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IntroductionThis study aimed to evaluate morphological changes in cortical and subcortical regions and their asymmetrical differences in individuals with subjective cognitive decline (SCD) and mild cognitive impairment (MCI). These morphological changes may provide valuable insights into the early diagnosis and treatment of Alzheimer's disease (AD).MethodsWe conducted structural MRI scans on a cohort comprising 62 SCD patients, 97 MCI patients, and 70 age-, sex-, and years of education-matched healthy controls (HC). Using Freesurfer, we quantified surface area, thickness, the local gyrification index (LGI) of cortical regions, and the volume of subcortical nuclei. Asymmetry measures were also calculated. Additionally, we explored the correlation between morphological changes and clinical variables related to cognitive decline.ResultsCompared to HC, patients with MCI exhibited predominantly left-sided surface morphological changes in various brain regions, including the transverse temporal gyrus, superior temporal gyrus, insula, and pars opercularis. SCD patients showed relatively minor surface morphological changes, primarily in the insula and pars triangularis. Furthermore, MCI patients demonstrated reduced volumes in the anterior-superior region of the right hypothalamus, the fimbria of the bilateral hippocampus, and the anterior region of the left thalamus. These observed morphological changes were significantly associated with clinical ratings of cognitive decline.ConclusionThe findings of this study suggest that cortical and subcortical morphometric changes may contribute to cognitive impairment in MCI, while compensatory mechanisms may be at play in SCD to preserve cognitive function. These insights have the potential to aid in the early diagnosis and treatment of AD.

Abstract Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays.

Abstract High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high saturation mobility of 47.9 cm2 V−1 s−1. The reliability of the mobility values is critically validated and assessed by four‐probe measurements, the transfer‐length method, and the temperature‐dependence. X‐ray photoelectron spectra are combined with C–V measurements to characterize the interface, and the results show that a two‐dimensional electron gas (2DEG)‐like state accumulates at the In2O3/IGZO interface. However, this state only forms in the subthreshold region and does not cause the high carrier mobility in the region above the threshold. Instead, the enhanced carrier mobility results from the intrinsic high mobility of the In2O3, the smooth surface, and the low‐defect states in the In2O3/IGZO bilayer with a good percolation transport path.

The effect of interfacial layer (SnOx) on the performance of the complementary electrochromic devices (ECDs) was examined, revealing that the SnOx/WO3 bilayer cathodes could enhance the electrochromic performance, such as a superior long-term cycling stability over 10,000 cycles, a high coloration efficiency of 101.61 cm2 C−1 and a maximum transmittance modulation of 49.27%@633 nm. Moreover, compared with the single layer WO3, the SnOx/WO3 bilayer exhibited improved electrochemical activities and reaction kinetics. The probable explanation is that the introduced interfacial layer can boost the double injection of ions and electrons, balance the transport of ions and electrons, and protect the electrode from degradation by serving as a buffer layer during coloration/bleaching cycles. These results further provide a valuable insight for improving the electrochromic properties of the films instead of relying on conventional methods such as nanostructural or compositional control.

BackgroundMild cognitive impairment (MCI) is a common neurological disorder. Moxibustion has been shown to be effective in treating MCI, but its therapeutic mechanisms still remain unclear. This study mainly aimed to investigate the modulation effect of moxibustion treatment for patients with MCI by functional magnetic resonance imaging (fMRI).MethodsA total of 47 patients with MCI and 30 healthy controls (HCs) participated in resting-state fMRI imaging (rs-fMRI) scans. Patients with MCI were randomly divided into true moxibustion group (TRUE, n = 30) and sham moxibustion group (SHAM, n = 17). The degree centrality (DC) approach was applied to distinguish altered brain functions. Correlation analysis was then performed to examine the relationships between the neuroimaging findings and clinical symptoms.ResultsCompared with HCs, patients with MCI mainly showed decreased DC in the left middle frontal cortex (MFC) and bilateral middle cingulate cortex (MCC). After moxibustion treatment, the SHAM group had no significant DC findings, while TRUE group mainly showed significant increased DC in the bilateral MFC and MCC, as well as decreased DC in the left middle occipital cortex (MOC). Repeated measures analysis of variance (ANOVA) showed significant interactions between the two groups of patients with MCI. In addition, the higher Mini-Mental State Examination (MMSE) score was significantly positively correlated with increased DC in the right MFC and left MCC after moxibustion treatment.ConclusionOur findings demonstrate that the potential value of moxibustion treatment on MCI, which adds new insights into the popular view that moxibustion treatment may slow cognitive decline in patients with MCI.

