Search

The von Neumann bottleneck has long been a significant obstacle to the advancement of the era of intelligent computing. Neuromorphic devices are considered a promising solution to overcome this bottleneck. These devices draw inspiration from the information processing and computing capabilities of neurons in the human brain. Nevertheless, biomimetic synaptic devices used in neural network computing encounter significant challenges, including high nonlinearity in regulation, limited abundance of state conductance, and restrictions in unidirectional plasticity. Here, a memristor synaptic device is reported that utilizes the ion migration properties of MoTe2/MoS2−xOx heterojunction interface. This device demonstrates remarkable exceptional linearity, extensive dynamic regulation, and bidirectional independently controllable synaptic plasticity when subjected to bimodal regulation using electrical and optical signals. In addition, it shows significant paired‐pulse facilitation, empirical learning, and spike‐timing‐dependent properties. Furthermore, a deep learning framework is constructed to evaluate the reliability of devices in neuromorphic computation. The electronic synapses achieve high accuracy rates of 99.3% and 96.5% in recognizing digits and floral graphics, while photonic synapses achieve 95.3% and 91.5%. These findings emphasize the superior performance of photonic synapses in synaptic computation and provide a potential methodology for integrating multimodal neuromorphic hardware with artificial intelligence computing systems. [ABSTRACT FROM AUTHOR]

Ferroelectric materials with the typical perovskite structure are widely used in capacitors, ultrasonic devices, oil drilling, transducers, and other fields. Lead-lanthanum-zirconium-titanate ceramics co-doped with Sn and Ba, have been widely investigated. However, there is little attention has been focused on the dielectric properties of barium-lanthanum-zirconium-titanate. Thus, in this work, Sn doped Ba0.955La0.03Zr0.02Ti0.98O3 ferroelectric ceramics were prepared via a classical high-temperature solid state reaction. Scanning Electron Microscopy (SEM) was used to observe the surface appearance of ceramics. The X-ray diffraction (XRD) patterns at room temperature, indicate that the ceramics are well crystallized. Impedance properties and dielectric properties reflect the characteristic of typical high temperature dielectric relaxation behavior. The conductive activation energy and the relaxation activation energy are obtained through the calculation of the Arrhenius law. The fitting results show that the dielectric relaxation behavior at high-temperature, was related to the oxygen defect. The electrical modulus verified the partial short-range carrier migration, also contribute to the high-temperature dielectric properties. [ABSTRACT FROM AUTHOR]

The structural phase transitions for the hcp, bcc, dhcp, and fcc of magnesium at hydrostatic pressures larger than about 200 GPa at zero temperature are studied by first-principles total energy calculations. The plane-wave basis pseudopotential method has been adopted, in which the generalized gradient approximation implanted in the CASTEP code is employed. By comparing the enthalpy differences of the hcp structure with other three structures under different pressures, it can be seen that when the pressure becomes higher than about 65, 130, and 190 GPa, the bcc, dhcp, and fcc structures become more stable relative to the hcp structure, respectively. Due to the lowest enthalpy value of the bcc structure above 65 GPa, it can be deduced that magnesium may transform to the bcc structure from the ground state hcp structure around 65 GPa, but no further phase transitions occur without additionally applying high temperature. In addition, the equation of state of magnesium is calculated, indicating that bcc structure is the softest phase. [ABSTRACT FROM AUTHOR]