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Mica is a promising substrate for flexible photonic applications because it can be fabricated using wafer‐scale multiple exfoliations. However, the large lattice mismatch between mica and III‐nitrides hinders their application in III‐nitride semiconductor devices. In this study, two types of light‐emitting diode (LED) epilayers, blue and green, are epitaxially fabricated on 2‐inch exfoliated mica substrates using sputtered AlN as a buffer layer to address the lattice mismatch. The LED epilayers on mica substrate exhibit excellent single‐crystalline quality with a low threading dislocation density of 2.07 × 109 cm−2 in the GaN region and smooth surface morphology with a root mean square (RMS) roughness of 0.58 nm in a 5 × 5 µm2 scanned area, demonstrating that mica is an excellent platform for III‐nitride semiconductors. Moreover, the structures are reproduced stably on multiple exfoliated mica at the wafer scale, which verified the reusability and reproducibility of III‐nitride/mica in terms of crystallinity, surface morphology, and transparency. Strong electroluminescence of the LED epilayers confirmed the potential of mica in electrically driven flexible opto‐electronics. Therefore, this results demonstrated the potential of mica substrates in III‐nitride semiconductors and provide a novel pathway for revolutionizing the fabrication of III‐nitride‐based flexible devices. [ABSTRACT FROM AUTHOR]

In this work, we report InAsP-based dislocation filter layers (DFLs) for InP heteroepitaxy on CMOS-standard (001) Si substrates, demonstrating a threading dislocation density of 3.7 × 107 cm−2. The strain introduced by InAsP induces dislocation bending at the InAsP/InP interface, thereby facilitating the reaction and annihilation of dislocations during their lateral glide. Concurrently, the InP spacer exhibits tensile strain, leading to the formation of stacking faults (SFs). With a comprehensive analysis utilizing x-ray diffraction, electron channeling contrast imaging, and transmission electron microscopy, the effects of DFL-induced strain on dislocations and SFs are investigated. Fine-tuning the strain conditions allowed low-dislocation-density while SF-suppressed, anti-phase boundary free InP on Si. This work, therefore, provides a useful buffer engineering scheme for monolithic integration of InP-based electronic and photonic devices onto the industry-standard silicon platform. [ABSTRACT FROM AUTHOR]

Light exposure has been proven to have a significant impact on human health. As a result, researchers are increasingly exploring its potential benefits and drawbacks. With advancements in understanding light and the manufacturing of light sources, modern health lighting has become widely utilized in daily life and plays a critical role in the prevention and treatment of various illnesses. The use of light in healthcare is a global trend, with many countries actively promoting the development and application of relevant scientific research and medical technology. This field has gained worldwide attention and support from scientists and doctors alike. In this review, we examine the application of lighting in human health and recent breakthroughs in light exposure related to pathology, therapeutic strategies, molecular changes, and more. Finally, we also discuss potential future developments and areas of application. [ABSTRACT FROM AUTHOR]

Compelling evidence indicates that dyslipidemia is positively associated with oral lichen planus (OLP). The types and magnitude of lipid metabolism disturbance in peripheral blood of OLP patients have been investigated in different studies. Yet, consensus on how these different lipid components varied in levels for the development of OLP lesions has not been reached so far. Herein, a total of 8 eligible studies were recognized, which enrolled 533 cases of OLP and 499 healthy controls. The analysis showed that the average total triglyceride (TG), total cholesterol (TC), low-density lipoprotein cholesterol (LDL-C) levels were considerably higher, and high-density lipoprotein cholesterol (HDL-C) levels were significantly lower in OLP patients compared to healthy controls. Collectively, the lipid profile panel maybe serve as the potential predictive indicator for screening OLP. [ABSTRACT FROM AUTHOR]

SIRT6 is a key member of the mammalian sirtuin family of conserved nicotinamide adenine dinucleotide (NAD+)‐dependent deacetylases. Previous studies have shown that SIRT6 can regulate metabolism, DNA damage repair and aging. Ovarian aging process usually share similar mechanisms with general aging, which is characterized by decreases in both numbers of ovarian follicles and the quality of oocytes. It is reported that the expression level of SIRT6 was significantly decreased in the ovaries of aged mice, and the level of SIRT6 was positively correlated with ovarian reserve, indicating that SIRT6 may be potential markers of ovarian aging. However, its biological roles in follicular development are still unclear. Here, we explored the effect of SIRT6 on follicular development and found that ovarian development was interrupted in SIRT6 knockout (KO) mice, leading to disruptions of puberty and the estrus cycle, significant decreases in numbers of secondary and antral follicles, and decreased collagen in the ovarian stroma. Plod1, a lysyl hydroxylase that is vital for collagen crosslinking and deposition, was decreased at both the mRNA and protein levels in SIRT6‐deficient ovaries and granulosa cells (GCs). Additionally, we found abnormal estrogen levels in both SIRT6 KO mice and SIRT6 KD GCs, accompanied by decreases in the levels of the estrogen biosynthesis genes Cyp11a1, Cyp19a1, Mgarp, and increases in the levels of TNF‐α and NF‐κB. These results confirmed the effect of SIRT6 on follicular development and revealed a possible molecular mechanism for SIRT6 involvement in follicular development via effects on estrogen biosynthesis and collagen formation. Our study confirmed that SIRT6 was involved in follicular development in mice in a way that SIRT6 deficiency downregulated the expression level of estrogen biosynthesis related genes Cyp11a1, Cyp19a1, Mgarp, and the expression level of collagen formation gene Plod1. And this molecular mechanism caused ovarian hypoplasia, which is characterized by disruptions of puberty and the estrus cycle, significant decreases in numbers of secondary and antral follicles, as well as decreased collagen in the ovarian stroma. [ABSTRACT FROM AUTHOR]

It is known to all that Wnt signaling pathway plays an important role in the early development of tooth. Our previous research found that Wnt signaling pathway played crucial roles in dental development, and mutations in antagonist of Wnt signaling pathway may lead to the formation of supernumerary teeth. However, the expression pattern of Wnt signaling molecules in early development of tooth, especially genes with stage specificity, remains unclear. Hence, we applied RNA-seq analysis to determine the expression levels of wnt signal molecules at five different stages of rat first molar tooth germ. In addition, after literature review we summarized the function of Wnt signaling molecules during tooth development and the relationship between Wnt signaling molecules variation and tooth agenesis. Our research may have implications for exploring the role of Wnt signaling molecules in different stages of tooth development. [ABSTRACT FROM AUTHOR]

InGaN red light emitting diode (LED) is one of the crucial bottlenecks that must be broken through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of InGaN LEDs drops rapidly as the emission spectra go from blue/green to red range due to the poor quality of high‐indium‐content InGaN materials. Here, high‐performance InGaN red LEDs on sapphire grown by metal–organic chemical vapor deposition through strain modulation are reported. A composite buffer layer is proposed to increase the surface lattice constant of GaN and hence successfully enhances the indium incorporation efficiency of the following InGaN active layers. Consequently, a high‐efficiency InGaN red mini‐LED chip (mesa area: 100 × 200 µm2) with a peak wavelength of 629 nm and an external quantum efficiency of 7.4% is realized. Finally, a full‐color nitride mini‐LED display panel with 74.1% coverage of Rec.2020 color gamut by using the InGaN red mini‐LED chips is fabricated. The study signifies the great potentials of full‐nitrides high‐resolution full‐color mini/micro‐LED displays. [ABSTRACT FROM AUTHOR]