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3. Measuring sheet resistance of CIGS solar cell's window layer by spatially resolved electroluminescence imaging

Author

Paire, Myriam, Lombez, Laurent, Guillemoles, Jean Francois, and Lincot, Daniel

Subjects
Condensed Matter - Materials Science
Abstract

A spatially resolved electroluminescence (EL) imaging experiment is developed to measure the local sheet resistance of the window layer, directly on the completed CIGS cell. Our method can be applied to the EL imaging studies that are made in fundamental studies as well as in in-line process inspection (1-3). The EL experiment consists in using solar cell as a light emitting device : a voltage is applied to the cell and its luminescence is detected. We develop an analytical and quantitative model to simulate the behavior of CIGS solar cells based on the spread sheet resistance effect in the window layer. We determine the repartition of the electric potential on the ZnO, for given cell's characteristics such as sheet resistance and contact geometries. Knowing the repartition of the potential, the EL intensity is estimated and the experimental EL signal is fitted, which allows the determination of the window layer sheet resistance.

Published
2010
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5. Modelling competitive coadsorption in electrochemical growth processes

Author

Reis, Fabio D. A. Aarao, Badiali, J. P., Pauporte, Thierry, and Lincot, Daniel

Subjects
Physics - Chemical Physics, Condensed Matter - Materials Science, Condensed Matter - Statistical Mechanics, Physics - Computational Physics
Abstract

We present models of electrodeposition of ZnO films with organic additives, with focus on the growth of hybrid films with eosin Y. First we propose a rate equation model which assumes that the additives form branches with an exposed part above the ZnO deposit, growing with larger rate than the pure film, and that the rate of production of ZnO near those branches is proportional to the height exposed to the solution. This accounts for the production of OH- ions near the branches and the reactions with Zn++ ions. The steady state solution shows both species growing with the rate of the branches, and qualitatively explains their catalytic effect. Subsequently, we propose a more realistic statistical model for the formation of the hybrid deposits from Zn++ ions, a hydroxide precursor and eosin in solution. Simple probabilistic rules are used for reactions of eosin and oxygen, taking into account diffusion from solution along the same lines of the diffusion-limited aggregation models. The catalytic effect is represented by the preferencial production of OH- ions near eosin branches, which form ZnO species. An improvement of the growth rate is possible only with a rather large diffusion coefficient of eosin in solution compared to that of hydroxide precursors, in agreement with experimental findings. In the cases where a series of neighboring eosin clusters competitively grow, the increase in the growth rate and the high eosin loading observed in the simulated deposits also agree qualitatively with electrodeposition experiments., Comment: 23 pages, including 9 figures; 2nd version with many changes in the text, but the same results; accepted in Journal of Electroanalytical Chemistry

Published
2006

6. Investigation of co-evaporated polycrystalline Cu(In,Ga)S2 thin film yielding 16.0 % efficiency solar cell

Author

Barreau Nicolas, Bertin Eugène, Crossay Alexandre, Durand Olivier, Arzel Ludovic, Harel Sylvie, Lepetit Thomas, Assmann Lionel, Gautron Eric, and Lincot Daniel

Subjects
thin film solar cell, wide bandgap, sulfide, cigs, high efficiency, Renewable energy sources, TJ807-830
Abstract

The interest for pure sulfide Cu(In,Ga)S2 chalcopyrite thin films is increasing again because their optical properties make them relevant candidates to be applied as top cell absorbers in tandem structures. Nonetheless, their use as so is still hindered by the level of single-junction cells performance achieved so far, which are far below those demonstrated by selenide absorbers. Amongst the reasons at the origin of the limited efficiency of Cu(In,Ga)S2-based solar devices, one can mention the poor tolerance of S-chalcopyrite to Cu deficiency. In fact, Cu-poor Cu(In,Ga)S2 films contain CuIn5S8 thiospinel secondary phase which is harmful for device performance. In the present work, we investigate Cu(In,Ga)S2 thin films grown by a modified three-stage process making use of graded indium and gallium fluxes during the first stage. The resulting absorbers are single phase and made of large grains extended throughout the entire film thickness. We propose that such a morphology is a proof of the recrystallization of the entire film during the synthesis. Devices prepared from those films and buffered with bath deposited CdS demonstrate outstanding efficiency of 16.0%. Replacing CdS by Zn(O,S) buffer layer leads to increased open circuit voltage and short circuit current; however, performance become limited by lowered fill factor.

