124 results on '"Lu, Congyan"'
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2. Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals.
3. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application
4. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers
5. A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism
6. Contact Length Scaling in Dual-gate IGZO TFTs
7. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits
8. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT)
9. Progress in flexible organic thin-film transistors and integrated circuits
10. Investigation of positive bias temperature instability for monolayer polycrystalline MoS2 field-effect transistors
11. Collective Transport for Nonlinear Current-Voltage characteristics of Doped Conducting Polymers
12. 23.1: Controllable Growth of Conjugated Polymer Monolayer: from Field‐Effect Transistors to Integrated Circuits
13. Monolithically Stacked Two Layers of a-IGZO-Based Transistors Upon a-IGZO-Based Analog/Logic Circuits
14. High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer
15. Inter-Layer Dielectric Engineering for Monolithic Stacking 4F2-2 T0C DRAM with Channel-All-Around (CAA) IGZO FET to Achieve Good Reliability (>104 s Bias Stress, >1012 Cycles Endurance)
16. Flexible cation-based threshold selector for resistive switching memory integration
17. Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS 2 /WSe 2
18. High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric
19. Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application
20. Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec
21. First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors
22. 27‐3: Invited Paper: High‐Performance Sub‐50nm Channel Length 3D Monolithically Stackable Vertical IGZO TFTs for Active‐Matrix Application
23. A Direct n+-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
24. Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
25. Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic Stacking
26. Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2.
27. Low-cost 13.56MHz Rectifier Based on Organic Diode
28. Scaling MoS2 NCFET to 83 nm with Record-low Ratio of SSave/SSRef.=0.177 and Minimum 20 mV Hysteresis
29. Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation
30. 53‐5: Late‐News Paper: a‐IGZO TFT Based Active Matrix Pressure Sensor by Integrating ZnO Nanowires as Sensing Unit
31. A tied Fermi liquid to Luttinger liquid model for the explanation of nonlinear transport in conducting polymers
32. Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors
33. A Direct n + -Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors.
34. 27‐3: Invited Paper:High‐Performance Sub‐50nm Channel Length 3D Monolithically Stackable Vertical IGZO TFTs for Active‐Matrix Application
35. Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs
36. Towards High Resolution Active-Matrix GaN μ-LED Based Micro Displays
37. Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications
38. Optimization of Electrical Properties of MoS 2 Field‐Effect Transistors by Dipole Layer Coulombic Interaction With Trap States
39. Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy
40. Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics
41. Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors
42. Artificial Synapses: Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions (Adv. Electron. Mater. 12/2018)
43. Influences of Organic Passivation on performance of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
44. Charge Transfer within the F4 TCNQ-MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application
45. Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions
46. Bulk‐Like Electrical Properties Induced by Contact‐Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current
47. Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy
48. A Dual-Functional IGZO-Based Device With Schottky Diode Rectifying and Resistance Switching Behaviors.
49. A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors
50. Analysis of the contact resistance in amorphous InGaZnO thin film transistors
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