 pages, 4 figures

The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here, we report our discovery of a nonsaturating, linear magnetoresistance in Mo$_8$Ga$_{41}$, a nearly isotropic strong electron-phonon coupling superconductor with a linear-in-temperature resistivity from the transition temperature to $\sim$55 K. The growth of the resistivity in field is comparable to that in temperature, provided that both quantities are measured in the energy unit. Our datasets are remarkably similar to magnetoresistance data of the optimally doped La$_{2-x}$Sr$_x$CuO$_4$, despite the clearly different crystal and electronic structures, and the apparent absence of quantum critical physics in Mo$_8$Ga$_{41}$. A new empirical scaling formula is developed, which is able to capture the key features of the low-temperature magnetoresistance data of Mo$_8$Ga$_{41}$, as well as the data of La$_{2-x}$Sr$_x$CuO$_4$., Comment: 7 pages, 3 figures

We report the single-crystal synthesis and detailed investigations of the cage-type superconductor Sc5Ru6Sn18, using powder x-ray diffraction (XRD), magnetization, specific-heat and muon-spin relaxation (muSR) measurements. Sc5Ru6Sn18 crystallizes in a tetragonal structure (space group I41/acd) with the lattice parameters a = 1.387(3) nm and c = 2.641(5) nm. Both DC and AC magnetization measurements prove the type-II superconductivity in Sc5Ru6Sn18 with Tc = 3.5(1) K, a lower critical field H_c1 (0) = 157(9) Oe and an upper critical field, H_c2 (0) = 26(1) kOe. The zero-field electronic specific-heat data are well fitted using a single-gap BCS model, with superconducting gap = 0.64(1) meV. The Sommerfeld constant varies linearly with the applied magnetic field, indicating s-wave superconductivity in Sc5Ru6Sn18. Specific-heat and transverse-field (TF) muSR measurements reveal that Sc5Ru6Sn18 is a superconductor with strong electron-phonon coupling, with TF-muSR also suggesting the single-gap s-wave character of the superconductivity. Furthermore, zero-field muSR measurements do not detect spontaneous magnetic fields below Tc, hence implying that time-reversal symmetry is preserved in Sc5Ru6Sn18., Comment: 23 pages, 11 figures

We report the magnetoresistance of ScSb, which is a semimetal with a simple rocksalt-type structure. We found that the magnetoresistance reaches $\sim$28000 % at 2 K and 14 T in our best sample, and it exhibits a resistivity plateau at low temperatures. The Shubnikov-de Haas oscillations extracted from the magnetoresistance data allow the full construction of the Fermi surface, including the so-called $\alpha_3$ pocket which has been missing in other closely related monoantimonides, and an additional hole pocket centered at $\Gamma$. The electron concentration ($n$) and the hole concentration ($p$) are extracted from our analysis, which indicate that ScSb is a nearly compensated semimetal with $n/p\approx0.93$. The calculated band structure indicates the absence of a band inversion, and the large magnetoresistance in ScSb can be attributed to the nearly perfect compensation of electrons and holes, despite the existence of the additional hole pocket., Comment: 6 pages, 4 figures

We perform optical spectroscopy measurement across the charge density wave (CDW) phase transitions on single-crystal samples of Sr$_{3}$Rh$_{4}$Sn$_{13}$ and (Sr$_{0.5}$Ca$_{0.5}$)$_{3}$Rh$_{4}$Sn$_{13}$. Formation of CDW energy gap was clearly observed for both single-crystal samples when they undergo the phase transitions. The existence of a Drude component in $\sigma_1(\omega)$ below \TCDW indicates that the Fermi surface is only partially gapped in the CDW state. The obtained value of 2$\Delta$/K$_{B}$T$_{CDW}$ is roughly 13 for both Sr$_{3}$Rh$_{4}$Sn$_{13}$ and (Sr$_{0.5}$Ca$_{0.5}$)$_{3}$Rh$_{4}$Sn$_{13}$ compounds. The value is considerably larger than the mean-field value based on the weak-coupling BCS theory. The observed spectral feature in (Sr$_{x}$Ca$_{1-x}$)$_{3}$Rh$_{4}$Sn$_{13}$ resembles those seen in many other CDW systems.

The evolution of the electronic structure and magnetic properties with Co substitution for Fe in the solid solution Fe$_{1-x}$Co$_x$Ga$_3$ was studied by means of electrical resistivity, magnetization, ab-initio band structure calculations, and nuclear spin-lattice relaxation $1/T_1$ of the $^{69,71}$Ga nuclei. Temperature dependencies of the electrical resistivity reveal that the evolution from the semiconducting to the metallic state in the Fe$_{1-x}$Co$_x$Ga$_3$ system occurs at $0.025

The formation of electric potential over lunar magnetized regions is essential for understanding fundamental lunar science, for understanding the lunar environment, and for planning human exploration on the Moon. A large positive electric potential was predicted and detected from single point measurements. Here, we demonstrate a remote imaging technique of electric potential mapping at the lunar surface, making use of a new concept involving hydrogen neutral atoms derived from solar wind. We apply the technique to a lunar magnetized region using an existing dataset of the neutral atom energy spectrometer SARA/CENA on Chandrayaan-1. Electrostatic potential larger than +135 V inside the Gerasimovic anomaly is confirmed. This structure is found spreading all over the magnetized region. The widely spread electric potential can influence the local plasma and dust environment near the magnetic anomaly., Comment: 19 pages, 3 figures

We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the temperature dependence of the spin relaxation time at low impurity density. This peak can survive even at 100 K, much higher than the prediction and measurement value in GaAs. There also exhibits a peak in the electron density dependence at low temperature. These two peaks originate from the nonmonotonic temperature and electron density dependence of the Coulomb scattering. The spin relaxation time can reach the order of nanosecond at low temperature and high impurity density., Comment: 6 pages, 4 figures