Published
2022
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17. Elaboration of wide bandgap CIGS on silicon by electrodeposition of stacked metal precursors and sulfur annealing for tandem solar cell applications

Author

Crossay Alexandre, Cammilleri Davide, Thomere Angelica, Zerbo Bienlo, Rebai Amelle, Barreau Nicolas, and Lincot Daniel

Subjects
tandem solar cells, pure sulfide cigs, silicon, electrodeposition, silver-sulfide, Renewable energy sources, TJ807-830
Abstract

A method was developed for the electrodeposition of Cu-In-Ga precursor layers to elaborate Cu(In,Ga)(S,Se)2 (CIGS) thin films on silicon substrates for future application as silicon/wide-gap CIGS tandem solar cells. An underlayer of Ag was first deposited on silicon substrates to ensure a good adhesion of the electrodeposited stack and to serve as cathode during the deposition process. Cu, In and Ga layers were then sequentially electrodeposited. Ag-Cu-In-Ga precursor layers were finally subjected to elemental sulfur annealing at 600 °C. Formation of compact and adherent AgCIGS is observed. X ray diffraction and photoluminescence analyses confirm the formation of wide-gap CIGS of about 1.6 eV, with a spontaneous gallium grading over the depth of the sample leading to the formation of a bi-layer structure with a gallium rich layer at the interface with silicon.

Published
2020
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19. Epitaxial growth of Cu(In,Ga)S2 thin films on GaP/Si(001) pseudo-substrate: towards Cu(In,Ga)S2/Si tandem solar cells

Author

Bertin, Eugène, Cornet, Charles, Choubrac, Léo, Jullien, Maud, Létoublon, Antoine, Crossay, Alexandre, Gautron, Eric, Harel, Sylvie, Arzel, Ludovic, Lincot, Daniel, Durand, Olivier, Barreau, Nicolas, Institut des Matériaux Jean Rouxel (IMN), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), RENATECH-NanoRennes, and ANR-20-CE05-0038,EPCIS,Cellules Tandem Epitaxiales à Haut Rendement CIGS-Silicium(2020)

Subjects
[SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2022

20. ANR EPCIS: first results on High-Efficiency Epitaxial CIGSu on Silicon Tandem Solar Cell

Author

Durand, Olivier, Bertin, Eugène, Barreau, Nicolas, Jullien, Maud, Gautheron-Bernard, Rozenn, Létoublon, Antoine, Gautron, Eric, Arzel, Ludovic, Harel, Sylvie, Crossay, Alexandre, Lontchi, Jackson, Rebaï, Amelle, Bérenguier, Baptiste, Guillemoles, Jean-François, Naghavi, Negar, Fave, Alain, Tamin, Charif, Lincot, Daniel, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), PIA (Grant no. ANR‐IEED‐002‐01), French Contrat Plan État‐Région and the European Regional Development Fund of Pays de la Loire. The authors acknowledge RENATECH+ (French Network of MajorTechnology Centers) for technological support, and the CIMEN Electron Microscopy Center in Nantes., and ANR-20-CE05-0038,EPCIS,Cellules Tandem Epitaxiales à Haut Rendement CIGS-Silicium(2020)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2022

21. Énergie solaire photovoltaïque et transition énergétique

Author

Lincot, Daniel

Subjects
RN, PHDY, électricité, Multidisciplinary, PN, transition énergétique, conversion photovoltaïque, Environmental Studies, énergie photovoltaïque, Anthropocène, Soleil, SCI013080, énergie solaire, photovoltaïque, SCI024000, transition écologique, SCI026000, Héliocène, énergie, chimie
Abstract

Monsieur l’Administrateur,Monsieur le Président du CNRS,Monsieur le Directeur général de la fondation Liliane Bettencourt Schueller,Chers collègues et amis,Mesdames, Messieurs, Je vous remercie, Monsieur l’Administrateur, pour votre introduction, qui m’a particulièrement touché. Vous avez rappelé les liens profonds qui unissent l’humanité au soleil et à son énergie, tout au long de l’histoire et des civilisations. Ils prennent une dimension inédite aujourd’hui avec le développement à grande é...