Back groundSubjective cognitive decline (SCD) may be the first clinical sign of Alzheimer’s disease (AD). The possible neural mechanisms of SCD are not well known. This study aimed to compare percent amplitude of fluctuation (PerAF) and structural covariance patterns in patients with SCD and healthy controls (HCs).MethodsWe enrolled 53 patients with SCD and 65 HCs. Resting-state functional magnetic resonance imaging (MRI) data and T1-weighted anatomical brain 3.0-T MRI scans were collected. The PerAF approach was applied to distinguish altered brain functions between the two groups. A whole-brain voxel-based morphometry analysis was performed, and all significant regions were selected as regions of interest (ROIs) for the structural covariance analysis. Statistical analysis was performed using two-sample t-tests, and multiple regressions were applied to examine the relationships between neuroimaging findings and clinical symptoms.ResultsFunctional MRI results revealed significantly increased PerAF including the right hippocampus (HIPP) and right thalamus (THA) in patients with SCD relative to HCs. Gray matter volume (GMV) results demonstrated decreased GMV in the bilateral ventrolateral prefrontal cortex (vlPFC) and right insula in patients with SCD relative to HCs. Taking these three areas including the bilateral vlPFC and right insula as ROIs, differences were observed in the structural covariance of the ROIs with several regions between the two groups. Additionally, significant correlations were observed between neuroimaging findings and clinical symptoms.ConclusionOur study investigated the abnormal PerAF and structural covariance patterns in patients with SCD, which might provide new insights into the pathological mechanisms of SCD.

BackgroundMild Cognitive Impairment (MCI), as a high risk of Alzheimer’s disease (AD), represents a state of cognitive function between normal aging and dementia. Moxibustion may effectively delay the progression of AD, while there is a lack of studies on the treatments in MCI. This study aimed to evaluate the effect of moxibustion treatment revealed by the amplitude of low-frequency fluctuation (ALFF) in MCI.MethodWe enrolled 30 MCI patients and 30 matched healthy controls (HCs) in this study. We used ALFF to compare the difference between MCI and HCs at baseline and the regulation of spontaneous neural activity in MCI patients by moxibustion. The Mini-Mental State Examination and Montreal Cognitive Assessment scores were used to evaluate cognitive function.ResultsCompared with HCs, the ALFF values significantly decreased in the right temporal poles: middle temporal gyrus (TPOmid), right inferior temporal gyrus, left middle cingulate gyrus, and increased in the left hippocampus, left middle temporal gyrus, right lingual gyrus, and right middle occipital gyrus in MCI patients. After moxibustion treatment, the ALFF values notably increased in the left precuneus, left thalamus, right temporal poles: middle temporal gyrus, right middle frontal gyrus, right inferior temporal gyrus, right putamen, right hippocampus, and right fusiform gyrus, while decreased in the bilateral lingual gyrus in MCI patients. The Mini-Mental State Examination and Montreal Cognitive Assessment scores increased after moxibustion treatment, and the increase in Mini-Mental State Examination score was positively correlated with the increase of ALFF value in the right TPOmid, the right insula, and the left superior temporal gyrus.ConclusionMoxibustion treatment might improve the cognitive function of MCI patients by modulating the brain activities within the default mode network, visual network, and subcortical network with a trend of increased ALFF values and functional asymmetry of the hippocampus. These results indicate that moxibustion holds great potential in the treatment of MCI.

Suspended graphene film is of great significance for building high-performance electrical devices. However, fabricating large-area suspended graphene film with good mechanical properties is still a challenge, especially for the chemical vapor deposition (CVD)-grown graphene films. In this work, the mechanical properties of suspended CVD-grown graphene film are investigated systematically for the first time. It is found that monolayer graphene film is hard to maintain on circular holes with a diameter of tens of micrometers, which can be improved greatly by increasing the layer of graphene films. The mechanical properties of CVD-grown multilayer graphene films suspended on a circular hole with a diameter of 70 µm can be increased by 20%, and multilayer graphene films prepared by layer-layer stacking process can be increased by up to 400% for the same size. The corresponding mechanism was also discussed in detail, which might pave the way for building high-performance electrical devices based on high-strength suspended graphene film.

