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This paper pushes the performance of cloth simulation, making the simulation interactive even for high-resolution garment models while keeping every triangle untangled. The penetration-free guarantee is inspired by the interior point method, which converts the inequality constraints to barrier potentials. We propose a major overhaul of this modality within the projective dynamics framework by leveraging an adaptive weighting mechanism inspired by barrier formulation. This approach does not depend on the distance between mesh primitives, but on the virtual life span of a collision event and thus keeps all the vertices within feasible region. Such a non-distance barrier model allows a new way to integrate collision resolution into the simulation pipeline. Another contributor to the performance boost comes from the subspace reuse strategy. This is based on the observation that low-frequency strain propagation is near orthogonal to the deformation induced by collisions or self-collisions, often of high frequency. Subspace reuse then takes care of low-frequency residuals, while high-frequency residuals can also be effectively smoothed by GPU-based iterative solvers. We show that our method outperforms existing fast cloth simulators by at least one order while producing high-quality animations of high-resolution models.

The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model., Comment: 7 pages

The strategy of band convergence of multi-valley conduction bands or multi-peak valence bands has been widely used to search or improve thermoelectric materials. However, the phonon-assisted intervalley scatterings due to multiple band degeneracy are usually neglected in the thermoelectric community. In this work, we investigate the (thermo)electric properties of non-polar monolayer $\beta$- and $\alpha$-antimonene considering full mode- and momentum-resolved electron-phonon interactions. We also analyze thoroughly the selection rules on electron-phonon matrix-elements using group-theory arguments. Our calculations reveal strong intervalley scattering between the nearly degenerate valley states in both $\beta$- and $\alpha$-antimonene, and the commonly-used deformation potential approximation neglecting the dominant intervalley scattering gives inaccurate estimations of the electron-phonon scattering and thermoelectric transport properties. By considering full electron-phonon interactions based on the rigid-band approximation, we find that, the maximum value of the thermoelectric figure of merits $zT$ at room temperature reduces to 0.37 in $\beta$-antimonene, by a factor of 5.7 comparing to the value predicted based on the constant relaxation-time approximation method. Our work not only provides an accurate prediction of the thermoelectric performances of antimonenes that reveals the key role of intervalley scatterings in determining the electronic part of zT, but also showcases a computational framework for thermoelectric materials., Comment: 7 figures