Published
2022

25. Transparent Porous ZnO|Metal Complex Nanostructured Materials: Application to Electrocatalytic CO2 Reduction.

Author

Guerrero, Julian, Schneider, Nathanaelle, Dumoulin, Fabienne, Lincot, Daniel, Isci, Umit, Naghavi, Negar, and Robert, Marc

Abstract

We developed a simple and versatile approach for the electrochemical growth of hybrid ZnO|molecular catalyst nanostructured layers. Metal oxide|catalyst hybrid nanoporous layers with a sponge-like structure at the nanoscale and multiscale three-dimensional (3D) hierarchical structures based on nanoporous zinc oxide (ZnO) layers grown on ZnO nanorods were obtained. The thickness and structure of the hybrid nanoporous layers as well as the catalyst concentration can be tuned. This method allows the introduction of water-soluble molecular catalysts based on porphyrin and/or phthalocyanine derivatives into the ZnO matrix with a homogeneous distribution of the complex into the material. As an illustrative example, combining hybrid ZnO with a very low concentration of an encapsulated Co-based molecular catalyst inside the oxide layer results in a 97% catalytic response toward CO2 reduction to CO with large currents in an organic solvent, highlighting the excellent electrocatalytic activities of such layers, which combine porosity, electronic conductivity, and synergetic properties from its components. [ABSTRACT FROM AUTHOR]

Published
2023
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27. Towards high-efficiency and low-cost epitaxial CIGSu/Si tandem solar cells

Author

Durand, Olivier, Bertin, Eugène, Barreau, Nicolas, Gautron, Eric, Létoublon, Antoine, Cornet, Charles, Jullien, Maud, Crossay, Alexandre, Tsoulka, Polyxeni, Lincot, Daniel, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Institut des Matériaux Jean Rouxel (IMN), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), RENATECH, and ANR-20-CE05-0038,EPCIS,Cellules Tandem Epitaxiales à Haut Rendement CIGS-Silicium(2020)

Subjects
Solar cells, Silicon, Gallium arsenide, Germanium, Copper indium gallium selenide, Deposition processes, Tandem solar cells, Electron microscopy, Multijunction solar cells, Crystals, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

We propose to explore tandem junctions associating single crystalline silicon bottom cell (Eg = 1.12 eV) and wide bandgap (1.7 eV) CuIn0.75Ga0.25S2 (pure-sulfide CIGSu) top cell, using GaP intermediate layer. Our purpose is to grow CIGSu films under epitaxial conditions on GaP/Si(001) to improve the top cell efficiency, thanks to a reduction of the structural defects density detrimental for the cell performance, so that CIGSu/Si tandem cells can emerge as cost competitive for the next generation of PV modules. Record efficiency on standard AZO/ZnMgO/CdS/CIGSu/Mo/Glass solar cell and epitaxy of CIGSsu on GaP/Si are demonstrated.

Published
2022

30. Semi-transparent photovoltaic glazing based on electrodeposited CIGS solar cells on patterned molybdenum/glass substrates

Author

Sidali Tarik, Bou Adrien, Coutancier Damien, Chassaing Elisabeth, Theys Bertrand, Barakel Damien, Garuz Richard, Thoulon Pierre-Yves, and Lincot Daniel

Subjects
PV glass, BIPV, CIGS thin films, semi-transparent solar cell, electrodeposition, see-through solar cell, submillimetric pattern, bottom-up solar cell, Renewable energy sources, TJ807-830
Abstract

