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96 results on '"Liu, Ren-Shuo"'

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1. A CMOS-integrated spintronic compute-in-memory macro for secure AI edge devices

2. A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices

4. 8-Bit Precision 6T SRAM Compute-in-Memory Macro Using Global Bitline-Combining Scheme for Edge AI Chips

5. ISSA: Architecting CNN Accelerators Using Input-Skippable, Set-Associative Computing-in-Memory

6. 34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices

7. 34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices

8. A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

18. A 8-b-Precision 6T SRAM Computing-in-Memory Macro Using Segmented-Bitline Charge-Sharing Scheme for AI Edge Chips

19. An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices

20. A Nonvolatile AI-Edge Processor With SLC–MLC Hybrid ReRAM Compute-in-Memory Macro Using Current–Voltage-Hybrid Readout Scheme

21. A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips

22. An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips

23. A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W

24. A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices

25. A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices

26. 8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices

27. An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices

28. A Nonvolatile AI-Edge Processor With SLC–MLC Hybrid ReRAM Compute-in-Memory Macro Using Current–Voltage-Hybrid Readout Scheme

29. A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips

32. ISSA

33. A 0.8 V Intelligent Vision Sensor With Tiny Convolutional Neural Network and Programmable Weights Using Mixed-Mode Processing-in-Sensor Technique for Image Classification

35. An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices

36. A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices

37. Two-Way Transpose Multibit 6T SRAM Computing-in-Memory Macro for Inference-Training AI Edge Chips

38. A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips

43. 16.1 A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

44. 16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips

46. A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

47. A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors

48. 5.9 A 0.8V Multimode Vision Sensor for Motion and Saliency Detection with Ping-Pong PWM Pixel

49. 15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips

50. 15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips

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