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207 results on '"Liu, YueBo"'

3. Strong interaction between graphene and localized hot spots in all-dielectric metasurfaces

Author

Xiao, Shuyuan, Liu, Tingting, Zhou, Chaobiao, Jiang, Xiaoyun, Cheng, Le, Liu, Yuebo, and Li, Zhong

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

The active photonics based on the two-dimensional material graphene has attracted enormous interests for developing the tunable and compact optical devices with high efficiency. Here we integrate graphene into the Fano-resonant all-dielectric metasurfaces consisting of silicon split resonators, and systematically investigate the strong interaction between graphene and the highly localized hot inside feed gaps in the near infrared regime. The numerical results show that the integrated graphene can substantially reduce the Fano resonance due to the coupling effect between the intrinsic absorption of graphene with enhanced electric field in the localized hotspot. With the manipulation of the surface conductivity via varying Fermi level and the layer number of graphene, the Fano resonance strength obtains a significant modulation and is even switched off. This works provides a great degree of freedom to tailor light-matter interaction at the nanoscale and opens up the avenues for actively tunable and integrated nanophotonic device applications, such as the optical biosensing, slow light and enhanced nonlinear effects.

Published
2019
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4. Independently tunable dual-spectral electromagnetically induced transparency in a terahertz metal-graphene metamaterial

Author

Liu, Tingting, Wang, Huaixing, Liu, Yong, Xiao, Longsheng, Zhou, Chaobiao, Liu, Yuebo, Xu, Chen, and Xiao, Shuyuan

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

We theoretically investigate the interaction between the conductive graphene layer with the dual-spectral electromagnetically induced transparency (EIT) metamaterial and achieve independent amplitude modulation of the transmission peaks in terahertz (THz) regime. The dual-spectral EIT resonance results from the strong near field coupling effects between the bright cut wire resonator (CWR) in the middle and two dark double-split ring resonators (DSRRs) on the two sides. By integrating monolayer graphene under the dark mode resonators, the two transmission peaks of the EIT resonance can exhibit independent amplitude modulation via shifting the Fermi level of the corresponding graphene layer. The physical mechanism of the modulation can be attributed to the variation of damping factors of the dark mode resonators arising from the tunable conductivity of graphene. This work shows great prospects in designing multiple-spectral THz functional devices with highly flexible tunability and implies promising applications in multi-channel selective switching, modulation and slow light.

Published
2018
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12. Tunable light trapping and absorption enhancement with graphene ring arrays

Author

Xiao, Shuyuan, Wang, Tao, Liu, Yuebo, Xu, Chen, Han, Xu, and Yan, Xicheng

Subjects
Physics - Optics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Surface plasmon resonance (SPR) has been intensively studied and widely employed for light trapping and absorption enhancement. In the mid-infrared and terahertz (THz) regime, graphene supports the tunable SPR via manipulating its Fermi energy and enhances light-matter interaction at the selective wavelength. In this work, periodic arrays of graphene rings are proposed to introduce tunable light trapping with good angle polarization tolerance and enhance the absorption in the light-absorbing materials nearby to more than one order. Moreover, the design principle here could be set as a template to achieve multi-band plasmonic absorption enhancement by introducing more graphene concentric rings into each unit cell. This work not only opens up new ways of employing graphene SPR, but also leads to practical applications in high-performance simultaneous multi-color photodetection with high efficiency and tunable spectral selectivity.

Published
2016
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13. An ultrasensitive and multispectral refractive index sensor design based on quad-supercell metamaterials

Author

Xiao, Shuyuan, Wang, Tao, Liu, Yuebo, Han, Xu, and Yan, Xicheng

Subjects
Physics - Optics
Abstract

Plasmonic metamaterials support the localized surface plasmon resonance (LSPR), which is sensitive to the change in the dielectric environment and highly desirable for ultrasensitive biochemical sensing. In this work, a novel design of supercell metamaterials of four mutually rotating split ring resonators (SRRs) is proposed, where simultaneous excitations of odd (N=1 and N = 3) and even (N=2) resonance modes are realized due to additional asymmetry from the rotation and show insensitivity to two orthogonal polarizations. The full utilization of these three resonance dips show bright prospects for multispectral application. As a refractive index (RI) sensor, ultrahigh sensitivities ~1000nm/RIU for LC mode (N=1) and ~500nm/RIU for plasmon mode (N=2) are obtained in near infrared (NIR) spectrum., Comment: Accepted Manuscript

