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41 results on '"Longhi, Patrick E."'

1. Key-Components for Ultra-low DC Power Gallium Nitride Low-Noise Receivers

Author

Longhi, Patrick E., Ciccognani, Walter, Colangeli, Sergio, Limiti, Ernesto, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Tan, Kay Chen, Series Editor, Ciofi, Carmine, editor, and Limiti, Ernesto, editor

Published
2024
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3. On the Simultaneous Conjugate Match of N-Port Networks

Author

Colangeli, Sergio, Serino, Antonio, Ciccognani, Walter, Longhi, Patrick E., and Limiti, Ernesto

Abstract

Some advancements are proposed to the theory of simultaneous conjugate match (SCM) of $N$ -ports. It is shown that, if a network qualifies for geometrical unconditional stability (g-US), then it can be matched simultaneously at all ports. The proof serves as the basis for constructing an iterative algorithm (AlgG) which is guaranteed to converge to the SCM condition for all $N$ -ports exhibiting g-US. In addition to the main results above mentioned, two more iterative algorithms are presented (AlgS and AlsA), which are conjectured to work for all networks satisfying g-US. AlgS can be shown to converge globally for $N = 2$ and AlgA to converge locally for all $N$ . Besides their theoretical interest, these results find a natural application in the matching of passive networks, and in particular of $N$ -element phased arrays. However, they can be applied to any (i.e., also active) $N$ -port as long as this is known to exhibit g-US.

Published
2024
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9. 32–36-GHz Single-Chip Front-End MMIC Featuring 35-dBm Output Power and 3.2-dB Noise Figure With 60- and 100-nm GaN/Si HEMTs

Author

Longhi, Patrick E., Pace, Lorenzo, Costanzo, Ferdinando, Ciccognani, Walter, Colangeli, Sergio, Giofre, Rocco, Leblanc, Remy, Suriani, Andrea, Vitobello, Fabio, and Limiti, Ernesto

Abstract

The design, realization, and test of a $Ka$ -band gallium nitride (GaN) monolithic microwave-integrated circuit (MMIC) single-chip front-end (SCFE) is presented. The MMIC, realized in OMMIC’s 100- and 60-nm gate length GaN on Silicon process, integrates high-power and low-noise amplification together with transmit or receive selection switches in a $4.7\times3.0$ mm chip area. The SCFE is conceived for active electronically scanned antenna applications operating from 32 to 36 GHz. In RX mode, a typical noise figure of 3.2 dB and gain better than 3B have been measured. In TX mode, the typical output power and the power-added efficiency (PAE) are 35 dBm and 16%, respectively. A drain bias point trade-off analysis is performed so the power amplifier’s transistors channel temperature remains below 160° while design charts are provided for the synthesis of the low-noise amplifier (LNA) block. Finally, 100- and 60-nm gate length transistors are combined on the MMIC to improve its performance in terms of receive noise figure and transmit gain and output power. To the best of the authors’ knowledge, this GaN SCFE features the highest operating frequency reported in the open literature regarding integrated GaN/Si solutions and compares well with GaN/SiC MMICs especially considering the CW test condition here reported while concurrently fulfilling the FET’s channel temperature requirement.

Published
2024
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18. Non-Destructive, Self-Contained Extraction Method of Parasitic Resistance in HEMT Devices

Author

Colangeli, Sergio, Ciccognani, Walter, Serino, Antonio, Longhi, Patrick E., Pace, Lorenzo, Poulain, Julien, Leblanc, Rémy, and Limiti, Ernesto

Subjects
Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, Hardware_LOGICDESIGN
Abstract

The paper studies the classical problem of determining the extrinsic resistances (RG, RS and RD) of field-effect transistors (FETs), and in particular of high-electron mobility transistors (HEMTs). In articular, this study relies on small-signal measurements of open-channel transistors.

Published
2020
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24. GaN/Si Ka-band SPDT for observation payloads

Author

Polli, Giorgio, primary, Longhi, Patrick E., additional, Colangeli, Sergio, additional, Fenu, Silvio, additional, Costanzo, Ferdinando, additional, Ciccognani, Walter, additional, and Limiti, Ernesto, additional

Published
2019
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30. Feasibility Study and Design of a Robust Low-Noise Amplifier Operating at Millimeter-Wave for High Reliability Applications.

Author

Pace, Lorenzo, Longhi, Patrick E., and Limiti, Ernesto

Subjects
LOW noise amplifiers, FEASIBILITY studies, MILLIMETER waves, RELIABILITY in engineering, GALLIUM nitride
Abstract

A feasibility study and the corresponding design flow for robust millimeter wave GaN LNAs is provided in this paper. Particular attention is devoted to the selection of the optimum geometry of the first stage active device. A trade-off is shown between noise performance and robustness requirements. The beneficial effects of source degenerative feedback are shown. The LNA's simulated performance are gain > 20B, NF < 1.7dB and power handling capability verified up to +20 dBm input power in CW operation. This design is well suited for operation in high reliability systems, such as space operation on airborne applications. [ABSTRACT FROM AUTHOR]

Published
2020

31. Improved microwave attenuator topology minimizing the number of control voltages.

Author

Longhi, Patrick E., Colangeli, Sergio, Ciccognani, Walter, and Limiti, Ernesto

Subjects
*MICROWAVE attenuation, *TOPOLOGY, *NUMBER theory, *ELECTRIC potential, *SIGNAL processing
Abstract

This letter presents an improved circuit topology to minimize the number of external control voltages that are required to set the state of an N‐bit microwave digital attenuator. An alternative method to connect the control signal is proposed. Typically, the control signal is connected to the gate terminal of the field effect transistor while the source terminal is DC grounded. Here, the control signal is applied to the source terminal of the field effect transistor while the gate is connected to a fixed reference voltage. In this way, only one control voltage is necessary to set the state of single attenuator cell vs two control voltages required in the typical case. The proposed method becomes particularly beneficial as the number of bits increases (ie, >4). The topology has been validated through design, realization, and testing of a 5‐bit Monolithic Microwave Integrated Circuit (MMIC) attenuator operating over the full C‐band (4‐8 GHz). [ABSTRACT FROM AUTHOR]

Published
2019
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32. Q/V band LNA for satellite on‐board space applications using a 70 nanometers GaAs mHEMT commercial technology.

Author

Ciccognani, Walter, Longhi, Patrick E., Colangeli, Sergio, Limiti, Ernesto, and Senior Member IEEE

Subjects
*TELECOMMUNICATION satellites, *LOW noise amplifiers, *IMPEDANCE matching, *MILLIMETER waves, *MODULATION-doped field-effect transistors
Abstract

Abstract: Designing wideband low noise amplifiers (LNAs) at millimeter wave frequencies (>30 GHz) is rather challenging due to trade‐offs that need to be achieved between often contrasting goals such as noise figure, gain, impedance matching, stability, DC power consumption, and chip size. In this paper, a low noise design procedure at 50 GHz is presented, proving the feasibility of a 2 dB Noise Figure LNA at Q/V band. Such performance is enabling for future (but imminent) satellite communication systems operating in the 47‐52 GHz frequency band. Repeatability and reliability are key requirements for satellite operations and therefore an Industrial Grade—Space Qualified technology has been selected. [ABSTRACT FROM AUTHOR]

Published
2018
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