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Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe$_2$/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe$_2$ monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures.

Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nano-scaled, cost-effective, and environmentally sustainable sensor solutions. These sensors encode readouts in resistance state changes based on gas concentration, yet their nonlinear current-voltage characteristics offer richer dynamics, capturing detailed information about REDOX reactions and surface kinetics. Traditional vertical devices fail to fully exploit this complexity. This study demonstrates planar resistive switching devices, moving beyond the Butler-Volmer model. A systematic investigation of the electrochemical processes in Na-doped ZnO with lateral planar contacts reveals intricate patterns resulting from REDOX reactions on the device surface. When combined with advanced algorithms for pattern recognition, allow the analysis of complex switching patterns, including crossings, loop directions, and resistance values, providing unprecedented insights for next-generation complex sensors.

The advent of memristors and resistive switching has transformed solid state physics, enabling advanced applications such as neuromorphic computing. Inspired by these developments, we introduce the concept of Mem-emitters, devices that manipulate light emission properties of semiconductors to achieve memory functionalities. Mem-emitters, influenced by past exposure to stimuli, offer a new approach to optoelectronic computing with potential for enhanced speed, efficiency, and integration. This study explores the unique properties of transition metal dichalcogenides-based heterostructures as a promising platform for Mem-emitter functionalities due to their atomic-scale thickness, tunable electronic properties, and strong light-matter interaction. By distinguishing between population-driven and transition rate-driven Mem-emitters, we highlight their potential for various applications, including optoelectronic switches, variable light sources, and advanced communication systems. Understanding these mechanisms paves the way for innovative technologies in memory and computation, offering insights into the intrinsic dynamics of complex systems., Comment: 3 figures

Despite the remarkable progress in emerging solar cell technologies such as hybrid organic-inorganic perovskites, there are still significant limitations related to the stability of the devices and their non-ideal electrical behavior under certain external stimuli. We present a conceptual framework for characterizing photovoltaic devices by integrating cyclic voltammetry (CV) and impedance spectroscopy (IS). This framework is constructed from a microscopic, multi-mode perspective that explicitly accounts for drift, diffusion, displacement, and memory contributions. We derive comprehensive analytical expressions for current-voltage relationships and complex admittance. Our model reveals the inseparable connection between hysteresis behaviors in current-voltage characteristics observed in CV and the apparent capacitive and inductive behaviors seen in IS spectral analysis. We demonstrate how CV and IS naturally complement each other, providing a deeper microscopic understanding of device performance and limitations. Additionally, we establish the relationship between intrinsic material parameters and experimentally accessible extrinsic parameters such as light intensity, temperature, DC bias, voltage amplitude, and frequency. This framework enables unprecedented optimization of solar cell performance, marking a significant advancement towards sustainability., Comment: 6 figures

Impedance spectroscopy is vital for material characterization and assessing electrochemical device performance. It provides real-time analysis of dynamic processes such as electrode kinetics, electrons, holes or ion transport, and interfacial or defect driven phenomena. However, the technique is sensitive to experimental conditions, introducing potential variability in results. The intricate interplay of transient effects within the realm of spectral impedance analyses introduces a layer of complexity that may impede straightforward interpretations. This demands a nuanced approach for refining analytical methodologies and ensuring the fidelity of impedance characterization once the dynamic contributions of transient ingredients cannot be disentangled from the underlying steady-state characteristics. While inherent systematic errors impose a practical limit (accuracy floor) on achievable measurement accuracy, this paper offers qualitative and quantitative insights into how specific procedures affect this limit. Only by effectively addressing these errors can we push beyond this constraint., Comment: 5 figures

Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics but also for significant qualitative contrasts of time-resolved optical responses during the operation of resonant tunneling devices. Therefore, similar device architectures and different compositions have been compared to elucidate the correlation among structural parameters, radiative recombination processes, and electron-hole pair and minority carrier relaxation mechanisms. When these ingredients intermix with the electronic structure in Sb-based tunneling devices, it is proven possible to assess various time scales according to the intensity of the current flux, contrary to what has been observed in As-based tunneling devices with similar design and transport characteristics. These time scales are strongly affected not only by the filling process in the $\Gamma$ and L states in Sb-based double-barrier quantum wells but also by the small separation between these states, compared to similar heterostructures based on As., Comment: 11 pages, 6 figures, submitted to the Physical Review Applied journal

Basic multimode impedance analysis grounded in the availability of nonequilibrium charge carriers and their retarded path towards equilibrium is used to access the inadequacy of equivalent circuits in nonlinear systems with inherent memory. On the basic grounds of generation and recombination (or trapping) of nonequilibrium carriers and their relaxation times, we show how seeming complexity of frequency-dependent impedance that matches a vast universe of experimental evidences can be reduced to simple combinations of basic microscopic ingredients. Counterintuitive features such as a negative capacitances or unexpected inductances become a metaphoric construction with poor physical meaning, pointing to the limitations and ambiguities of the symbolic nature of "equivalent" circuits. Our approach further provides a microscopic perspective that exposes the linkage of an apparent flux with an apparent inductance dismissing any magnetic essence., Comment: 9 pages, 7 figures

