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Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial, for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method under inert environment, we successfully obtain high-quality ZrTe5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron-hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Our work helps to resolve the long-standing puzzles on ZrTe5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit., Comment: 38 pages, 4 main + 11 supplementary figures

Controlling the interplay between localized spins and itinerant electrons at the oxide interfaces can lead to exotic magnetic states. Here we devise SrTiO3/LaTiO3/SrTiO3 heterostructures with varied thickness of the LaTiO3 layer (n monolayers) to investigate the magnetic interactions in the two-dimensional electron gas system. The heterostructures exhibit significant Kondo effect when the LaTiO3 layer is rather thin (n = 2, 10), manifesting the strong interaction between the itinerant electrons and the localized magnetic moments at the interfaces, while the Kondo effect is greatly inhibited when n = 20. Notably, distinct Shubnikov-de Haas oscillations are observed and a nonzero Berry phase of {\pi} is extracted when the LaTiO3 layer is rather thin (n = 2, 10), which is absent in the heterostructure with thicker LaTiO3 layer (n = 20). The observed phenomena are consistently interpreted as a result of sub-band splitting and symmetry breaking due to the interplay between the interfacial Rashba spin-orbit coupling and the magnetic orderings in the heterostructures. Our findings provide a route for exploring and manipulating nontrivial electronic band structures at complex oxide interfaces.

Incorporating deep neural networks in image compressive sensing (CS) receives intensive attentions in multimedia technology and applications recently. As deep network approaches learn the inverse mapping directly from the CS measurements, the reconstruction speed is significantly faster than the conventional CS algorithms. However, for existing network based approaches, a CS sampling procedure has to map a separate network model. This may potentially degrade the performance of image CS with block-wise sampling because of blocking artifacts, especially when multiple sampling rates are assigned to different blocks within an image. In this paper, we develop a multichannel deep network for block-based image CS by exploiting inter-block correlation with performance significantly exceeding the current state-of-the-art methods. The significant performance improvement is attributed to block-wise approximation but full image removal of blocking artifacts. Specifically, with our multichannel structure, the image blocks with a variety of sampling rates can be reconstructed in a single model. The initially reconstructed blocks are then capable of being reassembled into a full image to improve the recovered images by unrolling a hand-designed block based CS recovery algorithm. Experimental results demonstrate that the proposed method outperforms the state-of-the-art CS methods by a large margin in terms of objective metrics and subjective visual image quality. Our source codes are available at https://github.com/siwangzhou/DeepBCS., Comment: 14 pages, 10 figures