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35 results on '"Loir, Anne-Sophie"'

7. Elaboration de nouvelles microcellules BDD micro-usinées pour la détermination des métaux lourds

Author

Sbartai, Amel, primary, Namour, Philipe, additional, Errachid, Abdelhamid, additional, Krejči, Jan, additional, Renaud, L., additional, Hamlaoui, Mohamed Larbi, additional, Loir, Anne-Sophie, additional, Garrelie, F., additional, Donnet, C., additional, Soder, H., additional, Audouard, E., additional, Granier, J., additional, and Jaffrezic-Renault, Nicole, additional

Published
2020
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11. Towards Room Temperature Phase Transition of W-Doped VO 2 Thin Films Deposited by Pulsed Laser Deposition: Thermochromic, Surface, and Structural Analysis.

Author

Bleu, Yannick, Bourquard, Florent, Barnier, Vincent, Loir, Anne-Sophie, Garrelie, Florence, and Donnet, Christophe

Subjects
PHASE transitions, PULSED laser deposition, ELECTROCHROMIC effect, THIN films, THERMOCHROMISM, TRANSITION temperature, RAPID thermal processing, SURFACE chemistry
Abstract

Vanadium dioxide (VO2) with an insulator-to-metal (IMT) transition (∼68 °C) is considered a very attractive thermochromic material for smart window applications. Indeed, tailoring and understanding the thermochromic and surface properties at lower temperatures can enable room-temperature applications. The effect of W doping on the thermochromic, surface, and nanostructure properties of VO2 thin film was investigated in the present proof. W-doped VO2 thin films with different W contents were deposited by pulsed laser deposition (PLD) using V/W (+O2) and V2O5/W multilayers. Rapid thermal annealing at 400–450 °C under oxygen flow was performed to crystallize the as-deposited films. The thermochromic, surface chemistry, structural, and morphological properties of the thin films obtained were investigated. The results showed that the V5+ was more surface sensitive and W distribution was homogeneous in all samples. Moreover, the V2O5 acted as a W diffusion barrier during the annealing stage, whereas the V+O2 environment favored W surface diffusion. The phase transition temperature gradually decreased with increasing W content with a high efficiency of −26 °C per at. % W. For the highest doping concentration of 1.7 at. %, VO2 showed room-temperature transition (26 °C) with high luminous transmittance (62%), indicating great potential for optical applications. [ABSTRACT FROM AUTHOR]

Published
2023
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14. Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal Annealing

Author

Consejo Superior de Investigaciones Científicas (España), Université de Lyon, Agence Nationale de la Recherche (France), Bourquard, Florent, Bleu, Yannick, Loir, Anne-Sophie, Caja-Munoz, Borja, Ávila, José, Asensio, María C., Raimondi, Gaëtan, Shokouhi, Maryam, Rassas, Ilhem, Farre, Carole, Chaix, Carole, Barnier, Vincent, Jaffrezic-Renault, Nicole, Garrelie, Florence, Donnet, Christophe, Consejo Superior de Investigaciones Científicas (España), Université de Lyon, Agence Nationale de la Recherche (France), Bourquard, Florent, Bleu, Yannick, Loir, Anne-Sophie, Caja-Munoz, Borja, Ávila, José, Asensio, María C., Raimondi, Gaëtan, Shokouhi, Maryam, Rassas, Ilhem, Farre, Carole, Chaix, Carole, Barnier, Vincent, Jaffrezic-Renault, Nicole, Garrelie, Florence, and Donnet, Christophe

Abstract

Graphene-based materials are widely studied to enable significant improvements in electroanalytical devices requiring new generations of robust, sensitive and low-cost electrodes. In this paper, we present a direct one-step route to synthetize a functional nitrogen-doped graphene film onto a Ni-covered silicon electrode substrate heated at high temperature, by pulsed laser deposition of carbon in the presence of a surrounding nitrogen atmosphere, with no post-deposition transfer of the film. With the ferrocene methanol system, the functionalized electrode exhibits excellent reversibility, close to the theoretical value of 59 mV, and very high sensitivity to hydrogen peroxide oxidation. Our electroanalytical results were correlated with the composition and nanoarchitecture of the N-doped graphene film containing 1.75 at % of nitrogen and identified as a few-layer defected and textured graphene film containing a balanced mixture of graphitic-N and pyrrolic-N chemical functions. The absence of nitrogen dopant in the graphene film considerably degraded some electroanalytical performances. Heat treatment extended beyond the high temperature graphene synthesis did not significantly improve any of the performances. This work contributes to a better understanding of the electrochemical mechanisms of doped graphene-based electrodes obtained by a direct and controlled synthesis process.