Abstract Background The brain’s dynamic spontaneous neural activity and dynamic functional connectivity (dFC) are both important in supporting cognition, but how these two types of brain dynamics evolve and co-evolve in subjective cognitive decline (SCD) and mild cognitive impairment (MCI) remain unclear. The aim of the present study was to investigate recurrent and concurrent patterns of two types of dynamic brain states correlated with cognitive decline. Methods The present study analyzed resting-state functional magnetic resonance imaging data from 62 SCD patients, 75 MCI patients, and 70 healthy controls (HCs). We used the sliding-window and clustering method to identify two types of recurrent brain states from both dFC and dynamic regional spontaneous activity, as measured by dynamic fractional amplitude of low-frequency fluctuations (dfALFF). Then, the occurrence frequency of a dFC or dfALFF state and the co-occurrence frequency of a pair of dFC and dfALFF states among all time points are extracted for each participant to describe their dynamics brain patterns. Results We identified a few recurrent states of dfALFF and dFC and further ascertained the co-occurrent patterns of these two types of dynamic brain states (i.e., dfALFF and dFC states). Importantly, the occurrence frequency of a default-mode network (DMN)-dominated dFC state was significantly different between HCs and SCD patients, and the co-occurrence frequencies of a DMN-dominated dFC state and a DMN-dominated dfALFF state were also significantly different between SCD and MCI patients. These two dynamic features were both significantly positively correlated with Mini-Mental State Examination scores. Conclusion Our findings revealed novel fMRI-based neural signatures of cognitive decline from recurrent and concurrent patterns of dfALFF and dFC, providing strong evidence supporting SCD as the transition phase between normal aging and MCI. This finding holds potential to differentiate SCD patients from HCs via both dFC and dfALFF as objective neuroimaging biomarkers, which may aid in the early diagnosis and intervention of Alzheimer’s disease.

ObjectiveTo develop and validate a radiomic nomogram for individualized prediction of hepatocellular carcinoma (HCC) in HBV cirrhosis patients based on baseline magnetic resonance imaging examinations and clinical data.Methods364 patients with HBV cirrhosis from five hospitals were assigned to the training, internal validation, external validation-1 or external validation-2 cohort. All patients underwent baseline magnetic resonance image (MRI) scans and clinical follow-up within three-year time. Clinical risk factors and MRI-based features were extracted and analyzed. The radiomic signatures were built using the radiomics-score (Rad-score) that calculated for each patient as a linear weighted combination of selected MRI-based features. Prognostic performances of the clinical and radiomic nomograms were evaluated with Cox modeling in the training and validation cohorts.ResultsEighteen features were selected for inclusion in the Rad-score prognostic model. The radiomic signature from multi-sequence MRI yielded a concordance index (C-index) of 0.710, 0.681, 0.632 and 0.658 in the training, internal validation, external validation-1, external validation-2 cohorts, respectively. Sex and Child-Turcotte-Pugh (CTP) class were the most prognostic clinical risk factors in univariate Cox proportional hazards analyses. The radiomic combined nomogram that integrated the radiomic signature with the clinical factors yielded a C-index of 0.746, 0.710, and 0.641 in the training, internal validation, and external validation-1 cohorts, respectively, which was an improvement over either the clinical nomogram or radiomic signature alone.ConclusionWe developed an MRI-based radiomic combined nomogram with good discrimination ability for the individualized prediction of HCC in HBV cirrhosis patients within three-year time.

Background: Previous multimodal neuroimaging studies analyzed each dataset independently in subjective cognitive decline (SCD) and mild cognitive impairment (MCI), missing the cross-information. Multi-modal fusion analysis can provide more integral and comprehensive information regarding the brain. There has been a paucity of research on fusion analysis of sMRI and DTI in SCD and MCI. Materials and Methods: In the present study, we conducted fusion analysis of structural MRI and DTI by applying multimodal canonical correlation analysis with joint independent component analysis (mCCA-jICA) to capture the cross-information of gray matter (GM) and white matter (WM) in 62 SCD patients, 99 MCI patients, and 70 healthy controls (HCs). We further analyzed correlations between the mixing coefficients of mCCA-jICA and neuropsychological scores among the three groups. Results: A set of joint-discriminative independent components of GM and fractional anisotropy (FA) exhibited significant links between SCD and HCs, as well as between MCI and HCs. The covariant abnormalities primarily involved the frontal lobe/middle temporal gyrus/calcarine sulcus-anterior thalamic radiation/superior longitudinal fasciculus in SCD, and middle temporal gyrus/ fusiform gyrus/caudate necleus-forceps minor/anterior thalamic radiation in MCI. There was no significant difference between SCD and MCI groups. Conclusions: The covariant GM-WM abnormalities in SCD and MCI were found in specific brain regions involved in cognitive processing, which confirms the simultaneous GM and WM changes underlying cognitive decline. These findings suggest that multimodal fusion analysis allows for a more comprehensive understanding of the association among different types of brain tissues and its crucial role in the neuropathological mechanism of SCD and MCI.