In this paper, a new way of preparing semi-transparent solar cells using Cu(In1−xGax)Se2 (CIGS) chalcopyrite semiconductors as absorbers for BIPV applications is presented. The key to the elaboration process consists in the co-electrodeposition of Cu-In-Ga mixed oxides on submillimetric hole-patterned molybdenum substrate, followed by thermal reduction to metallic alloys and selenisation. This method has the advantage of being a selective deposition technique where the thin film growth is carried out only on Mo covered areas. Thus, after annealing, the transparency of the sample is always preserved, allowing light to pass through the device. A complete device (5 × 5 cm2) with 535 μm diameter holes and total glass aperture of around 35% shows an open circuit voltage (VOC) of 400 mV. Locally, the I-V curves reveal a maximum efficiency of 7.7%, VOC of 460 mV, JSC of 24 mA.cm−2 in an area of 0.1 cm2 with 35% aperture. This efficiency on the semi-transparent area is equivalent to a record efficiency of 11.9% by taking into account only the effective area.

Published
2018
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32. Comment on Seibert, M.K.; Rees, W.E. Through the Eye of a Needle: An Eco-Heterodox Perspective on the Renewable Energy Transition. Energies 2021, 14, 4508

Author

Fthenakis, Vasilis, primary, Raugei, Marco, additional, Breyer, Christian, additional, Bhattacharya, Suby, additional, Carbajales-Dale, Michael, additional, Ginsberg, Michael, additional, Jäger-Waldau, Arnulf, additional, Leccisi, Enrica, additional, Lincot, Daniel, additional, Murphy, David, additional, Perez, Marc J. R., additional, Sinha, Parikhit, additional, Rockett, Angus, additional, Sadewasser, Sascha, additional, Stanbery, Billy J., additional, Swanson, Richard M., additional, and Verlinden, Pierre, additional

Published
2022
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34. Towards a better understanding of experimental High Frequency Modulated Photoluminescence Curves: Numerical Calculation and Analytical approach

Author

Bérenguier, Baptiste, Moron, Nicolas, Asseko, Alban, Ayache, Armelle, Rousset, Jean, Hajhemati, J., Dufoulon, Vincent, Bapaume, Claire Darin, Schulz, Philip, Lontchi, Jackson, Lincot, Daniel, Alvarez, J, Kleider, Jean-Paul, Guillemoles, Jean-François, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), EDF R&D (EDF R&D), EDF (EDF), and KLEIDER, Jean-Paul

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

37. CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cells

Author

Durand, Olivier, Létoublon, Antoine, Cornet, C., Rolland, Alain, Zhou, Ang, Boyer-Richard, S., Fan, Fei, Barreau, Nicolas, Gautron, Eric, Balestrieri, Matteo, Coutancier, Damien, Lincot, Daniel, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), ANR-20-CE05-0038,EPCIS,Cellules Tandem Epitaxiales à Haut Rendement CIGS-Silicium(2020), Université de Nantes, CNRS, Institut des Matériaux Jean Rouxel, IMN, F-44000 Nantes, France, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2021

40. CIGS growth on a GaP/Si(001) platform : towards CIGS/Si tandem solar cells

Author

Durand, Olivier, Létoublon, Antoine, Cornet, Charles, Zhou, Ang, Barreau, Nicolas, Gautron, Eric, Balestrieri, Matteo, Coutancier, Damien, Lincot, Daniel, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

46. Mechanistic study of chemical deposition of ZnS thin films from aqueous solutions containing zinc acetate and thioacetamide by comparison with homogeneous precipitation

Author

Yamaguchi, Koichi, Yoshida, Tsukasa, Lincot, Daniel, and Minoura, Hideki

Subjects
Sulfides -- Chemical properties, Zinc compounds -- Chemical properties, Dielectric films -- Research, Thin films -- Research, Chemicals, plastics and rubber industries
Abstract

General laws for the precipitation of ZnS in aqueous mixture of zinc acetate and thioacetamide aqueous solutions is established and succeeded for the first time in establishing a correlation with the growth of films by the so-called chemical bath deposition method. It is showed that the building units both for the film and the precipitate are nanocrystallites formed in the solution.

Published
2003

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