Published
2019

15. Electrochemical properties of nitrogen-doped graphene for environmental sensors

Author

Bourquard, Florent, Bleu, Yannick, Barnier, Vincent, Loir, Anne-Sophie, Chaix, Carole, Raimondi, Gaëtan, Lagarde, Florence, Jaffrezic-Renault, Nicole, Garrelie, Florence, Donnet, Christophe, Laboratoire Hubert Curien [Saint Etienne] (LHC), Université Jean Monnet [Saint-Étienne] (UJM)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Laboratoire Georges Friedel (LGF-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Interfaces & biosensors - Interfaces & biocapteurs, Institut des Sciences Analytiques (ISA), Institut de Chimie du CNRS (INC)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and PEPS Université de Lyon - CNRS

Subjects
[PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract

International audience; A promising way to tailor the chemical and electronic properties of graphene layers is the doping of the carbon honeycomb using heteroatoms such as nitrogen or boron. In the domain of electrochemical sensor, this may allow to control both conductivity and chemical activity. Nitrogen doped graphene was produced by the thermal annealing of nitrogen doped amorphous carbon (a-C:N) deposited either on a nickel thin film on a silicon substrate or between the silicon substrate and the nickel catalyst layer. The a-C:N thin films were produced by femtosecond pulsed laser ablation of graphite in nitrogen, while the nickel thin film was thermally evaporated. The nitrogen content and bonding configuration in the produced films were evaluated by XPS spectroscopy, with a particular attention to the ratio of pyridinic and pyrrolic bondings, the former being more interesting to control the conductivity and chemical activity of the film. The structure of the graphene was studied through microRaman spectroscopy using Raman mapping. Those results were compared to the electrochemical properties of the produced N-doped graphene films, studied through cyclic voltammetry using ferrocene as a redox probe. Electron transfer properties are compared to non-doped graphene films, which have already shown promising electrografting perspectives for advanced compound detection (1).(1) P. Fortgang et al., ACS Applied Materials and Interfaces 8 (2016) 1424-1433

Published
2018

17. Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal Annealing

Author

Bourquard, Florent, primary, Bleu, Yannick, additional, Loir, Anne-Sophie, additional, Caja-Munoz, Borja, additional, Avila, José, additional, Asensio, Maria-Carmen, additional, Raimondi, Gaëtan, additional, Shokouhi, Maryam, additional, Rassas, Ilhem, additional, Farre, Carole, additional, Chaix, Carole, additional, Barnier, Vincent, additional, Jaffrezic-Renault, Nicole, additional, Garrelie, Florence, additional, and Donnet, Christophe, additional

Published
2019
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20. Robust Electrografting on Self-Organized 3D Graphene Electrodes

Author

Fortgang, Philippe, primary, Tite, Teddy, additional, Barnier, Vincent, additional, Zehani, Nedjla, additional, Maddi, Chiranjeevi, additional, Lagarde, Florence, additional, Loir, Anne-Sophie, additional, Jaffrezic-Renault, Nicole, additional, Donnet, Christophe, additional, Garrelie, Florence, additional, and Chaix, Carole, additional

Published
2016
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23. Temporal pulse shaping effects on aluminium and boron ablation plumes generated by ultrashort pulsed laser ablation and analyzed by time- and space-resolved optical spectroscopy

Author

Bourquard, Florent, Colombier, Jean Philippe, Guillermin, Mathieu, Loir, Anne Sophie, Donnet, Christophe, Stoian, Razvan, Garrelie, Florence, Bourquard, Florent, Colombier, Jean Philippe, Guillermin, Mathieu, Loir, Anne Sophie, Donnet, Christophe, Stoian, Razvan, and Garrelie, Florence

