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This article proposes a design of miniaturized high selectivity band‐pass filter by using a dual‐mode patch resonator with two pairs of uniform slots set in the four corners. The effect of the pairs of the slots on the resonant modes of the square patch resonator is investigated first. For filter design, the slots set in the four corners of the patch resonator are provided as the perturbation elements to tune the resonant modes and thus form the filter response. The pairs of the slots reduce the fundamental resonant frequency and thus miniaturize the filter size. The designed filter is simulated and measured at 1.95 GHz for the fifth generation applications with narrow bandwidth. High band selectivity is obtained due to the creation of transmission zeros near the passband edges. The filter performances are measured by network analyzer and the results are discussed. [ABSTRACT FROM AUTHOR]

A Cu/SiO2/Pt structure is used to investigate the retention failure mechanism of the low-resistance-state (LRS) of resistive-switching behavior. Resistance switching is determined by the electrodeposition and dissolution of a Cu-conducting filament within the SiO2layer. The LRS retention time is decreased with an increase in LRS resistance, which is probably caused by the dissolution of the Cu filament near the Cu/SiO2interface. The activation energy of LRS retention is 1.78 eV, which is close to that of the Cu diffusion in the SiO2film. The cone-shaped Cu filament model and the diffusion phenomenon are used to examine the failure mechanism of LRS retention. [ABSTRACT FROM AUTHOR]

In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes. [ABSTRACT FROM AUTHOR]

A significant advancement of cw lasing in Cr4+:Y3Al5O12 (Cr4+:YAG) double-clad crystal fiber grown by the codrawing laser-heated pedestal growth technique was demonstrated at RT. The optical-to-optical slope efficiency of 33.9% is the highest, to the best of our knowledge, among all Cr4+:YAG lasers, whether they are in bulk or fiber forms. The low-threshold lasing of 78.2 mW and high efficiency are in good agreement with the simulation. The keys to the high laser efficiency are twofold: one is the improved Cr4+ emission cross section and fluorescence lifetime due to release of the strain on the distorted Cr4+ tetrahedron, which also mitigates photobleaching in Cr4+:YAG; the other is the improved core uniformity at long fiber lengths. In addition, because of the low threshold, the impact of excited state absorption of the pump light is significantly reduced. The effects of crystal-orientation, self-selected, and pump-dependent linear polarization states were also addressed.