Published
2015
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28. Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs

Author

Wang, Hongyue, Liu, Yuebo, Ge, Lei, Xu, Mingsheng, Shi, Yijun, Cai, Zongqi, Huang, Kai, He, ZhiYuan, Peng, Yan, Wang, Xiwei, and Wang, Jinyan

Abstract

In this article, gate bias ( ${V}_{\text {GS},\text {stress}}{)}$ effects on the hydrogen (H)-terminated polycrystalline diamond field effect transistors (FETs) are investigated. A 7- to 8-nm AlOx interface layer is found between the Al metal and polycrystalline diamond by electrical and microstructure characterization. The threshold voltage ( ${V}_{\text {TH}}{)}$ and ON-resistance ( ${R}_{\text {on}}{)}$ exhibit different changing trends under varying ${V}_{\text {GS},\text {stress}}$ . Specifically, a bidirectional shift of ${V}_{\text {TH}}$ is observed during gate bias stress. To explain the distinct behavior of ${V}_{\text {TH}}$ shift and ${R}_{\text {ON}}$ change occurring under gate bias, holes trapping by defects, H-motion, and surface leakage electron trapping models are proposed. Under negative gate bias, holes in 2-D hole gas channel are captured by the interface states and/or defects in the AlOx layer, resulting in a negative shift of ${V} _{\text {TH}}$ . Simultaneously, H-motion in the AlOx layer under gate bias leads to the generation of negative charges. Additionally, electrons in the surface leakage path are trapped by defects on the diamond surface in the access region, leading to decreased access region resistance. For a harsh gate bias, a high density of new defects is generated, and a defect density changes from $4.9\times 10^{{21}}$ ev−1cm−3 for the fresh device to $5.1\times 10^{{23}}$ ev−1cm−3 for the device after gate bias ( ${V}_{\text {GS},\text {stress}}$ = −4 V) which is characterized by using the low-frequency noise measurements. These findings highlight the importance of surface passivation and high-quality gate dielectric in suppressing charging effects and new defect generation in H-terminated polycrystalline diamond FETs, ultimately contributing to device stability.

Published
2024
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39. A new treatment strategy for thrombotic thrombocytopenic purpura in developing countries: A single dose rituximab-contained regimen

Author

Tan, YaXian, primary, Zhu, QiuLi, additional, Liu, Lin, additional, Liu, YueBo, additional, Yin, LieFen, additional, Yao, Jin, additional, Mu, Hongli, additional, Li, Yu, additional, Yin, LingMei, additional, Yu, JingXing, additional, Tao, Wei, additional, Wei, YuePing, additional, Bi, Hui, additional, and Zhou, ZePing, additional

Published
2022
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41. Double-Sided Sapphire Optrodes with Conductive Shielding Layers to Reduce Optogenetic Stimulation Artifacts

Author

Shen, Junyu, primary, Xu, Yanyan, additional, Xiao, Zhengwen, additional, Liu, Yuebo, additional, Liu, Honghui, additional, Wang, Fengge, additional, Yan, Chaokun, additional, Wang, Liyang, additional, Chen, Changhao, additional, Wu, Zhisheng, additional, Liu, Yang, additional, Mak, Peng Un, additional, Vai, Mang I., additional, Pun, Sio Hang, additional, Lei, Tim C., additional, and Zhang, Baijun, additional

Published
2022
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49. AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

Author

Liu, Honghui, primary, Liang, Zhiwen, additional, Yan, Chaokun, additional, Liu, Yuebo, additional, Wang, Fengge, additional, Xu, Yanyan, additional, Shen, Junyu, additional, Xiao, Zhengwen, additional, Wu, Zhisheng, additional, Liu, Yang, additional, Wang, Qi, additional, Wang, Xinqiang, additional, and Zhang, Baijun, additional

Published
2022
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