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Wearable human activity sensors developed in the past decade show a distinct trend of becoming thinner and more imperceptible while retaining their electrical qualities, with graphene e-tattoos, as the ultimate example. A persistent challenge in modern wearables, however, is signal degradation due to the distance between the sensor's recording site and the signal transmission medium. To address this, we propose here to directly utilize human skin as a signal transmission medium as well as using low-cost gel electrodes for rapid probing of 2D transistor-based wearables. We demonstrate that the hypodermis layer of the skin can effectively serve as an electrolyte, enabling electrical potential application to semiconducting films made from graphene and other 2D materials placed on top of the skin. Graphene transistor tattoos, when biased through the body, exhibit high charge carrier mobility (up to 6500 2V-1s-1), with MoS2 and PtSe2 transistors showing mobilities up to 30 cm2V-1s-1 and 1 cm2V-1s-1, respectively. Finally, by introducing a layer of Nafion to the device structure, we observed neuromorphic functionality, transforming these e-tattoos into neuromorphic bioelectronic devices controlled through the skin itself. The neuromorphic bioelectronic tattoos have the potential for developing self-aware and stand-alone smart wearables, crucial for understanding and improving overall human performance.

Analog neuromorphic computing systems emulate the parallelism and connectivity of the human brain, promising greater expressivity and energy efficiency compared to digital systems. Though many devices have emerged as candidates for artificial neurons and artificial synapses, there have been few device candidates for artificial dendrites. In this work, we report on biocompatible graphene-based artificial dendrites (GrADs) that can implement dendritic processing. By using a dual side-gate configuration, current applied through a Nafion membrane can be used to control device conductance across a trilayer graphene channel, showing spatiotemporal responses of leaky recurrent, alpha, and gaussian dendritic potentials. The devices can be variably connected to enable higher order neuronal responses, and we show through data-driven spiking neural network classification simulations that overall spiking activity is reduced by up to 15% without accuracy loss while low frequency operation is stabilized. This positions the GrADs as strong candidates for energy efficient bio-interfaced spiking neural networks.

The spatiotemporal nature of neuronal behavior in spiking neural networks (SNNs) make SNNs promising for edge applications that require high energy efficiency. To realize SNNs in hardware, spintronic neuron implementations can bring advantages of scalability and energy efficiency. Domain wall (DW) based magnetic tunnel junction (MTJ) devices are well suited for probabilistic neural networks given their intrinsic integrate-and-fire behavior with tunable stochasticity. Here, we present a scaled DW-MTJ neuron with voltage-dependent firing probability. The measured behavior was used to simulate a SNN that attains accuracy during learning compared to an equivalent, but more complicated, multi-weight (MW) DW-MTJ device. The validation accuracy during training was also shown to be comparable to an ideal leaky integrate and fire (LIF) device. However, during inference, the binary DW-MTJ neuron outperformed the other devices after gaussian noise was introduced to the Fashion-MNIST classification task. This work shows that DW-MTJ devices can be used to construct noise-resilient networks suitable for neuromorphic computing on the edge., Comment: 10 pages, 4 figures

The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy operation, and radiation hardness. Here, we augment the DW-MTJ logic gate with voltage controlled magnetic anisotropy (VCMA) to improve the reliability of logical concatenation in the presence of realistic process variations. VCMA creates potential wells that allow for reliable and repeatable localization of domain walls. The DW-MTJ logic gate supports different fanouts, allowing for multiple inputs and outputs for a single device without affecting area. We simulate a systolic array of DW-MTJ Multiply-Accumulate (MAC) units with 4-bit and 8-bit precision, which uses the nonvolatility of DW-MTJ logic gates to enable fine-grained pipelining and high parallelism. The DW-MTJ systolic array provides comparable throughput and efficiency to state-of-the-art CMOS systolic arrays while being radiation-hard. These results improve the feasibility of using domain wall-based processors, especially for extreme-environment applications such as space., Comment: 8 pages, 8 figures (main paper) + 4 pages, 5 figures (supplementary information)

Stochasticity is ubiquitous in the world around us. However, our predominant computing paradigm is deterministic. Random number generation (RNG) can be a computationally inefficient operation in this system especially for larger workloads. Our work leverages the underlying physics of emerging devices to develop probabilistic neural circuits for RNGs from a given distribution. However, codesign for novel circuits and systems that leverage inherent device stochasticity is a hard problem. This is mostly due to the large design space and complexity of doing so. It requires concurrent input from multiple areas in the design stack from algorithms, architectures, circuits, to devices. In this paper, we present examples of optimal circuits developed leveraging AI-enhanced codesign techniques using constraints from emerging devices and algorithms. Our AI-enhanced codesign approach accelerated design and enabled interactions between experts from different areas of the microelectronics design stack including theory, algorithms, circuits, and devices. We demonstrate optimal probabilistic neural circuits using magnetic tunnel junction and tunnel diode devices that generate an RNG from a given distribution.

Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven magnetization dynamics, often using spin transfer torque (STT) current amplitude to control the random switching of the MTJ free layer magnetization, here called the stochastic write method. There are additional knobs to control the MTJ-RNG, including voltage-controlled magnetic anisotropy (VCMA) and spin orbit torque (SOT), and there is need to systematically study and compared these methods. We build an analytical model of the MTJ to characterize using VCMA and SOT to generate random bit streams. The results show that both methods produce high quality, uniformly distributed bitstreams. Biasing the bitstreams using either STT current or an applied magnetic field shows an approximately sigmoidal distribution vs. bias amplitude for both VCMA and SOT, compared to less sigmoidal for stochastic write for the same conditions. The energy consumption per sample is calculated to be 0.1 pJ (SOT), 1 pJ (stochastic write), and 20 pJ (VCMA), revealing the potential energy benefit of using SOT and showing using VCMA may require higher damping materials. The generated bitstreams are then applied to two example tasks: generating an arbitrary probability distribution using the Hidden Correlation Bernoulli Coins method and using the MTJ-RNGs as stochastic neurons to perform simulated annealing in a Boltzmann machine, where both VCMA and SOT methods show the ability to effectively minimize the system energy with small delay and low energy. These results show the flexibility of the MTJ as a true RNG and elucidate design parameters for optimizing the device operation for applications., Comment: 9 pages, 6 figures

CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/m^2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.

In neuromorphic computing, artificial synapses provide a multi-weight conductance state that is set based on inputs from neurons, analogous to the brain. Additional properties of the synapse beyond multiple weights can be needed, and can depend on the application, requiring the need for generating different synapse behaviors from the same materials. Here, we measure artificial synapses based on magnetic materials that use a magnetic tunnel junction and a magnetic domain wall. By fabricating lithographic notches in a domain wall track underneath a single magnetic tunnel junction, we achieve 4-5 stable resistance states that can be repeatably controlled electrically using spin orbit torque. We analyze the effect of geometry on the synapse behavior, showing that a trapezoidal device has asymmetric weight updates with high controllability, while a straight device has higher stochasticity, but with stable resistance levels. The device data is input into neuromorphic computing simulators to show the usefulness of application-specific synaptic functions. Implementing an artificial neural network applied on streamed Fashion-MNIST data, we show that the trapezoidal magnetic synapse can be used as a metaplastic function for efficient online learning. Implementing a convolutional neural network for CIFAR-100 image recognition, we show that the straight magnetic synapse achieves near-ideal inference accuracy, due to the stability of its resistance levels. This work shows multi-weight magnetic synapses are a feasible technology for neuromorphic computing and provides design guidelines for emerging artificial synapse technologies., Comment: 27 pages 6 figures 1 table

Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial neuronal functionality when executing repeated tasks. In this study, we demonstrate that this behavior can be implemented in DW-MTJ artificial neurons via three alternative mechanisms: shape anisotropy, magnetic field, and current-driven soft reset. Using micromagnetics and analytical device modeling to classify the Optdigits handwritten digit dataset, we show that edgy-relaxed behavior improves both classification accuracy and classification rate for ordered datasets while sacrificing little to no accuracy for a randomized dataset. This work establishes methods by which artificial spintronic neurons can be flexibly adapted to datasets., Comment: 5 pages, 5 figures

We consider the Domain Adaptation problem, also known as the covariate shift problem, where the distributions that generate the training and test data differ while retaining the same labeling function. This problem occurs across a large range of practical applications, and is related to the more general challenge of transfer learning. Most recent work on the topic focuses on optimization techniques that are specific to an algorithm or practical use case rather than a more general approach. The sparse literature attempting to provide general bounds seems to suggest that efficient learning even under strong assumptions is not possible for covariate shift. Our main contribution is to recontextualize these results by showing that any Probably Approximately Correct (PAC) learnable concept class is still PAC learnable under covariate shift conditions with only a polynomial increase in the number of training samples. This approach essentially demonstrates that the Domain Adaptation learning problem is as hard as the underlying PAC learning problem, provided some conditions over the training and test distributions. We also present bounds for the rejection sampling algorithm, justifying it as a solution to the Domain Adaptation problem in certain scenarios.