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This paper investigates the impact of dislocation density and active layer structure on the degradation mechanisms of 1.3 $\mu \text{m}$ InAs Quantum Dot (QD) lasers for silicon photonics. We analyzed the optical behavior of two sets of samples, having different dislocation densities and different number of quantum dot layers in the active region. The samples were subjected to a short-term step-stress experiment and to long-term constant current operation in order to investigate the dominant degradation processes. The results indicate that: (i) the temperature stability is much higher in the devices grown on native substrate, thanks to the lower defect density; (ii) the roll-off current is considerably higher for the devices with higher number of layers, due to the lower density of carriers in the QDs; (iii) in nominal ground-state operating regime, the degradation rate is limited by the density of dislocations, that may serve as preferential paths for the diffusion of non-radiative recombination centers; (iv) at extreme injection levels and operating temperatures, the devices exhibit a blue shift of the spectral emission; possible explanations for this process are discussed in the paper.

This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold current, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesis was also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process.

This paper reports on the impact of the quality of the epitaxial structure of InAs Quantum Dot (QD) lasers grown on silicon substrates on lifetime. To this aim, a series of current step-stress and constant-current aging experiments were carried out on two sets of Fabry-Perot QD lasers, emitting at 1.3 μm and featuring two different Threading Dislocations Densities (TDDs) within the epilayers, nominally 6E7 cm-2 (high TDD) grown on Si substrates and 500 cm-2 (low TDD) grown on lattice matched GaAs substrates. The results of the step-stress procedure indicate that i) the high-current optical performance of the lasers is limited by TDD, which reduces the bias range for useful Ground State (GS)-only operation and lowers the roll-off point of the optical output characteristic; ii) TDD contributes to the acceleration of the dominant optical degradation mechanism at high stress current levels, represented for this family of devices by the recombinationenhanced generation of defects in device regions close to the active layers; iii) dislocation density also accelerates optical degradation in GS regime. This process is primarily driven by the diffusion of Non-Radiative Recombination Centers (NRRCs) toward the active region of the devices, as demonstrated by the dependence of threshold current variation on the square root of time. These experimental results show that the presence of TDDs is the main limiting factor for the reliability of QD lasers for epitaxially-integrated silicon photonics applications, further confirming the outcome of previous statistical lifetime analyses carried out on devices featuring similar epitaxial structures.