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511 results on '"Liu, Yan-Cheng"'

2. Mass Spectrum and Theoretical Calculation for Azide Radical Complexes With Uranyl(Ⅴ) Cation ［UO2(N3)n］+(n=1-4)

Author

HONG Jing, HAN Chang-cai, FEI Ze-jie, TANG Yuan-yuan, LIU Yan-cheng, ZHOU Lu-lu, LIU Hong-tao, XIONG Xiao-gen, and DONG Chang-wu

Subjects
actinide coordination chemistry, uranyl complexes, computational chemistry, azide radical complexes, Nuclear engineering. Atomic power, TK9001-9401, Chemical technology, TP1-1185
Abstract

Coordination of uranium chemistry by multiligands has attracted attention as a way to obtain unique molecular structures and their possible use in environmental and nuclear waste disposal. In this work, mass spectrum with positive ions ［UO2(N3)n］+(n=0-4) as the dominant peaks generated by laser evaporation of uranium target with N2O as the carrier gas is reported. The associated quantitative calculations are carried out to explore structures and bonding interactions. The calculations show that N3 is bound to UO+2 as a radical and reveal that the bonding interaction in the whole system is found only between the first N3 ligand and uranium atom. Further localized molecular orbital analyses indicate the presence of multi-centered orbital delocalization in the system.

Published
2023
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12. Uncooled Infrared Detection Using CMOS Thermomechanical Capacitive Sensors

Author

Liu, Yan-Cheng and Lu, Michael S.-C.

Abstract

In this article, we investigate the sensing capabilities of $16\times 16$ complementary metal-oxide–semiconductor (CMOS) micromachined bimorph structures for uncooled infrared detection. By utilizing the inherent differences in thermal expansion coefficients between CMOS metallization and intermetal oxide layers, our sensing structure is innovatively fabricated without the need for additional thin-film deposition and lithographic processes. The in-pixel readout detects changes in capacitance caused by sensor displacement upon infrared absorption. Capacitive sensitivity is enhanced by the submicrometer air gap between electrodes after structural release. The thermomechanical characteristics of the bimorph cantilever are comprehensively analyzed through finite-element simulations. The measured results illustrate a noise equivalent temperature difference (NETD) of 820 mK and a thermal time constant of 6.4 ms for infrared detection.

Published
2024
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30. Adaptive Control of a Class of Nonlinear Systems with Parameterized Unknown Dynamics

Author

Sun, Jing-Chao, Wang, Ning, Liu, Yan-Cheng, Hutchison, David, Editorial Board Member, Kanade, Takeo, Editorial Board Member, Kittler, Josef, Editorial Board Member, Kleinberg, Jon M., Editorial Board Member, Mattern, Friedemann, Editorial Board Member, Mitchell, John C., Editorial Board Member, Naor, Moni, Editorial Board Member, Pandu Rangan, C., Editorial Board Member, Terzopoulos, Demetri, Editorial Board Member, Tygar, Doug, Editorial Board Member, Weikum, Gerhard, Series Editor, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Woeginger, Gerhard, Editorial Board Member, Hu, Xiaolin, editor, Xia, Yousheng, editor, Zhang, Yunong, editor, and Zhao, Dongbin, editor

Published
2015
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35. Uncooled Infrared Detection Using CMOS Transistor-Based Sensors

Author

He, Yi-Shun, Liu, Yan-Cheng, and Lu, Michael S.-C.

Abstract

In this article, we investigate the sensing capabilities of $8\times8$ complementary metal–oxide–semiconductor (CMOS) micromachined structures with thermal sensing transistors operating in both the subthreshold and saturation region for uncooled infrared detection. Unlike conventional microbolometer materials that require additional deposition steps, we leverage transistors integrated within a CMOS process to achieve comparable sensitivity in response to infrared-induced temperature changes. The enhanced sensitivity is attributed to the variation in carrier mobility and threshold voltage of the transistors. The sensors are fabricated in a 0.35- $\mu \text{m}$ CMOS process, each occupying an area of $46\times36\,\,\mu \text{m}^{{2}}$ . In our experiments, the operation in the subthreshold region exhibited a responsivity of $12\times106$ V/W and a noise equivalent temperature difference (NETD) of 563 mK at atmospheric pressure. In contrast, the saturation region presented an improved responsivity of $17.2\times106$ V/W and a lower NETD of 390 mK at atmospheric pressure. The results demonstrate the great potential of CMOS transistors as promising devices for uncooled infrared detection.

Published
2024
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