We investigate the energy relaxation segmentation in a resonant tunneling heterostructures by assessing the optical and transport dynamics of non-equilibrium charge carriers. The electrical and optical properties are analyzed using electronic transport measurements combined with electro- and photoluminescence spectroscopies in continuous-wave mode. The radiative recombination is mainly governed by the creation of heavy holes \textit{via} impact ionization processes. Our results suggest hot electrons and holes populations form independent non-equilibrium systems that do not thermalize among them and with the lattice. Consequently, the carriers effective temperature changes independently at different regions of the heterostructure, with a population distribution for holes colder than for electrons., Comment: This version of the manuscript was submitted to the Journal of the Physical Chemistry C. The revised published version can be found at https://pubs.acs.org/doi/10.1021/acs.jpcc.1c02173

The inertia of trapping and detrapping of nonequilibrium charge carriers affects the electrochemical and transport properties of both bulk and nanoscopic structures in a very peculiar way. An emerging memory response with a hysteresis in the current-voltage response and its eventual multiple crossing, produced by this universally available ingredient, are signatures of this process. Here, we deliver a microscopic and analytical solution for these behaviors, understood as the modulation of the topology of the current-voltage loops. The memory emergence becomes thus a characterization tool for intrinsic features that affect the electronic transport of solids such as the nature and number of trapping sites, intrinsic symmetry constraints, and natural relaxation time scales. This method is also able to reduce the seeming complexity of frequency-dependent electrochemical impedance and cyclic voltammetry observable for a variety of systems to a combination of simple microscopic ingredients., Comment: 9 pages, 7 figures. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 133, 134901 (2023) and may be found at https://aip.scitation.org/doi/full/10.1063/5.0142721

This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms. Statistical fluctuations of the band-gap however become also relevant in this regime and we were able to deconvolute them from the decoherence contributions. The circularly polarized magneto-photoluminescence unveils a non-monotonic tuning of the coherence for one of the spin components at low magnetic fields. This effect has been ascribed to the competition between short-range interactions and spin-flip scattering, modulated by the momentum relaxation time.

We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splitting is observed in the electroluminescence emission from the emitter prewell, enabling the determination of the charge carrier build-up. Our findings show that magneto-electroluminescence spectroscopy techniques provide useful insights on the charge carrier dynamics in resonant tunneling diodes and is a versatile tool to complement magneto-transport techniques. This approach will drive the way for developing potentially more efficient opto-electronic resonant tunneling devices, by e.g., monitoring voltage dependent charge accumulation for improving built-in fields and hence to maximize photodetector efficiency and/or minimize optical losses., Comment: 9 pages, 7 figures

The characterization of helical states can be performed by checking the existence of the re-entrant behaviour, which appears as a dip in the conductance probed in nanowires (NWs) with strong spin-orbit coupling (SOC) and under perpendicular magnetic field. On the other hand, the experiment described in Ref. 1 observed the re-entrant behaviour in the absence of a magnetic field, which was explained through spin-flipping two-particle backscattering. We theoretically show that the observation of the re-entrant behaviour is due to a multi-channel scattering mechanism, which causes a reduction of the transmission when an effective attractive potential and coupling between different channels are present. Both ingredients are provided by the SOC in the transport properties of NWs., Comment: 5 pages, 4 figures

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from high to low and the EL on-off ratio is enhanced by 2 orders of magnitude compared to the current on-off ratio. By combining the EL and current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current-voltage and the EL, we are able to tune the EL on-off ratio by up to 6 orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current on and off states. This electroluminescence, combined with the unique RTD properties such as the negative differential resistance (NDR) and high frequency operation, enables the development of high speed functional opto-electronic devices and optical switches., Comment: 6 pages, 6 figures

Electronic transport through a material depends on the response to local perturbations induced by defects or impurities in the material. The scattering processes can be described in terms of phase shifts and corresponding cross sections. The multiorbital nature of the spinor states in transition metal dichalcogenides would naturally suggest the consideration of a massive Dirac equation to describe the problem, while the parabolic dispersion of its conduction and valence bands would invite a simpler Schr\"odinger equation description. Here, we contrast the scattering of massive Dirac particles and Schr\"odinger electrons, in order to assess different asymptotic regimes (low and high Fermi energy) for each one of the electronic models and describe their regime of validity or transition. At low energies, where the dispersion is approximately parabolic, the scattering processes are dominated by low angular momentum channels, which results in nearly isotropic scattering amplitudes. On the other hand, the differential cross section at high Fermi energies exhibits clear signatures of the linear band dispersion, as the partial phase shifts approach a non-zero value. We analyze the electronic dynamics by presenting differential cross sections for both attractive and repulsive scattering centers. The dissimilar behavior between Dirac and Schr\"odinger carriers points to the limits and conditions over which different descriptions are required for the reliable treatment of scattering processes in these materials.