Abstract

This paper focuses on the effect of temporal shaping of femtosecond laser pulses on laser ablation of aluminium and boron. The influence on plasma composition is deduced from optical emission investigations. Irradiation generated by the temporal tailoring of an incident laser pulse into double pulses or longer pulses is examined and compared to results deduced from hydrodynamic simulations of plasma temperature profiles. Above the ion formation threshold, increasing the delay in the double pulses sequence or increasing the pulse duration leads to an increase of the ion emission of the plasma plume of aluminium or boron. The observed increase with a saturation of ion emission at long delays or long pulse durations result from an interaction between the shaped laser pulse and the expanding matter after the onset of the plasma. Irradiation of boron with long pulses or double pulses reduces the production of nanoparticles, compared to the case of short pulses. Temporal shaping does not significantly affect the nanoparticle temperature, in spite of significant variations in the quantity of the ejected nanoparticles.

Published
2012

24. Dépôt de couches minces par ablation laser femtoseconde et nanoseconde : corrélation avec les propriétés du plasma

Author

Garrelie, Florence, Sikora, Aurélien, Guillermin, Mathieu, Loir, Anne Sophie, Donnet, Christophe, Colombier, Jean Philippe, Stoian, Razvan, Garrelie, Florence, Sikora, Aurélien, Guillermin, Mathieu, Loir, Anne Sophie, Donnet, Christophe, Colombier, Jean Philippe, and Stoian, Razvan

Abstract

Dépôt de couches minces par ablation laser femtoseconde et nanoseconde : corrélation avec les propriétés du plasma

Published
2010

25. Adaptive control of femtosecond laser induced ablation; consequences on plasma emission and thin film deposition

Author

Guillermin, Mathieu, Colombier, Jean Philippe, Garrelie, Florence, Stoian, Razvan, Valette, Stéphane, Liebig, Carl, Loir, Anne Sophie, Audouard, Eric, E-MRS 2009 Spring Meeting, Guillermin, Mathieu, Colombier, Jean Philippe, Garrelie, Florence, Stoian, Razvan, Valette, Stéphane, Liebig, Carl, Loir, Anne Sophie, Audouard, Eric, and E-MRS 2009 Spring Meeting

Abstract

Adaptive control of femtosecond laser induced ablation; consequences on plasma emission and thin film deposition

Published
2009

26. (Poster) Ultrashort Pulsed Laser Deposition of thin films with femtosecond and temporal shaped laser beam

Author

Garrelie, Florence, Guillermin, Mathieu, Sikora, Aurélien, Colombier, Jean Philippe, Loir, Anne Sophie, Stoian, Razvan, Donnet, Christophe, E-MRS 2009 Spring Meeting, Garrelie, Florence, Guillermin, Mathieu, Sikora, Aurélien, Colombier, Jean Philippe, Loir, Anne Sophie, Stoian, Razvan, Donnet, Christophe, and E-MRS 2009 Spring Meeting

Abstract

Ultrashort Pulsed Laser Deposition of thin films with femtosecond and temporal shaped laser beam

Published
2009

27. Control of femtosecond pulsed laser deposited thin films through plasma optimization by temporal shaping based on genetical algorithm

Author

Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne Sophie, Valette, Stephane, Audouard, Eric, International Conference on Metallurgical Coatings and Thin Films (2009), Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne Sophie, Valette, Stephane, Audouard, Eric, and International Conference on Metallurgical Coatings and Thin Films (2009)

Abstract

Control of femtosecond pulsed laser deposited thin films through plasma optimization by temporal shaping based on genetical algorithm

Published
2009

28. Ultrashort Pulsed Laser Deposition of thin films with femtosecond and temporal shaped laser beam

Author

Garrelie, Florence, Guillermin, Mathieu, Sikora, Aurélien, Colombier, Jean Philippe, Loir, Anne Sophie, Stoian, Razvan, Donnet, Christophe, E-MRS 2009 Spring Meeting, Garrelie, Florence, Guillermin, Mathieu, Sikora, Aurélien, Colombier, Jean Philippe, Loir, Anne Sophie, Stoian, Razvan, Donnet, Christophe, and E-MRS 2009 Spring Meeting

Abstract

Ultrashort Pulsed Laser Deposition of thin films with femtosecond and temporal shaped laser beam

