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A promising architecture for next-generation, low energy spintronic devices uses skyrmions -- nanoscale whirlpools of magnetic moment -- as information carriers. Notably, schemes for racetrack memory have been proposed in which skyrmions and antiskyrmions, their antiparticle, serve as the logical bits 1 and 0. However, major challenges exist to designing skyrmion-antiskyrmion based computing. The presence of both particles in one material is often mutually exclusive such that few systems have been identified in which they coexist, and in these systems their appearance is stochastic rather than deterministic. Here, we create a tunable skyrmion-antiskyrmion system in FeGe films through ion-irradiation and annealing, and detail the structural properties of the films under these various conditions. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions, showing evidence that the amorphized regions preferentially host antiskyrmions at densities controlled by the irradiation fluence. In this work, we focus on a subsequent, systematic electron diffraction study with in-situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from approximately 150$^{\circ}$ C to 250$^{\circ}$ C, enabling further tunability of skyrmion/antiskyrmion populations. We describe the crystallization kinetics using the Johnson-Mehl-Avrami-Kolmogorov model, finding that growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate. The procedures developed here can be applied towards creation of skyrmion-antiskyrmion systems for energy-efficient, high-density data storage, spin wave emission produced by skyrmion-antiskyrmion pair annihilation, and more generally testbeds for research on skyrmion-antiskyrmion liquids and crystals.

The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions have a strong influence on calculations of the effective $g$ factor of a lithographic quantum dot in a Ge/SiGe heterostructure. Comparing predictions from a model including these effects to raw magnetospectroscopy data, we apply maximum-likelihood estimation to infer the shape of a quantum dot with up to four holes. We expect that methods like this will be useful in assessing qubit-to-qubit variability critical to further scaling quantum computing technologies based on spins in semiconductors., Comment: 9 pages, 6 figures

Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals -- determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and anitskyrmions as storage bits and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.

Color centers in diamond are one of the most promising tools for quantum information science. Of particular interest is the use of single-crystal diamond membranes with nanoscale-thickness as hosts for color centers. Indeed, such structures guarantee a better integration with a variety of other quantum materials or devices, which can aid the development of diamond-based quantum technologies, from nanophotonics to quantum sensing. A common approach for membrane production is what is known as "smart-cut", a process where membranes are exfoliated from a diamond substrate after the creation of a thin sub-surface amorphous carbon layer by He$^+$ implantation. Due to the high ion fluence required, this process can be time-consuming. In this work, we demonstrated the production of thin diamond membranes by neon implantation of diamond substrates. With the target of obtaining membranes of $\sim$ 200 nm thickness and finding the critical damage threshold, we implanted different diamonds with 300 keV Ne$^+$ ions at different fluences. We characterized the structural properties of the implanted diamonds and the resulting membranes through SEM, Raman spectroscopy, and photoluminescence spectroscopy. We also found that a SRIM model based on a two-layer diamond/sp$^2$-carbon target better describes ion implantation, allowing us to estimate the diamond critical damage threshold for Ne$^+$ implantation. Compared to He$^+$ smart-cut, the use of a heavier ion like Ne$^+$ results in a ten-fold decrease in the ion fluence required to obtain diamond membranes and allows to obtain shallower smart-cuts, i.e. thinner membranes, at the same ion energy.

The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV $T_1$ relaxometry measurements.

The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of rapid thermal anneal temperature and implant density. We show that for our implant conditions the activation is best for anneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of 64% at the highest fluence. Below 400 $^\circ$C, remaining implant damage results in defects that act as superfluous carriers, and above 650 $^\circ$C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 64% as the implant fluence increased from $6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits., Comment: 7 pages, 4 figures

We describe the use of a coplanar waveguide whose slots are filled with resistive film, a resistively loaded coplanar waveguide (RLCPW), to measure two dimensional electron systems (2DES). The RLCPW applied to the sample hosting the 2DES provides a uniform metallic surface serving as a gate, to control the areal charge density of the 2DES. As a demonstration of this technique we present measurements on a Si MOSFET, and a model that successfully converts microwave transmission coefficients into conductivity of a nearby 2DES capacitively coupled to the RLCPW. We also describe the process of fabricating the highly resistive metal film required for fabrication of the RLCPW.

Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-B\"{u}ttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor., Comment: New measurements. Updated figures and discussion

Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of the out-of-plane $g$-factor for single-hole quantum dots in this material. As this is a single-hole measurement, this is the first experimental result that avoids the strong orbital effects present in the out-of-plane configuration. In addition to verifying the expected $g$-factor anisotropy between in-plane and out-of-plane magnetic ($B$)-fields, variations in the $g$-factor dependent on the occupation of the quantum dot are observed. These results are in good agreement with calculations of the $g$-factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, especially the first two holes, showing a strong spin-orbit coupling and suggesting dramatic $g$-factor tunability through both the $B$-field and the charge state.

An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progressing to smaller feature sizes has created pain points throughout the ecosystem. The present challenge includes shrinking the smallest features from nanometers to atoms (10 nm corresponds to 30 silicon atoms). Relaxing the requirement for achieving scalable manufacturing creates the opportunity to evaluate ideas not one or two generations into the future, but at the absolute physical limit of atoms themselves. This article describes recent advances in atomic precision advanced manufacturing (APAM) that open the possibility of exploring opportunities in digital electronics. Doing so will require advancing the complexity of APAM devices and integrating APAM with CMOS.

Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices., Comment: Version accepted for open access publication in Journal of Physics: Materials. Added keywords, additional text to the abstract, additional discussion of interfaces, and additional references. Consolidated references into one section at the end of the document instead of one part for the main article and one part for the supplementary material

A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. Here we present our work on using an array of randomly-magnetized micron-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4 $\mu$m thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic fields from each micromagnet in the array, after which we extract the magnetic polarity of each micromagnet using image analysis techniques. After evaluating the randomness of the micromagnet array PUF and the sensitivity of the NV readout, we conclude by discussing the possible future enhancements for improved security and magnetic readout., Comment: 8 pages main text (4 figures), 4 pages supplementary information (3 figures)

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit coupling strength, and absence of valley states. Here, we use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, $m$* ~ 0.08 $m$$_0$, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit-qubit interactions in an industry-compatible semiconductor platform., Comment: 20 pages, 5 figures including supporting information

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility two-dimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than $\sim6\times 10^{11}$cm$^{-2}$, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magneto-resistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward silicon-compatible spintronic devices.

We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.