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As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron-phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by approximately 800% at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry., Comment: 7 pages, 4 figures

Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-level first-principles calculations. It is found that EPI has a larger effect on the lattice thermal conductivity of $p$-type doping compared to $n$-type doping in the same semiconductor at high charge carrier concentrations. The stronger EPI in $p$-type doping is attributed to the relatively higher electron density of states caused by the relatively larger $p$-orbital component. Furthermore, EPI has a stronger influence on the lattice thermal conductivity of $n$-type indirect bandgap semiconductors than $n$-type direct bandgap semiconductors. This is attributed to the relatively lower electron density of states in direct bandgap semiconductors stemming from the $s$-orbital component. This work reveals that there exist diverse responses in lattice thermal conductivity of $n$-type/$p$-type semiconductors, which can be attributed to asymmetric EPIs., Comment: 8 pages,5 figures

4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed, and the out-of-plane hole mobility of 4H-SiC can be enhanced by 200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries., Comment: 22 pages, 4 figures

Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extremely strong effects on the lattice thermal conductivity of 2D-GaN, which exhibits noticeable discrepancies with lattice thermal conductivity calculated from molecular dynamics. In this work, it is found that the fourth-order interatomic force constants (4th-IFCs) of 2D-GaN are quite sensitive to atomic displacement in the finite different method. The effects of the four-phonon scattering can be severely overestimated with non-convergent 4th-IFCs. The lattice thermal conductivity from three-phonon scattering is reduced by 65.6% due to four-phonon scattering. The reflection symmetry allows significantly more four-phonon processes than three-phonon processes. It was previously thought the electron-phonon interactions have significant effects on the lattice thermal conductivity of two-dimensional materials. However, the effects of phonon-electron interactions on the lattice thermal conductivity of both n-type and p-type 2D-GaN at high charge carrier concentrations can be neglected due to the few phonon-electron scattering channels and the relatively strong four-phonon scattering., Comment: 6 pages, 3 figures

Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy doping. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fr\"ohlich interaction. Surprisingly, our investigation reveals weak effects of electron-phonon interactions on the lattice thermal conductivity of n-type GaN at ultra-high electron concentrations and the impact of the Fr\"ohlich interaction can be ignored. The small phonon-electron scattering rate is attributed to the limited scattering channels, quantified by the Fermi surface nesting function. In contrast, there is a significant reduction in the lattice thermal conductivity of p-type GaN at high hole concentrations due to the relatively larger Fermi surface nesting function. Meanwhile, as p-type GaN has relatively smaller electron-phonon matrix elements, the reduction in lattice thermal conductivity is still weaker than that observed in p-type silicon. Our work provides a deep understanding of thermal transport in doped GaN and the conclusions can be further extended to other wide-bandgap semiconductors, including $\beta$-Ga2O3, AlN, and ZnO.

Interface impedes heat flow in heterostructures and the interfacial thermal resistance (ITR) has become a critical issue for thermal dissipation in electronic devices. To explore the mechanism leading to the ITR, in this work, the dynamic behaviors of phonons passing through the GaN/AlN interface with an amorphous interlayer is investigated by using phonon wave packet simulation. It is found the amorphous interlayer significantly impedes phonon transport across the interface, and leads to remarkable phonon mode conversions, such as LA$\rightarrow$TA, TA$\rightarrow$LA, and LA$\rightarrow$TO conversion. However, due to mode conversion and inelastic scattering, we found a portion of high-frequency TA phonons, which are higher than the cut-off frequency and cannot transmit across the ideal sharp interface, can partially transmit across the amorphous interlayer, which introduces additional thermal transport channels through the interface and has positive effect on interfacial thermal conductance. According to phonon transmission coefficient, it is found the ITR increases with increasing of amorphous interlayer thickness L. The phonon transmission coefficient exhibits an obvious oscillation behavior, which is attributed to the multiple phonon scattering in the amorphous interlayer, and the oscillation period is further revealed to be consistent with the theoretical prediction by the two-beam interference equation. In addition, obvious phonon frequency shifts and phonon energy localization phenomena were observed in the amorphous interlayer. Finally, to improve phonon transmission, the interface morphology was further optimized via the annealing reconstruction technique, which results in re-crystallization of the amorphous interlayer and the decrease of ITR by ~21% as L=2 nm.

Edge termination plays a vital role in determining the properties of 2D materials. By performing compelling ab initio simulations, a lowest-energy U-edge [ZZ(U)] reconstruction is revealed in the bilayer phosphorene. Such reconstruction reduces 60% edge energy compared with the pristine one and occurs almost without energy barrier, implying it should be the dominating edge in reality. The electronic band structure of phosphorene nanoribbon with such reconstruction resembles that of intrinsic 2D layer, exhibiting nearly edgeless band characteristics. Although ZZ(U) changes the topology of phosphorene nanoribbon (PNR), simulated TEM, STEM and STM images indicates it is very hard to be identified. One possible identify method is IR/Raman analyses because ZZ(U) edge alters vibrational modes dramatically. Beyond, it also increases the thermal conductivity of PNR 1.4 and 2.3 times than the pristine and Klein edges.