Published
2009

29. Adaptive control of femtosecond laser ablation plasma emission

Author

Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne-Sophie, Audouard, Eric, Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne-Sophie, and Audouard, Eric

Abstract

The influence of temporal pulse shaping on plasma plume generated by ultrafast laser irradiation of aluminum is investigated. Time resolved plasma emission spectroscopy is coupled with a temporal shaping procedure in a closed loop. The ionic emission is enhanced relative to the neutral one via an adaptive optimization strategy. The plasma emission efficiency in case of optimized and ultrashort temporal shapes of the laser pulses are compared, evidencing an enhancement of the ionization degree of the plasma plume. Simplified temporal shapes of the femtosecond laser pulses are extracted from the optimized shape and their corresponding effect on laser induced plasma emission is discussed.

Published
2009

30. Adaptive control of femtosecond laser plasma generation and thin film deposition

Author

Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne Sophie, Audouard, Eric, Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne Sophie, and Audouard, Eric

Abstract

Adaptive control of femtosecond laser plasma generation and thin film deposition

Published
2008

31. Adaptive control of femtosecond laser plasma generation for thin film déposition

Author

Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne Sophie, Audouard, Eric, 1st International School "Laser-surface interactions for new materials production: tailoring structure and properties" (2008), Guillermin, Mathieu, Liebig, Carl, Garrelie, Florence, Stoian, Razvan, Loir, Anne Sophie, Audouard, Eric, and 1st International School "Laser-surface interactions for new materials production: tailoring structure and properties" (2008)

Abstract

Adaptive control of femtosecond laser plasma generation for thin film déposition

Published
2008

32. Ripples formation under femtosecond laser irradiation : mono and multi pulses studies and interpretation

Author

Guillermin, Mathieu, Dusser, Benjamin, Colombier, Jean Philippe, Loir, Anne Sophie, Garrelie, Florence, Stoian, Razvan, Audouard, Eric, Tischenko, Alexandre, Parriaux, Olivier, Pigeon, Florent, Guillermin, Mathieu, Dusser, Benjamin, Colombier, Jean Philippe, Loir, Anne Sophie, Garrelie, Florence, Stoian, Razvan, Audouard, Eric, Tischenko, Alexandre, Parriaux, Olivier, and Pigeon, Florent

Abstract

Ripples formation under femtosecond laser irradiation : mono and multi pulses studies and interpretation

Published
2008

33. Electrochemical Boron-Doped Diamond Film Microcells Micromachined with Femtosecond Laser: Application to the Determination of Water Framework Directive Metals

Author

Sbartai, Amel, primary, Namour, Philippe, additional, Errachid, Abdelhamid, additional, Krejči, Jan, additional, Šejnohová, Romana, additional, Renaud, Louis, additional, Larbi Hamlaoui, Mohamed, additional, Loir, Anne-Sophie, additional, Garrelie, Florence, additional, Donnet, Christophe, additional, Soder, Hervé, additional, Audouard, Eric, additional, Granier, Julien, additional, and Jaffrezic-Renault, Nicole, additional

Published
2012
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35. Study of the Si chemical bonding and semi-conductive behavior of SiCN coatings and their correlation with anti-corrosion properties

Author

Loir, A.-S., Pech, D., Steyer, Philippe, Gachon, Y., Héau, C., Sanchez-Lopez, J.-C., Instituto de Ciencia de Materiales de Sevilla (ICMSE), Universidad de Sevilla-Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Projet Européen STREP: MATECO, Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and LOIR, Anne-Sophie

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

Amorphous hydrogenated SiCN coatings have been deposited by a PACVD process on M2 steel and silicon substrates. The nitrogen content within the coatings was varied by changing the synthesis conditions. The chemical composition and nature of bonding have been studied by XPS and by X-ray-induced AES. The electrochemical and the semi-conductive properties were evaluated by polarization curves and by using the Mott-Schottky experiments, respectively. When increasin the N/Si ratio, we observed an increase of Si atoms inside the film structure, which were directly bonded to nitrogen. This gradual incorporation of N modified the electrochemical behavior of the films displaying a variation of the density of charge carriers and the semiconductive behavior (p- to n-type). The modified Auger parameter of silicon was used to determine the nature of the silicon chemical bonding inside the [Si-C-N]-based coatings and to predict their corrosion behavior.

Published
2006

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