We investigate the electron spin relaxation of $n$-type InAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations with the relevant scattering explicitly included. We find that the quantum-wire size and the growth direction influence the spin relaxation time by modulating the spin-orbit coupling. Due to inter-subband scattering in connection with the spin-orbit interaction, spin-relaxation in quantum wires can show different characteristics from those in bulk or quantum wells and can be effectively manipulated by various means., Comment: 8 pages, 6 figures

We investigate the spin relaxation of $p$-type GaAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations. We find that the quantum-wire size influences the spin relaxation time effectively by modulating the energy spectrum and the heavy-hole--light-hole mixing of wire states. The effects of quantum-wire size, temperature, hole density, and initial polarization are investigated in detail. We show that, depending on the situation, the spin relaxation time can either increase or decrease with hole density. Due to the different subband structure and effects arising from spin-orbit coupling, many spin-relaxation properties are quite different from those of holes in the bulk or in quantum wells, and the inter-subband scattering makes a marked contribution to the spin relaxation., Comment: 10 pages, 7 figures, Phys. Rev. B 78, 2008, in press

We report the results of a $^{45}$Sc nuclear magnetic resonance (NMR) study on the quasi-one-dimensional compound Cu$_2$Sc$_2$Ge$_4$O$_{13}$ at temperatures between 4 and 300 K. This material has been a subject of current interest due to indications of spin gap behavior. The temperature-dependent NMR shift exhibits a character of low-dimensional magnetism with a negative broad maximum at $T_{max}$ $\simeq $ 170 K. Below $% T_{max}$, the NMR shifts and spin lattice relaxation rates clearly indicate activated responses, confirming the existence of a spin gap in Cu$_2$Sc$_2$Ge% $_4$O$_{13}$. The experimental NMR data can be well fitted to the spin dimer model, yielding a spin gap value of about 275 K which is close to the 25 meV peak found in the inelastic neutron scattering measurement. A detailed analysis further points out that the nearly isolated dimer picture is proper for the understanding of spin gap nature in Cu$_2$Sc$_2$Ge$_4$O$_{13}$., Comment: 4 pages, 6 figures, submitted to Phys. Rev. B

We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic kinetic spin Bloch equations, and we show that, analogous to the common sense in an isotropic system for conduction electrons, $T_1$, $T_2$ and $T_2^{\ast}$ are identical due to the short correlation time. The inhomogeneous broadening induced by the D'yakonov-Perel term is suppressed by the scattering, especially the Coulomb scattering, in this system., Comment: 4 pages, 2 figures, to be published in Phys. Lett. A

Hole spin dephasing time due to the D'yakonov-Perel' mechanism in $p$-type GaAs (100) quantum wells with well separated light-hole and heavy-hole bands is studied by constructing and numerically solving the kinetic spin Bloch equations. We include all the spin-conserving scattering such as the hole-phonon and the hole-nonmagnetic impurity as well as the hole-hole Coulomb scattering in our calculation. Different effects such as the temperature, the hole density, the impurity density and the Rashba coefficient on the spin dephasing are investigated in detail. We also show that the Coulomb scattering makes marked contribution to the spin dephasing. The spin dephasing time can either increase or decrease with temperature, hole/impurity density or the inclusion of the Coulomb scattering depending on the relative importance of the spin-orbit coupling and the scattering. It is also shown that due to the different spin-orbit coupling strengthes, many spin dephasing properties of holes are quite different from those of electrons., Comment: 13 pages, 7 figures, to be published in PRB 73, 2006

Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many features which are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated., Comment: 10 pages, 10 figures

The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field, the quantum dot size, the temperature as well as the electric field on the spin relaxation time are investigated in detail. Moreover, we show that the perturbation method widely used in the literature is inadequate in accounting for the electron structure and therefore the spin relaxation time., Comment: 8 pages, 9 figures in eps format

Magnetoelectric properties of the spin-valve-type tunnel junction of Ta(5\ nm)/Ni$_{79}$Fe$_{21}$ (25 nm)/Ir$_{22}$Mn$_{78}$ (10 nm)/Co$_{75}$Fe$_{25}$ (4 nm)/Al (0.8 nm)-oxide/Co$_{75}$Fe$_{25}$ (4 nm)/Ni$_{79}$Fe$_{21}$ (20 nm)/Ta (5 nm) are investigated both experimentally and theoretically. It is shown that both magnon and phonon excitations contribute to the tunneling process. Moreover, we show that there are two branches of magnon with spin $S=1/2$ and 3/2 respectively. The theoretical results are in good agreement with the experimental data., Comment: 4 pages, 6 figures in RevTex format

In order to assess the magnetic ordering process in Fe2VAl and the related material Fe2VGa, we have carried out nuclear magnetic resonance (NMR) and Mossbauer studies. 27Al NMR relaxation measurements covered the temperature range 4 -- 500 K in Fe(2+x)V(1-x)Al samples. We found a peak in the NMR spin-lattice relaxation rate, 27T1^-1, corresponding to the magnetic transitions in each of these samples. These peaks appear at 125 K, 17 K, and 165 K for x = 0.10, 0, and - 0.05 respectively, and we connect these features with critical slowing down of the localized antisite defects. Mossbauer measurements for Fe2VAl and Fe2VGa showed lines with no hyperfine splitting, and isomer shifts nearly identical to those of the corresponding sites in Fe3Al and Fe3Ga, respectively. We show that a model in which local band filling leads to magnetic regions in the samples, in addition to the localized antisite defects, can account for the observed magnetic ordering behavior., Comment: 5 pages, 3 figures