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We show that photoluminescence properties of PbS nanocrystal thin films are directly related to film morphology and nanocrystal density. In densely packed PbS nanocrystal films, low-temperature donor-to-acceptor energy transfer is mainly responsible for the photoluminescence spectra narrowing and shift toward longer wavelengths. At elevated temperatures, back energy transfer is proposed to be responsible for an unusual photoluminescence intensity temperature dependence. In thin films with a low PbS nanocrystal density, the energy transfer is suppressed, and the effect is dramatically reduced., Comment: (8 pages, 7 figures)

The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism we determine the length scale over which the interface potential influences the effective mass.

Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while below $D\approx$ 4.6 nm: $E_{G}\sim D^{-2}$ due to electron/ hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small $D$.

In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this article, we first describe the successful deposition of Lanthanum Monosulfide via pulsed laser deposition on Si and MgO substrates and alumina templates. These thin films have been characterized by X-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy, ellipsometry, Raman spectroscopy, ultraviolet photoelectron spectroscopy and Kelvin probe measurements. For both LaS/Si and LaS/MgO thin films, the effective work function of the submicron thick thin films was determined to be about 1 eV from field emission measurements using the Scanning Anode Field Emission Microscopy technique. The physical reasons for these highly desirable low work function properties were explained using a patchwork field emission model of the emitting surface. In this model, nanocrystals of low work function materials having a <100> orientation perpendicular to the surface and outcropping it are surrounded by a matrix of amorphous materials with higher work function. To date, LaS thin films have been used successfully as cold cathode emitters with measured emitted current densities as high as 50 A/cm2. Finally, we describe the successful growth of LaS thin films on InP substrates and, more recently, the production of LaS nanoballs and nanoclusters using Pulsed Laser Ablation., Comment: 61 pages, 24 figures

We report exact diagonalization studies of inelastic light scattering in few-electron quantum dots under the strong confinement regime characteristic of self-assembled dots. We apply the orthodox (second-order) theory for scattering due to electronic excitations, leaving for the future the consideration of higher-order effects in the formalism (phonons, for example), which seem relevant in the theoretical description of available experiments. Our numerical results stress the dominance of monopole peaks in Raman spectra and the breakdown of selection rules in open-shell dots. The dependence of these spectra on the number of electrons in the dot and the incident photon energy is explicitly shown. Qualitative comparisons are made with recent experimental results., Comment: 11 pages, 11 figures

In a semiconductor heterostructure with type II energy band alignment, the spatial separation between electrons and holes slows down their radiative recombination. With increasing excitation intensity, Auger recombination quickly becomes the dominate recombination channel, and it produces carrier ejection from the quantum well. Here, we show that in Si/SiGe three-dimensional nanostructures, this efficient process facilitates the formation of an electron-hole plasma (EHP) and/or electron-hole droplets (EHDs) in thin Si barriers separating SiGe clusters. In contrast to conventional, strongly temperature dependent and slow radiative carrier recombination in bulk Si, this EHD/EHP luminescence in nanometer-thick Si layers is found to be nearly temperature independent with radiative lifetime approaching 10^-8 s, which is only slightly slower than that found in direct band gap III-V semiconductors., Comment: 14 pages, 4 fugures

In the paper, we present theoretical calculations of the cross section for inelastic light scattering by electronic excitations in a quantum dot charged with 42 electrons. The many-electron states involved in the computations are obtained in the framework of the Random Phase Approximation. The evaluation of energy-weighted sum rules allowed us to distinguish among single-particle (SPEs), collective charge (CDEs) and collective spin (SDEs) electronic excitations. Raman spectra in polarized and depolarized geometries are computed for a range of incident laser energies. The below-band-gap excitation regime reveals advantages for the identification of individual excited states contributing to the Raman spectra. The computed polarization ratios for Raman intensities show the breakdown of selection rules in the presence of a magnetic field. A new jump rule of Raman intensities at the band gap may help identifying the nature (charge or spin) of electronic excitations. Under extreme resonance (laser energy very close to the band gap), Raman spectra are dominated by SPEs. For incident laser energies 40 -- 50 meV above band gap, a correct desciption of Raman spectra is shown to require the proper account of energy widths of intermediate states., Comment: 11 pages, in spanish, submitted to Revista Cubana de Fisica, corrected version

We investigate the longitudinal spin relaxation arising due to spin-flip transitions accompanied by phonon emission in quantum dots where the strength of the Rashba spin-orbit coupling is a random function of the lateral (in-plane) coordinate on the spatial nanoscale. In this case the Rashba contribution to the spin-orbit coupling cannot be completely removed by applying a uniform external bias across the quantum dot plane. Due to the remnant random contribution, the spin relaxation rate cannot be decreased by more than two orders of magnitude even when the external bias fully compensates the regular part of the spin-orbit coupling., Comment: 13 pages, 4 figures

A theoretical description of electronic Raman scattering from GaAs/Al_{x}Ga_{1-x}As artificial atoms under the influence of an external magnetic field is presented. Raman spectra with laser excitation energy in the interval E_{gap}-30 meV to E_{gap} are computed in the polarized and depolarized geometry. The polarization ratios for the collective and single-particle excitations indicate a breakdown of the Raman polarization selection rules once the magnetic field is switched on. A Raman intensity jump rule at the band gap is predicted in our calculations. This rule can be a useful tool for identifying the physical nature (charge or spin) of the electronic excitations in quantum dots in low magnetic fields., Comment: Submitted to Phys. Rev. B as a rapid communication

A consistent semiquantitative theoretical analysis of electronic Raman scattering from many-electron quantum dots under resonance excitation conditions has been performed. The theory is based on random-phase-approximation-like wave functions, with the Coulomb interactions treated exactly, and hole valence-band mixing accounted for within the Kohn-Luttinger Hamiltonian framework. The widths of intermediate and final states in the scattering process, although treated phenomenologically, play a significant role in the calculations, particularly for well above band gap excitation. The calculated polarized and unpolarized Raman spectra reveal a great complexity of features and details when the incident light energy is swept from below, through, and above the quantum dot band gap. Incoming and outgoing resonances dramatically modify the Raman intensities of the single particle, charge density, and spin density excitations. The theoretical results are presented in detail and discussed with regard to experimental observations., Comment: Submitted to Phys. Rev. B

At absolute zero temperature, thermal noise vanishes when a physical system is in its ground state, but quantum noise remains as a fundamental limit to the accuracy of experimental measurements. Such a limitation, however, can be mitigated by the formation of squeezed states. Quantum mechanically, a squeezed state is a time-varying superposition of states for which the noise of a particular observable is reduced below that of the ground state at certain times. Quantum squeezing has been achieved for a variety of systems, including the electromagnetic field, atomic vibrations in solids and molecules, and atomic spins, but not so far for magnetic systems. Here we report on an experimental demonstration of spin wave (i.e., magnon) squeezing. Our method uses femtosecond optical pulses to generate correlations involving pairs of magnons in an antiferromagnetic insulator, MnF2. These correlations lead to quantum squeezing in which the fluctuations of the magnetization of a crystallographic unit cell vary periodically in time and are reduced below that of the ground state quantum noise. The mechanism responsible for this squeezing is stimulated second order Raman scattering by magnon pairs. Such squeezed states have important ramifications in the emerging fields of spintronics and quantum computing involving magnetic spin states or the spin-orbit coupling mechanism.