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47 results on '"Lu, Qijun"'

14. Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem.

Author

Yang, Lihong, Li, Zhumeng, Shan, Guangbao, Lu, Qijun, and Fu, Yu

Subjects
SILICON nanowires, MODEL validation, RADIO frequency, NUCLEAR industry, AEROSPACE industries, THROUGH-silicon via
Abstract

Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary. To investigate the TID effect on TSV structures, a 1D TSV capacitance model was established in COMSOL Multiphysics (COMSOL), and the impact of irradiation was simulated. Then, three types of TSV components were designed, and an irradiation experiment based on them was conducted, to validate the simulation results. After irradiation, the S21 degraded for 0.2 dB, 0.6 dB, and 0.8 dB, at the irradiation dose of 30 krad (Si), 90 krad (Si), 150 krad (Si), respectively. The variation trend was consistent with the simulation in the high-frequency structure simulator (HFSS), and the effect of irradiation on the TSV component was nonlinear. With the increase in the irradiation dose, the S21 of TSV components deteriorated, while the variation of S21 decreased. The simulation and irradiation experiment validated a relatively accurate method for assessing the RF systems' performance under an irradiation environment, and the TID effect on structures similar to TSVs in RF systems, such as through-silicon capacitors. [ABSTRACT FROM AUTHOR]

Published
2023
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28. Wideband compact power amplifier based on novel spatial power combining technique for millimeter‐wave applications.

Author

Lu, Qijun, Deng, Jianqin, Shan, Guangbao, and Zhu, Zhangming

Subjects
*POWER amplifiers, *POWER dividers, *COMPACTING, *WAVEGUIDES
Abstract

Based on spatial power combining technique using a novel waveguide‐to‐microstrip transition, this article proposes a wideband compact double‐layer two‐level power amplifier composed by six commercial power amplifier chips for millimeter‐wave applications. Double antipodal fin line transition and second‐order Wilkinson power divider/combiner are developed for the spatial power combining circuit. Furthermore, the proposed power amplifier is fabricated with over‐mode waveguides. When the input power is 10 dBm, the measured output power reaches up to 23 dBm, and reveals a very small output power variation about 1.4 dB over a bandwidth of 43% from 36 to 56 GHz. Therefore, the proposed power amplifier can be widely used in millimeter‐wave transceiver modules as well as THz sources, due to its excellent wideband performance. [ABSTRACT FROM AUTHOR]

Published
2021
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46. Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias.

Author

Lu, Qijun, Zhu, Zhangming, Yang, Yintang, and Ding, Ruixue

Subjects
*ELECTRIC waves, *ELECTRIC resistance, *INTEGRATED circuit design, *INSERTION loss measurement, *ELECTRIC capacity
Abstract

An equivalent-circuit model of shield differential through-silicon vias (SDTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using the 3-D full-wave field solver High Frequency Simulator Structure, showing that it is highly accurate up to 100 GHz. Furthermore, a full-wave extraction method for the resistance–inductance–capacitance–conductance (RLCG) parameters of SDTSVs is also proposed in this paper, which can be applied to all of differential transmission lines. It is shown that the results of the RLCG parameters obtained from the full-wave extraction method agree well with that from the analytical calculation up to 100 GHz, further validating the accuracy of the proposed model. Finally, using the proposed model, a deep analysis of electrical characteristics of SDTSVs is carried out to provide helpful design guidelines for them in future 3-D ICs. [ABSTRACT FROM AUTHOR]

Published
2015
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