336 results on '"Lu, Shulong"'
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2. Realize ultralow-energy-consumption photo-synaptic device based on a single (Al,Ga)N nanowire for neuromorphic computing
3. The dichotomous role of oxygen in the ohmic contact formation on p-type GaN grown by MBE and MOCVD
4. Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers
5. Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires
6. Engineer carrier transport at (Al,Ga)N nanowire/hydrogel interface to realize self-driven ultraviolet photodetectors with switchable response speed for imaging system
7. Accelerated aging of unencapsulated flexible GaInP/GaAs/InGaAs solar cells by means of damp heat and thermal cycling tests
8. Enhance the responsivity and response speed of self-powered ultraviolet photodetector by GaN/CsPbBr3 core-shell nanowire heterojunction and hydrogel
9. Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure
10. Quantitative amplitude-modulation scanning Kelvin probe microscopy via the second eigenmode excitation
11. Mechanism study of photoluminescence peak shift of transparent (In,Ga)N nanowire films detached by acid solution
12. Improvement of Self-Driven Nanowire-Based Ultraviolet Photodetectors by Metal–Organic Frameworks for Controlling Humanoid Robots.
13. Silicon-based microhole arrays for spectral tuning of white light emitted from InGaN nanocolumns grown by molecular-beam epitaxy
14. Flexible four-junction inverted metamorphic AlGaInP/AlGaAs/ In0.17Ga0.83As/In0.47Ga0.53As solar cell
15. Monolithic 24 cm2 flexible triple-junction solar cell encapsulated module based on the ipsilateral electrode welding technology：erratum
16. Effects of Plasmonic Au Nanoparticles on the Optical Nonlinearity of InAs/GaAs Quantum Dot Semiconductor Saturable Absorber Mirrors
17. Elimination of OISF in large-size Si substrate for low warpage and crack-free GaN epitaxial wafer
18. Electrical and Optical Properties of Beryllium Deep Acceptors in GaN
19. Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)
20. The investigation of wafer-bonded multi-junction solar cell grown by MBE
21. Strain study of epitaxial Al1−xGaxN based on first-principles theory
22. Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy
23. High efficiency thin film GaInP/GaAs/InGaAs inverted metamorphic (IMM) solar cells based on electroplating process
24. Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures
25. Optimized Ingaas Growth on Gap/Si(100) Templates with Different Low-Temperature Layers
26. Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy
27. Enhancing microstructure and device performance of InGaN quantum dot micro-LEDs through substrate off-cut angle modulation
28. Enhance the responsivity of self-driven ultraviolet photodetector by (Al,Ga)N nanowire/graphene/PVDF heterojunction with high stability
29. External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa
30. Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction
31. Realize ultralow-energy-consumption photo-synaptic device based on a single (Al,Ga)N nanowire for neuromorphic computing
32. Realization of Flexible Large-Sized GaInP/GaAs/InGaAs Solar Cells With Stable Low-Temperature Ohmic Contact Technique
33. Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness
34. Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance
35. Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE
36. Energy band alignment in operando inverted structure P3HT:PCBM organic solar cells
37. The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
38. Light-stimulated ultralow-power artificial synapse based on a single GaN nanowire for neuromorphic computing
39. Influence of interfacial recombination on hysteresis in the J-V curves of TiO2/MAPbI3/Spiro-OMeTAD solar cells
40. The fabrication of flexible and large‐size inverted metamorphic five‐junction solar cells
41. Investigation of aspherical microlens based on reflow technique
42. Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy
43. Quantitative measurement of the charge carrier concentration using dielectric force microscopy
44. The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film
45. Self-powered (In,Ga)N-nanowire-based photodetector with fast response speed for under-seawater detection
46. Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy
47. Supplementary document for Self-powered (In,Ga)N-nanowire-based photodetector with fast response speed for seawater detection - 6282939.pdf
48. Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection
49. The Optical Properties of Algan Grown by Mbe with Different Growth Temperature
50. SiO2 Passivated Graphene Saturable Absorber Mirrors for Ultrashort Pulse Generation
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