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot\mathbf{p}$ and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm., Comment: Final Version

The optimal quantum control theory is employed to determine electric pulses capable of producing quantum gates with high fidelity (higher than 0.9997). Particularly, these quantum gates were chosen to perform the permutation algorithm (Z. Gedik et al., Scientific reports 5, 14671, (2015).) in hybrid qubits in a double quantum dot (DQD) platform. The permutation algorithm is an oracle based quantum algorithm that solves the problem of the permutation parity faster than a classical algorithm without the necessity of entanglement between particles. The only requirement for achieving the speedup is the use of a one-particle quantum system with at least three levels. The high fidelity found in our results is closely related to quantum speed limit, which is a measure of how fast a quantum state can be manipulated. Furthermore, our scheme can be used for the practical realization of different quantum algorithms in DQDs., Comment: 5 pages, 5 figures, comments welcome

We study the role of different orientations of an applied magnetic field as well as the interplay of structural asymmetries on the characteristics of eigenstates in a quantum ring system. We use a nearly analytical model description of the quantum ring, which allows for a thorough study of elliptical deformations and their influence on the spin content and Berry phase of different quantum states. The diamagnetic shift and Zeeman interaction compete with the Rashba spin-orbit interaction, induced by confinement asymmetries and external electric fields, to change spin textures of the different states. Smooth variations in the Berry phase are observed for symmetric quantum rings as function of applied magnetic fields. Interestingly, we find that asymmetries induce nontrivial Berry phases, suggesting that defects in realistic structures would facilitate the observation of geometric phases.

The variety of nanowire crystal structures gave rise to unique and novel transport phenomena. In particular, we have explored the superlattice profile generated by strain field modulation in twinplane nanowires for the tuning of transport channels and the built-in spin-orbit potential profile of polytypic nanowires, in order to realize a spin filter. The Multicomponent Scattering Approach has been used in terms of the Transfer Matrix Method to describe the phase-time of charge carriers. This system showed advantages for attaining conditions for the propagation of wave packets with negative group velocity. Moreover, the spin transport effect of a potential profile with volumetric spin-orbit bulk inversion asymmetry, as present on polytypic nanowires, was described through the Reverse Runge-Kutta Method. Using the peculiar symmetry of the excited states we have characterized a dominant spin dependence on structural parameters that results in effective spin filtering., Comment: 17 pages, 7 figures

The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experimentally the memcomputing version of the mechanical Pascaline, capable of processing and storing the numerical results in the multiple levels of each memristive element. Our result is the first experimental demonstration of multidigit arithmetics with multi-level memory devices that further emphasizes the versatility and potential of memristive systems for future massively-parallel high-density computing architectures.

We present a theoretical description of Bogolyubov-type excitations of exciton-polariton Bose-Einstein condensates (BECs) in semiconductor microcavities. For a typical two dimensional (2D) BEC we focus on two limiting cases, the weak- and strong-coupling regimes, where a perturbation theory and the Thomas-Fermi approximation, respectively, are valid. We calculate integrated scattering intensity spectra for probing the collective excitations of the condensate in both considered limits. Moreover, in relation to recent experiments on optical modulation allowing localization of condensates in a trap with well controlled shape and dimensions, we study the quasi-one dimensional (1D) motion of the BEC in microwires and report the corresponding Bogolyubov's excitation spectrum. We show that in 1D case the characteristic polariton-polariton interaction constant is expressed as $g_{1}=3\lambda \mathcal{N}/(2L_{y})$ ($\lambda $ is the 2D polariton-polaritons interaction parameter in the cavity, $\mathcal{N}$ the number of the particles, and $L_{y}$ the wirecavity width). We reveal some interesting features for 2D and 1D Bogolyubov spectra for both repulsive $(\lambda >0)$ and attractive $(\lambda <0)$ interaction., Comment: 12 pages, 6 figures

The spin transport characteristics of a nanowire directional electronic coupler have been evaluated theoretically via a transfer matrix approach. The application of a gate field in the region of mixing allows for control of spin current through the different leads of the coupler via the Rashba spin-orbit interaction. The combination of spin-orbit interaction and applied gate voltages on different legs of the coupler give rise to a controllable modulation of the spin polarization. Both structural factors and field strength tuning lead to a rich phenomenology that could be exploited in spintronic devices., Comment: 9 pages, 4 figures