BackgroundRecently, subjective cognitive decline (SCD) has been described as the earliest at-risk state of Alzheimer’s disease (AD), and drawn attention of investigators. Studies suggested that SCD-community individuals may constitute a more vulnerable population than SCD-clinic patients, therefore, to investigate the early changes of the brain may provide guidance for treatment of the disease. We sought to investigate the changes of structure and functional connectivity alternation of the hippocampus in individuals with SCD recruited from the community using structural and resting-state functional MRI (fMRI).MethodsThirty-five SCD patients and 32 healthy controls were recruited. Resting-state fMRI data and high-resolution T1-weighted images were collected. Whole-brain voxel-based morphometry was used to examine the brain structural changes. We also used the hippocampal tail and the whole hippocampus as seeds to investigate functional connectivity alternation in SCD.ResultsIndividuals with SCD showed significant gray matter volume decreases in the bilateral hippocampal tails and enlargement of the bilateral paracentral lobules. We also found that individuals with SCD showed decreased hippocampal tail resting-state functional connectivity (rsFC) with the right medial prefrontal cortex (mPFC) and the left temporoparietal junction (TPJ), and decreased whole hippocampus rsFC with the bilateral mPFC and TPJ. These brain region and FC showing significant differences also showed significantly correlation with Montreal Cognitive Assessment (MoCA) scores.ConclusionIndividuals with SCD recruited from the community is associated with structural and functional changes of the hippocampus, and these changes may serve as potential biomarkers of SCD.Clinical Trial RegistrationThe Declaration of Helsinki, and the study was registered in http://www.chictr.org.cn. The Clinical Trial Registration Number was ChiCTR-IPR-16009144.

Metal-organic frameworks (MOFs) are considered to be the most promising positive anode materials to store charge for electrochromic devices. Nevertheless, a detailed mechanism of the electrochemical and ions storage process has not yet been revealed. Herein, the electrochemical mechanism of the highly porous ZIF-67 films and the electrochromic performance of electrochromic mirrors constructed from ZIF-67 and WO3 electrodes were investigated. The mechanism of the charge storage was revealed in the kinetic analysis of the Li-ion behavior based on the cyclic voltammetry curves and electrochemical impedance spectra. Impressively, the electrochromic mirrors with the self-bleaching effect and self-discharge behavior showed a unique electrochromic performance, such as a high coloration efficiency of 16.47 cm2 C−1 and a maximum reflectance modulation of 30.10% at 650 nm. This work provides a fundamental understanding of MOFs for applications in electrochromic devices and can also promote the exploration of novel electrode materials for high-performance reflective electrochromic devices.

It has been reported that in chalcogenide-based electrochemical metallization (ECM) memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S), the metal filament grows from the cathode (e.g., Pt and W) towards the anode (e.g., Cu and Ag), whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2). The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

In order to balance the stability and mobility of amorphous oxide semiconductor thin‐film transistors (AOS TFTs), we designate a stacked channel TFT structure incorporating an electron relaxation layer (CRL) and an electron transport layer (CTL). Rich In‐ITZO is chosen as the CTL, and a rich Ga‐IGZO material with a short photogenerated electron lifetime served as the CRL. Bilayer TFTs with CRL/CTL ratios of 5/20, 10/20, 15/20, 20/20, and 30/20 nm are prepared. The results reveal that the CRL/CTL stacked structure effectively enhances stability while maintaining high mobility. With an increase in CTL thickness, the TFT mobility also increases. Ultimately, three groups of devices with both high mobility and stability are fabricated: 10/20 TFT with a field‐effect mobility (μFE) of approximately 48.58 cm2V-1s-1 and a negative bias illumination stress (NBIS) threshold voltage shift (|ΔVth|) of around ‐1.14 V; 15/20 TFT with µFE~54.08 cm2V-1s-1 and NBIS |ΔVth|~ ‐2.35 V; and 20/20 TFT with µFE~65.98 cm2V-1s-1 and NBIS |ΔVth|~ ‐2.07 V. This suggests that the CRL/CTL structure can achieve high‐performance TFTs suitable for various display applications. [ABSTRACT FROM AUTHOR]